FR2555811B1 - Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede - Google Patents

Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede

Info

Publication number
FR2555811B1
FR2555811B1 FR8319109A FR8319109A FR2555811B1 FR 2555811 B1 FR2555811 B1 FR 2555811B1 FR 8319109 A FR8319109 A FR 8319109A FR 8319109 A FR8319109 A FR 8319109A FR 2555811 B1 FR2555811 B1 FR 2555811B1
Authority
FR
France
Prior art keywords
diodes
light emitting
spectral width
producing low
low spectral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8319109A
Other languages
English (en)
Other versions
FR2555811A1 (fr
Inventor
Jacques Varon
Marie-Josephe Martin
Marc Mahieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8319109A priority Critical patent/FR2555811B1/fr
Priority to DE19843441709 priority patent/DE3441709A1/de
Priority to GB08429800A priority patent/GB2150752B/en
Priority to NLAANVRAGE8403594,A priority patent/NL188487C/xx
Priority to SE8405980A priority patent/SE460003B/sv
Priority to JP59248834A priority patent/JPS60134487A/ja
Priority to US06/675,483 priority patent/US4646116A/en
Publication of FR2555811A1 publication Critical patent/FR2555811A1/fr
Application granted granted Critical
Publication of FR2555811B1 publication Critical patent/FR2555811B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR8319109A 1983-11-30 1983-11-30 Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede Expired FR2555811B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR8319109A FR2555811B1 (fr) 1983-11-30 1983-11-30 Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede
DE19843441709 DE3441709A1 (de) 1983-11-30 1984-11-15 Halbleiteranordnung mit einer elektrolumineszierenden diode und verfahren zum herstellen derselben
GB08429800A GB2150752B (en) 1983-11-30 1984-11-26 Electroluminescent diode and method of manufacturing same
NLAANVRAGE8403594,A NL188487C (nl) 1983-11-30 1984-11-27 Halfgeleiderinrichting met een electroluminescerende diode en werkwijze ter vervaardiging daarvan.
SE8405980A SE460003B (sv) 1983-11-30 1984-11-27 Elektroluminiscent diod med ett smalt spektralomraade och foerfarande foer dess framstaellning
JP59248834A JPS60134487A (ja) 1983-11-30 1984-11-27 半導体装置およびその製造方法
US06/675,483 US4646116A (en) 1983-11-30 1984-11-28 Semiconductor device having an electroluminescent diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8319109A FR2555811B1 (fr) 1983-11-30 1983-11-30 Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede

Publications (2)

Publication Number Publication Date
FR2555811A1 FR2555811A1 (fr) 1985-05-31
FR2555811B1 true FR2555811B1 (fr) 1986-09-05

Family

ID=9294685

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8319109A Expired FR2555811B1 (fr) 1983-11-30 1983-11-30 Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede

Country Status (7)

Country Link
US (1) US4646116A (fr)
JP (1) JPS60134487A (fr)
DE (1) DE3441709A1 (fr)
FR (1) FR2555811B1 (fr)
GB (1) GB2150752B (fr)
NL (1) NL188487C (fr)
SE (1) SE460003B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04258182A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 半導体発光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037995B1 (fr) * 1969-05-28 1975-12-06
FR2175571B1 (fr) * 1972-03-14 1978-08-25 Radiotechnique Compelec
FR2219545B1 (fr) * 1973-02-26 1976-12-03 Matsushita Electronics Corp
US3962716A (en) * 1973-11-12 1976-06-08 Bell Telephone Laboratories, Incorporated Reduction of dislocations in multilayer structures of zinc-blend materials
FR2315173A1 (fr) * 1975-06-19 1977-01-14 Akimov Jury Procede de preparation de matrice a semi-conducteurs a elements luminescents
DE2752107A1 (de) * 1976-11-22 1978-06-01 Mitsubishi Monsanto Chem Elektrolumineszenzelement und verfahren zu seiner herstellung
JPS55132034A (en) * 1979-03-31 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor thin film
JPS55132036A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Adding method for impurity to semiconductor
US4354140A (en) * 1979-05-28 1982-10-12 Zaidan Hojin Handotai Kenkyu Shinkokai Light-emitting semiconductor
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
CA1165851A (fr) * 1980-06-16 1984-04-17 Subhash Mahajan Dispositifs epitaxiaux a nombre de dislocations reduit
CA1208752A (fr) * 1981-09-30 1986-07-29 Michael Ettenberg Corps semiconducteur pour l'assise d'un dispositif electroluminescent a longue duree utile

Also Published As

Publication number Publication date
SE8405980L (sv) 1985-05-31
SE8405980D0 (sv) 1984-11-27
GB2150752A (en) 1985-07-03
GB8429800D0 (en) 1985-01-03
DE3441709A1 (de) 1985-06-05
NL188487B (nl) 1992-02-03
NL8403594A (nl) 1985-06-17
GB2150752B (en) 1987-11-25
JPS60134487A (ja) 1985-07-17
US4646116A (en) 1987-02-24
FR2555811A1 (fr) 1985-05-31
SE460003B (sv) 1989-08-28
JPH0577194B2 (fr) 1993-10-26
NL188487C (nl) 1992-07-01

Similar Documents

Publication Publication Date Title
ITMI912847A1 (it) Metodo per la guida della luce
KR880701696A (ko) 요오드화 방향족 화합물의 제조방법
FR2671801B1 (fr) Procede de production de glycomacropeptides de kappa-caseine.
FR2601486B1 (fr) Procede de fabrication d&#39;une plaque eclairante a diodes electroluminescentes et feu de signalisation obtenu par ce procede
FR2671238B1 (fr) Procede de realisation de lasers semiconducteurs a emission de surface, et lasers obtenus par le procede.
DE3678313D1 (de) Vorrichtung zum herstellen einer profilierten vorform.
FR2638594B1 (fr) Procede de realisation d&#39;un circuit electrique de puissance monocouche ou multicouches, et circuit obtenu par ce procede
FR2555811B1 (fr) Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede
DK368385A (da) Persiennefremstillingsmaskine
FR2562339B1 (fr) Procede de realisation d&#39;un miroir de laser a semi-conducteur, par usinage ionique
DE68906560D1 (de) Verfahren zum herstellen von integral mit schaufeln versehenen laeufern.
MA20047A1 (fr) Procede de production de cuivre ampoule.
FR2653788B1 (fr) Procede de production de monocristaux de calcite optique.
FR2640438B1 (fr) Procede de realisation de lasers semi-conducteurs et lasers obtenus par le procede
ES8502316A1 (es) Un procedimiento para mejorar el crecimiento de las plantas en invernaderos o celdas climaticas
ES549095A0 (es) Un metodo para producir derivados de bromodicloroimidazol.
FR2724769B1 (fr) Procede de realisation de diodes laser a emission surfacique
FR2665324B1 (fr) Procede de fabrication de circuit imprime et circuit obtenu par ce procede.
FR2656869B1 (fr) Procede de production de methylpolysilanes et methylpolysilanes obtenus par ce procede.
ES536434A0 (es) Un metodo para producir derivados de citidina
BE888374A (fr) Nouveau profile destine plus particulierement a la realisation de serres,
FR2601945B1 (fr) Procede de realisation d&#39;un gel incendiaire, et gel incendiaire obtenu par ce procede
MA21966A1 (fr) Procede de production de tetrathiocarbonates .
AT374782B (de) Verfahren zur gewinnung von hochreiner 2-methoxy -3,6-dichlorbenzoesaeure
AU574919B2 (en) Method for producing width trimmed elongate sheet

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse