FR2581481B1 - MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF - Google Patents

MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF

Info

Publication number
FR2581481B1
FR2581481B1 FR8506754A FR8506754A FR2581481B1 FR 2581481 B1 FR2581481 B1 FR 2581481B1 FR 8506754 A FR8506754 A FR 8506754A FR 8506754 A FR8506754 A FR 8506754A FR 2581481 B1 FR2581481 B1 FR 2581481B1
Authority
FR
France
Prior art keywords
manufacturing
microwave transistor
microwave
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8506754A
Other languages
French (fr)
Other versions
FR2581481A1 (en
Inventor
Bernard Fumee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8506754A priority Critical patent/FR2581481B1/en
Publication of FR2581481A1 publication Critical patent/FR2581481A1/en
Application granted granted Critical
Publication of FR2581481B1 publication Critical patent/FR2581481B1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • H01L29/66295Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • H01L29/0813Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR8506754A 1985-05-03 1985-05-03 MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF Expired FR2581481B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8506754A FR2581481B1 (en) 1985-05-03 1985-05-03 MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8506754A FR2581481B1 (en) 1985-05-03 1985-05-03 MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF

Publications (2)

Publication Number Publication Date
FR2581481A1 FR2581481A1 (en) 1986-11-07
FR2581481B1 true FR2581481B1 (en) 1988-04-29

Family

ID=9318933

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8506754A Expired FR2581481B1 (en) 1985-05-03 1985-05-03 MICROWAVE TRANSISTOR AND MANUFACTURING METHOD THEREOF

Country Status (1)

Country Link
FR (1) FR2581481B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492844A (en) * 1993-01-29 1996-02-20 Sgs-Thomson Microelectronics, Inc. Method of manufacturing increased conductivity base contact/feeders with self-aligned structures
FR2832548B1 (en) * 2001-11-16 2004-01-02 United Monolithic Semiconduct POWER HYPERFREQUENCY TRANSISTOR

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601666A (en) * 1969-08-21 1971-08-24 Texas Instruments Inc Titanium tungsten-gold contacts for semiconductor devices
FR2206585B1 (en) * 1972-11-13 1977-07-22 Radiotechnique Compelec
US4488349A (en) * 1982-04-09 1984-12-18 Nissan Motor Company, Limited Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization
FR2545654B1 (en) * 1983-05-03 1985-09-13 Fairchild Camera Instr Co POWER SEMICONDUCTOR COMPONENT, AND METHOD FOR THE PRODUCTION THEREOF
DE3329241A1 (en) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München POWER TRANSISTOR

Also Published As

Publication number Publication date
FR2581481A1 (en) 1986-11-07

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Legal Events

Date Code Title Description
ST Notification of lapse