FR2525819B1 - Cellule photo-electrique a semi-conducteur - Google Patents
Cellule photo-electrique a semi-conducteurInfo
- Publication number
- FR2525819B1 FR2525819B1 FR8220192A FR8220192A FR2525819B1 FR 2525819 B1 FR2525819 B1 FR 2525819B1 FR 8220192 A FR8220192 A FR 8220192A FR 8220192 A FR8220192 A FR 8220192A FR 2525819 B1 FR2525819 B1 FR 2525819B1
- Authority
- FR
- France
- Prior art keywords
- photoelectric cell
- semiconductor photoelectric
- semiconductor
- cell
- photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/372,103 US4453173A (en) | 1982-04-27 | 1982-04-27 | Photocell utilizing a wide-bandgap semiconductor material |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2525819A1 FR2525819A1 (fr) | 1983-10-28 |
FR2525819B1 true FR2525819B1 (fr) | 1987-04-30 |
Family
ID=23466728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8220192A Expired FR2525819B1 (fr) | 1982-04-27 | 1982-12-02 | Cellule photo-electrique a semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US4453173A (fr) |
JP (1) | JPS58192387A (fr) |
DE (1) | DE3246948A1 (fr) |
FR (1) | FR2525819B1 (fr) |
GB (1) | GB2119167B (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0628313B2 (ja) * | 1982-01-19 | 1994-04-13 | キヤノン株式会社 | 半導体素子 |
EP0095283A3 (fr) * | 1982-05-15 | 1984-12-27 | The British Petroleum Company p.l.c. | Dispositif de mémoire |
DE3379441D1 (en) * | 1982-09-23 | 1989-04-20 | Secr Defence Brit | Infrared detectors |
NL8204056A (nl) * | 1982-10-21 | 1984-05-16 | Oce Nederland Bv | Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen. |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
JPS59163875A (ja) * | 1983-03-08 | 1984-09-14 | Agency Of Ind Science & Technol | アモルフアスシリコン太陽電池 |
US4542256A (en) * | 1984-04-27 | 1985-09-17 | University Of Delaware | Graded affinity photovoltaic cell |
DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
JPS613475A (ja) * | 1984-06-15 | 1986-01-09 | Sanyo Electric Co Ltd | 光起電力素子 |
JPS6193672A (ja) * | 1984-10-12 | 1986-05-12 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS61279179A (ja) * | 1985-06-04 | 1986-12-09 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
JPS63289970A (ja) * | 1987-05-22 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 太陽電池電源 |
JPS6432683A (en) * | 1987-07-28 | 1989-02-02 | Japan Engine Valve Mfg | Semiconductor element |
JPH01145875A (ja) * | 1987-12-02 | 1989-06-07 | Hitachi Ltd | アモルファスSi太陽電池 |
JP2846651B2 (ja) * | 1989-03-31 | 1999-01-13 | 三洋電機株式会社 | 光起電力装置 |
DE4410220B4 (de) * | 1994-03-24 | 2005-02-17 | Forschungszentrum Jülich GmbH | Dünnschicht-Solarzelle |
US6784361B2 (en) * | 2000-09-20 | 2004-08-31 | Bp Corporation North America Inc. | Amorphous silicon photovoltaic devices |
DE102005013537A1 (de) * | 2004-03-24 | 2005-10-20 | Sharp Kk | Fotoelektrischer Wandler und Herstellverfahren für einen solchen |
JP5197930B2 (ja) * | 2006-06-30 | 2013-05-15 | 住友電工デバイス・イノベーション株式会社 | 半導体受光素子の製造方法 |
US8232470B2 (en) * | 2009-09-11 | 2012-07-31 | Rosestreet Labs Energy, Inc. | Dilute Group III-V nitride intermediate band solar cells with contact blocking layers |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
US4163987A (en) * | 1977-05-02 | 1979-08-07 | Hughes Aircraft Company | GaAs-GaAlAs solar cells |
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
CA1136773A (fr) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Dispositif semiconducteur |
GB2030766A (en) * | 1978-09-02 | 1980-04-10 | Plessey Co Ltd | Laser treatment of semiconductor material |
JPS5944791B2 (ja) * | 1979-03-26 | 1984-11-01 | 松下電器産業株式会社 | 半導体素子 |
US4217148A (en) * | 1979-06-18 | 1980-08-12 | Rca Corporation | Compensated amorphous silicon solar cell |
DE3032158A1 (de) * | 1979-08-30 | 1981-04-02 | Plessey Overseas Ltd., Ilford, Essex | Solarzelle |
US4358782A (en) * | 1980-01-17 | 1982-11-09 | Asahi Kasei Kogyo Kabushiki Kaisha | Semiconductor device |
US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
CA1176740A (fr) * | 1980-12-03 | 1984-10-23 | Yoshihisa Tawada | Cellule photovoltaique a haute tension ayant une heterojonction de semiconducteur amorphe et de silicium amorphe |
US4388848A (en) * | 1981-05-04 | 1983-06-21 | Q Corporation | Cutter ring and method of making same |
-
1982
- 1982-04-27 US US06/372,103 patent/US4453173A/en not_active Expired - Lifetime
- 1982-12-02 FR FR8220192A patent/FR2525819B1/fr not_active Expired
- 1982-12-15 GB GB08235722A patent/GB2119167B/en not_active Expired
- 1982-12-18 DE DE19823246948 patent/DE3246948A1/de active Granted
- 1982-12-22 JP JP57225781A patent/JPS58192387A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3246948C2 (fr) | 1993-05-19 |
JPS58192387A (ja) | 1983-11-09 |
GB2119167B (en) | 1986-03-05 |
GB2119167A (en) | 1983-11-09 |
FR2525819A1 (fr) | 1983-10-28 |
JPH0462186B2 (fr) | 1992-10-05 |
DE3246948A1 (de) | 1983-10-27 |
US4453173A (en) | 1984-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2525819B1 (fr) | Cellule photo-electrique a semi-conducteur | |
IT1161895B (it) | Memoria a semiconduttori | |
FR2522815B1 (fr) | Cellule dynamometrique | |
ES547210A0 (es) | Un dispositivo fotovoltaico | |
FR2522206B1 (fr) | Laser a semi-conducteur | |
DE3479943D1 (de) | A masterslice semiconductor device | |
KR860005215A (ko) | 반도체 광검출기 | |
ES520127A0 (es) | Perfeccionamientos en un dispositivo fotovoltaico | |
KR860004479A (ko) | 반도체 광검출기 장치 | |
FR2530336B1 (fr) | Cellule de pesage | |
FR2492168B1 (fr) | Photodiode a semiconducteur | |
DE3378335D1 (de) | Amorphous silicium solar cell | |
MX157839A (es) | Dispositivo fotovoltaico semi-conductor amorfo mejorado | |
FI832004L (fi) | Foerfarande foer framstaellning av 1-sulfo-2-oxoazetidinderivat | |
BR8301160A (pt) | Dispositivo fotovoltaico | |
IT1168281B (it) | Dispositivo di memoria a semiconduttori | |
KR840004399U (ko) | 태양열 콜렉터 | |
DE3370594D1 (de) | Diffusion cell | |
KR840004398U (ko) | 태양열 집열장치 | |
DE3382192D1 (de) | Solarzelle. | |
FR2548832B1 (fr) | Module solaire photo-electrique | |
IT1149658B (it) | Dispositivo a semiconduttori | |
DE3176910D1 (en) | Semiconductor photoelectric device | |
BE876281A (fr) | Cellule photoelectrique a jonction semiconducteur-liquide | |
DK100983A (da) | Cadmiumsulfid-solceller |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |