FR2559959B1 - MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME - Google Patents
MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAMEInfo
- Publication number
- FR2559959B1 FR2559959B1 FR8402569A FR8402569A FR2559959B1 FR 2559959 B1 FR2559959 B1 FR 2559959B1 FR 8402569 A FR8402569 A FR 8402569A FR 8402569 A FR8402569 A FR 8402569A FR 2559959 B1 FR2559959 B1 FR 2559959B1
- Authority
- FR
- France
- Prior art keywords
- beams
- producing
- same
- external connections
- microwave diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8402569A FR2559959B1 (en) | 1984-02-21 | 1984-02-21 | MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8402569A FR2559959B1 (en) | 1984-02-21 | 1984-02-21 | MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2559959A1 FR2559959A1 (en) | 1985-08-23 |
FR2559959B1 true FR2559959B1 (en) | 1987-05-22 |
Family
ID=9301202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8402569A Expired FR2559959B1 (en) | 1984-02-21 | 1984-02-21 | MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2559959B1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63503103A (en) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | Multi-junction semiconductor device |
JPH0642555B2 (en) * | 1989-06-20 | 1994-06-01 | 株式会社東芝 | Semiconductor device |
FR2829616B1 (en) | 2001-09-10 | 2004-03-12 | St Microelectronics Sa | VERTICAL LOW CAPACITY DIODE |
DE10160829A1 (en) * | 2001-12-11 | 2003-06-26 | Infineon Technologies Ag | Diode circuit and method of manufacturing a diode circuit |
IT1403137B1 (en) * | 2010-06-28 | 2013-10-04 | Selex Sistemi Integrati Spa | METHOD OF MANUFACTURE OF VERTICAL PIN DIODES |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180422A (en) * | 1969-02-03 | 1979-12-25 | Raytheon Company | Method of making semiconductor diodes |
US4097890A (en) * | 1976-06-23 | 1978-06-27 | Hewlett-Packard Company | Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture |
GB2028583B (en) * | 1978-08-02 | 1983-01-06 | Aei Semiconductors Ltd | Electrical lead for a semiconductor device |
FR2520931B1 (en) * | 1982-02-02 | 1986-12-12 | Thomson Csf | COLLECTIVE PROCESS FOR MANUFACTURING MICROWAVE DIODES WITH BUILT-IN ENCAPSULATION AND DIODES OBTAINED THEREBY |
FR2538616B1 (en) * | 1982-12-28 | 1986-01-24 | Thomson Csf | METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED |
-
1984
- 1984-02-21 FR FR8402569A patent/FR2559959B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2559959A1 (en) | 1985-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |