FR2521777B1 - Procede et appareil de balayage par un faisceau pour l'implantation ionique - Google Patents
Procede et appareil de balayage par un faisceau pour l'implantation ioniqueInfo
- Publication number
- FR2521777B1 FR2521777B1 FR8301167A FR8301167A FR2521777B1 FR 2521777 B1 FR2521777 B1 FR 2521777B1 FR 8301167 A FR8301167 A FR 8301167A FR 8301167 A FR8301167 A FR 8301167A FR 2521777 B1 FR2521777 B1 FR 2521777B1
- Authority
- FR
- France
- Prior art keywords
- ion implantation
- scan method
- beam scan
- implantation
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/349,742 US4421988A (en) | 1982-02-18 | 1982-02-18 | Beam scanning method and apparatus for ion implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2521777A1 FR2521777A1 (fr) | 1983-08-19 |
FR2521777B1 true FR2521777B1 (fr) | 1989-07-28 |
Family
ID=23373761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8301167A Expired FR2521777B1 (fr) | 1982-02-18 | 1983-01-26 | Procede et appareil de balayage par un faisceau pour l'implantation ionique |
Country Status (8)
Country | Link |
---|---|
US (1) | US4421988A (fr) |
JP (1) | JPS58190023A (fr) |
CA (1) | CA1189198A (fr) |
CH (1) | CH666141A5 (fr) |
DE (1) | DE3304773A1 (fr) |
FR (1) | FR2521777B1 (fr) |
GB (1) | GB2116357B (fr) |
NL (1) | NL191195C (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4578589A (en) * | 1983-08-15 | 1986-03-25 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
DE3480449D1 (de) * | 1983-08-15 | 1989-12-14 | Applied Materials Inc | Apparatus for ion implantation |
JPS60143630A (ja) * | 1983-12-29 | 1985-07-29 | Fujitsu Ltd | イオン注入方法 |
GB8417040D0 (en) * | 1984-07-04 | 1984-08-08 | Salford University Of | Modifying properties of material |
JPH0630237B2 (ja) * | 1984-09-10 | 1994-04-20 | 株式会社日立製作所 | イオン打込み装置 |
JPS61240553A (ja) * | 1985-04-18 | 1986-10-25 | Jeol Ltd | イオンビ−ム描画装置 |
US4980562A (en) * | 1986-04-09 | 1990-12-25 | Varian Associates, Inc. | Method and apparatus for high efficiency scanning in an ion implanter |
JPS62287557A (ja) * | 1986-06-05 | 1987-12-14 | Tokyo Electron Ltd | イオン注入装置 |
US4736107A (en) * | 1986-09-24 | 1988-04-05 | Eaton Corporation | Ion beam implanter scan control system |
US4804852A (en) * | 1987-01-29 | 1989-02-14 | Eaton Corporation | Treating work pieces with electro-magnetically scanned ion beams |
GB2216714B (en) * | 1988-03-11 | 1992-10-14 | Ulvac Corp | Ion implanter system |
US5981961A (en) * | 1996-03-15 | 1999-11-09 | Applied Materials, Inc. | Apparatus and method for improved scanning efficiency in an ion implanter |
US5886356A (en) * | 1997-03-17 | 1999-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Automatic supervision system on the ion beam map for ion implantation process |
US6020592A (en) * | 1998-08-03 | 2000-02-01 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6300643B1 (en) | 1998-08-03 | 2001-10-09 | Varian Semiconductor Equipment Associates, Inc. | Dose monitor for plasma doping system |
US6676595B1 (en) | 1998-08-24 | 2004-01-13 | Varian Medical Systems Technologies, Inc. | Radioactive medical implant and method of manufacturing |
JP3580254B2 (ja) * | 1999-09-27 | 2004-10-20 | 株式会社日立製作所 | 荷電粒子ビーム照射装置及びその制御方法 |
US6677599B2 (en) * | 2000-03-27 | 2004-01-13 | Applied Materials, Inc. | System and method for uniformly implanting a wafer with an ion beam |
US6580083B2 (en) | 2000-05-15 | 2003-06-17 | Varian Semiconductor Equipment Associates, Inc. | High efficiency scanning in ion implanters |
US6323497B1 (en) | 2000-06-02 | 2001-11-27 | Varian Semiconductor Equipment Assoc. | Method and apparatus for controlling ion implantation during vacuum fluctuation |
WO2001099144A2 (fr) | 2000-06-22 | 2001-12-27 | Proteros, Llc | Uniformisation d'une implantation ionique par la commande du courant de faisceau |
US7309997B1 (en) | 2000-09-15 | 2007-12-18 | Varian Semiconductor Equipment Associates, Inc. | Monitor system and method for semiconductor processes |
US7547460B2 (en) | 2000-09-15 | 2009-06-16 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter optimizer scan waveform retention and recovery |
KR100845635B1 (ko) * | 2000-11-22 | 2008-07-10 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 이온 주입용 하이브리드 주사 시스템 및 방법 |
US6710359B2 (en) | 2001-03-23 | 2004-03-23 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for scanned beam uniformity adjustment in ion implanters |
US6908836B2 (en) * | 2002-09-23 | 2005-06-21 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7049210B2 (en) * | 2002-09-23 | 2006-05-23 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7282427B1 (en) | 2006-05-04 | 2007-10-16 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US7442944B2 (en) | 2004-10-07 | 2008-10-28 | Varian Semiconductor Equipment Associates, Inc. | Ion beam implant current, spot width and position tuning |
US7355188B2 (en) * | 2005-05-24 | 2008-04-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for uniformity tuning in an ion implanter system |
JP4748714B2 (ja) * | 2005-10-28 | 2011-08-17 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法 |
JP2007123164A (ja) * | 2005-10-31 | 2007-05-17 | Sii Nanotechnology Inc | 荷電粒子ビーム照射方法及び荷電粒子ビーム装置 |
US7176470B1 (en) | 2005-12-22 | 2007-02-13 | Varian Semiconductor Equipment Associates, Inc. | Technique for high-efficiency ion implantation |
JP5143606B2 (ja) * | 2008-03-28 | 2013-02-13 | 住友重機械工業株式会社 | 荷電粒子線照射装置 |
JP5448586B2 (ja) * | 2009-06-05 | 2014-03-19 | キヤノン株式会社 | 光学素子の製造方法 |
JP5701201B2 (ja) * | 2011-12-19 | 2015-04-15 | 株式会社Sen | イオン注入方法及びイオン注入装置 |
DE102016122791B3 (de) * | 2016-11-25 | 2018-05-30 | mi2-factory GmbH | Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
US4131487A (en) * | 1977-10-26 | 1978-12-26 | Western Electric Company, Inc. | Gettering semiconductor wafers with a high energy laser beam |
JPS54102934A (en) * | 1978-01-31 | 1979-08-13 | Fujitsu Ltd | Communication control system between plural processors and common input/output devices |
NL183553C (nl) * | 1978-05-12 | 1988-11-16 | Philips Nv | Inrichting voor het richten van elektrisch geladen deeltjes naar een trefplaats. |
NL182924C (nl) * | 1978-05-12 | 1988-06-01 | Philips Nv | Inrichting voor het implanteren van ionen in een trefplaat. |
US4283631A (en) * | 1980-02-22 | 1981-08-11 | Varian Associates, Inc. | Bean scanning and method of use for ion implantation |
-
1982
- 1982-02-18 US US06/349,742 patent/US4421988A/en not_active Expired - Lifetime
-
1983
- 1983-01-07 NL NL8300056A patent/NL191195C/xx not_active IP Right Cessation
- 1983-01-26 FR FR8301167A patent/FR2521777B1/fr not_active Expired
- 1983-01-31 GB GB08302590A patent/GB2116357B/en not_active Expired
- 1983-02-11 DE DE19833304773 patent/DE3304773A1/de active Granted
- 1983-02-17 JP JP58023898A patent/JPS58190023A/ja active Granted
- 1983-02-17 CH CH885/83A patent/CH666141A5/de not_active IP Right Cessation
- 1983-02-17 CA CA000421799A patent/CA1189198A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL191195B (nl) | 1994-10-03 |
GB8302590D0 (en) | 1983-03-02 |
JPS58190023A (ja) | 1983-11-05 |
DE3304773A1 (de) | 1983-08-25 |
GB2116357A (en) | 1983-09-21 |
FR2521777A1 (fr) | 1983-08-19 |
NL8300056A (nl) | 1983-09-16 |
US4421988A (en) | 1983-12-20 |
CH666141A5 (de) | 1988-06-30 |
CA1189198A (fr) | 1985-06-18 |
JPH0526328B2 (fr) | 1993-04-15 |
DE3304773C2 (fr) | 1993-05-27 |
NL191195C (nl) | 1995-03-01 |
GB2116357B (en) | 1985-07-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |