FR2559959B1 - MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME - Google Patents

MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME

Info

Publication number
FR2559959B1
FR2559959B1 FR8402569A FR8402569A FR2559959B1 FR 2559959 B1 FR2559959 B1 FR 2559959B1 FR 8402569 A FR8402569 A FR 8402569A FR 8402569 A FR8402569 A FR 8402569A FR 2559959 B1 FR2559959 B1 FR 2559959B1
Authority
FR
France
Prior art keywords
beams
producing
same
external connections
microwave diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8402569A
Other languages
French (fr)
Other versions
FR2559959A1 (en
Inventor
Raymond Henry
Ronald Funck
Bertrand Le Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8402569A priority Critical patent/FR2559959B1/en
Publication of FR2559959A1 publication Critical patent/FR2559959A1/en
Application granted granted Critical
Publication of FR2559959B1 publication Critical patent/FR2559959B1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8402569A 1984-02-21 1984-02-21 MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME Expired FR2559959B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8402569A FR2559959B1 (en) 1984-02-21 1984-02-21 MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8402569A FR2559959B1 (en) 1984-02-21 1984-02-21 MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME

Publications (2)

Publication Number Publication Date
FR2559959A1 FR2559959A1 (en) 1985-08-23
FR2559959B1 true FR2559959B1 (en) 1987-05-22

Family

ID=9301202

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8402569A Expired FR2559959B1 (en) 1984-02-21 1984-02-21 MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME

Country Status (1)

Country Link
FR (1) FR2559959B1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63503103A (en) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 Multi-junction semiconductor device
JPH0642555B2 (en) * 1989-06-20 1994-06-01 株式会社東芝 Semiconductor device
FR2829616B1 (en) 2001-09-10 2004-03-12 St Microelectronics Sa VERTICAL LOW CAPACITY DIODE
DE10160829A1 (en) * 2001-12-11 2003-06-26 Infineon Technologies Ag Diode circuit and method of manufacturing a diode circuit
IT1403137B1 (en) * 2010-06-28 2013-10-04 Selex Sistemi Integrati Spa METHOD OF MANUFACTURE OF VERTICAL PIN DIODES

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
GB2028583B (en) * 1978-08-02 1983-01-06 Aei Semiconductors Ltd Electrical lead for a semiconductor device
FR2520931B1 (en) * 1982-02-02 1986-12-12 Thomson Csf COLLECTIVE PROCESS FOR MANUFACTURING MICROWAVE DIODES WITH BUILT-IN ENCAPSULATION AND DIODES OBTAINED THEREBY
FR2538616B1 (en) * 1982-12-28 1986-01-24 Thomson Csf METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED

Also Published As

Publication number Publication date
FR2559959A1 (en) 1985-08-23

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Legal Events

Date Code Title Description
ST Notification of lapse