FR2588277B1 - METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE - Google Patents

METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE

Info

Publication number
FR2588277B1
FR2588277B1 FR8613803A FR8613803A FR2588277B1 FR 2588277 B1 FR2588277 B1 FR 2588277B1 FR 8613803 A FR8613803 A FR 8613803A FR 8613803 A FR8613803 A FR 8613803A FR 2588277 B1 FR2588277 B1 FR 2588277B1
Authority
FR
France
Prior art keywords
depositing
tungsten layer
dielectric surface
dielectric
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8613803A
Other languages
French (fr)
Other versions
FR2588277A1 (en
Inventor
David Winfield Woodruff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2588277A1 publication Critical patent/FR2588277A1/en
Application granted granted Critical
Publication of FR2588277B1 publication Critical patent/FR2588277B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
FR8613803A 1985-10-07 1986-10-03 METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE Expired - Fee Related FR2588277B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78498585A 1985-10-07 1985-10-07

Publications (2)

Publication Number Publication Date
FR2588277A1 FR2588277A1 (en) 1987-04-10
FR2588277B1 true FR2588277B1 (en) 1991-08-16

Family

ID=25134142

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8613803A Expired - Fee Related FR2588277B1 (en) 1985-10-07 1986-10-03 METHOD FOR DEPOSITING A TUNGSTEN LAYER ON A DIELECTRIC SURFACE

Country Status (4)

Country Link
JP (1) JPS62109973A (en)
DE (1) DE3631758A1 (en)
FR (1) FR2588277B1 (en)
GB (1) GB2181456B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0267730B1 (en) * 1986-11-10 1992-03-18 AT&T Corp. Tungsten metallization
DE3730644A1 (en) * 1987-09-11 1989-03-30 Baeuerle Dieter METHOD FOR THE PRESENTED STRUCTURED DEPOSITION OF MICROSTRUCTURES WITH LASER LIGHT
FR2621738B1 (en) * 1987-10-08 1990-02-02 Mingam Herve INSULATED METAL GRID FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD
US4873152A (en) * 1988-02-17 1989-10-10 Air Products And Chemicals, Inc. Heat treated chemically vapor deposited products
US5149672A (en) * 1988-08-01 1992-09-22 Nadia Lifshitz Process for fabricating integrated circuits having shallow junctions
US4999317A (en) * 1989-09-29 1991-03-12 At&T Bell Laboratories Metallization processing
US5084415A (en) * 1989-10-23 1992-01-28 At&T Bell Laboratories Metallization processing
KR940010158B1 (en) * 1991-07-09 1994-10-22 한국과학기술연구원 Tungsten film depositing method using pecvd
JP3491237B2 (en) * 1993-09-24 2004-01-26 日本テキサス・インスツルメンツ株式会社 Stacked conductive film structure of semiconductor device
US20090115060A1 (en) 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
CN110983249A (en) * 2019-12-25 2020-04-10 中建材蚌埠玻璃工业设计研究院有限公司 Preparation method of large-area continuous layered molybdenum sulfide

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR793015A (en) * 1934-10-16 1936-01-15 Dispersion Cathodique S A Improvements in cathodic dispersion
US2387903A (en) * 1944-03-14 1945-10-30 Mallory & Co Inc P R Contacting element
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
DE2151127C3 (en) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Process for depositing a metallization pattern and its application
US3856647A (en) * 1973-05-15 1974-12-24 Ibm Multi-layer control or stress in thin films
US4234622A (en) * 1979-04-11 1980-11-18 The United States Of American As Represented By The Secretary Of The Army Vacuum deposition method
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4404234A (en) * 1981-12-23 1983-09-13 Bell Telephone Laboratories, Incorporated Electrode coating process

Also Published As

Publication number Publication date
GB2181456B (en) 1989-10-25
FR2588277A1 (en) 1987-04-10
JPS62109973A (en) 1987-05-21
DE3631758C2 (en) 1988-05-19
GB2181456A (en) 1987-04-23
GB8622272D0 (en) 1986-10-22
DE3631758A1 (en) 1987-04-09
JPS6248752B2 (en) 1987-10-15

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