FR2569056B1 - Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor - Google Patents
Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistorInfo
- Publication number
- FR2569056B1 FR2569056B1 FR858512117A FR8512117A FR2569056B1 FR 2569056 B1 FR2569056 B1 FR 2569056B1 FR 858512117 A FR858512117 A FR 858512117A FR 8512117 A FR8512117 A FR 8512117A FR 2569056 B1 FR2569056 B1 FR 2569056B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- integrated circuit
- injection type
- static induction
- type static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 title 1
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59164824A JPH0620143B2 (ja) | 1984-08-08 | 1984-08-08 | トンネル注入型静電誘導トランジスタ |
JP59180447A JPH0614535B2 (ja) | 1984-08-31 | 1984-08-31 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2569056A1 FR2569056A1 (fr) | 1986-02-14 |
FR2569056B1 true FR2569056B1 (fr) | 1989-03-10 |
Family
ID=26489778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR858512117A Expired FR2569056B1 (fr) | 1984-08-08 | 1985-08-07 | Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4870469A (fr) |
DE (1) | DE3528562A1 (fr) |
FR (1) | FR2569056B1 (fr) |
GB (2) | GB2163002B (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4712122A (en) * | 1984-07-26 | 1987-12-08 | Research Development Corp. | Heterojunction gate ballistic JFET with channel thinner than Debye length |
JPH0642555B2 (ja) * | 1989-06-20 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
EP0452910B1 (fr) * | 1990-04-18 | 1997-03-26 | Fujitsu Limited | Dispositif semi-conducteur avec une structure d'accélération des porteurs |
JPH1041579A (ja) * | 1996-05-21 | 1998-02-13 | Toshiba Corp | 半導体装置とその製造方法 |
DE69936175T2 (de) * | 1998-11-04 | 2008-01-24 | Lucent Technologies Inc. | Induktivität oder Leiterbahn mit geringem Verlust in einer integrierten Schaltung |
DE102005023361A1 (de) * | 2005-05-20 | 2006-11-23 | Robert Bosch Gmbh | Feldeffekttransistor |
US8476709B2 (en) * | 2006-08-24 | 2013-07-02 | Infineon Technologies Ag | ESD protection device and method |
US8178400B2 (en) * | 2009-09-28 | 2012-05-15 | International Business Machines Corporation | Replacement spacer for tunnel FETs |
US8258031B2 (en) | 2010-06-15 | 2012-09-04 | International Business Machines Corporation | Fabrication of a vertical heterojunction tunnel-FET |
US9146059B2 (en) | 2012-05-16 | 2015-09-29 | The United States Of America, As Represented By The Secretary Of The Navy | Temperature actuated capillary valve for loop heat pipe system |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3171042A (en) * | 1961-09-08 | 1965-02-23 | Bendix Corp | Device with combination of unipolar means and tunnel diode means |
US3462700A (en) * | 1966-08-10 | 1969-08-19 | Bell Telephone Labor Inc | Semiconductor amplifier using field effect modulation of tunneling |
USRE29971E (en) * | 1971-07-31 | 1979-04-17 | Zaidan Hojin Hondotai Kenkyn Shinkokai | Field effect semiconductor device having an unsaturated triode vacuum tube characteristic |
US4075652A (en) * | 1974-04-17 | 1978-02-21 | Matsushita Electronics Corporation | Junction gate type gaas field-effect transistor and method of forming |
JPS5396842A (en) * | 1977-02-03 | 1978-08-24 | Ricoh Co Ltd | Actuator of sheet gripper in sheet conveying device |
JPS53121581A (en) * | 1977-03-31 | 1978-10-24 | Seiko Instr & Electronics Ltd | Logical element of electrostatic inductive transistor |
US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
US4160261A (en) * | 1978-01-13 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Mis heterojunction structures |
JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
US4379005A (en) * | 1979-10-26 | 1983-04-05 | International Business Machines Corporation | Semiconductor device fabrication |
JPS5664430A (en) * | 1979-10-30 | 1981-06-01 | Semiconductor Res Found | Multiple hetero junction and manufacture thereof |
GB2069754B (en) * | 1980-02-14 | 1984-01-04 | Itt Ind Ltd | Field effect transistor |
JPS56124273A (en) * | 1980-03-04 | 1981-09-29 | Semiconductor Res Found | Semiconductor device |
IT1138998B (it) * | 1980-03-17 | 1986-09-17 | Gte Laboratories Inc | Transistor a induzione statica con strutture di porta perfezionate |
US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
JPS57186374A (en) * | 1981-05-12 | 1982-11-16 | Semiconductor Res Found | Tunnel injection type travelling time effect semiconductor device |
JPS5882570A (ja) * | 1981-11-11 | 1983-05-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
JPS58188167A (ja) * | 1982-04-28 | 1983-11-02 | Agency Of Ind Science & Technol | 半導体デバイス |
US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
US4583105A (en) * | 1982-12-30 | 1986-04-15 | International Business Machines Corporation | Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
US4639753A (en) * | 1984-04-19 | 1987-01-27 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US4712122A (en) * | 1984-07-26 | 1987-12-08 | Research Development Corp. | Heterojunction gate ballistic JFET with channel thinner than Debye length |
JP3058505B2 (ja) * | 1992-02-27 | 2000-07-04 | 東京瓦斯株式会社 | 13c標識化合物の製造方法 |
-
1985
- 1985-08-07 FR FR858512117A patent/FR2569056B1/fr not_active Expired
- 1985-08-07 GB GB08519851A patent/GB2163002B/en not_active Expired
- 1985-08-08 DE DE19853528562 patent/DE3528562A1/de active Granted
-
1987
- 1987-10-01 GB GB08723051A patent/GB2194677B/en not_active Expired
-
1988
- 1988-01-25 US US07/147,656 patent/US4870469A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8723051D0 (en) | 1987-11-04 |
GB2194677B (en) | 1989-01-05 |
DE3528562C2 (fr) | 1993-02-04 |
GB2163002A (en) | 1986-02-12 |
GB8519851D0 (en) | 1985-09-11 |
FR2569056A1 (fr) | 1986-02-14 |
GB2163002B (en) | 1989-01-05 |
US4870469A (en) | 1989-09-26 |
DE3528562A1 (de) | 1986-02-13 |
GB2194677A (en) | 1988-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |