FR2516703B1 - Procede de fixation et d'isolation d'un dispositif semi-conducteur sur une plaque de refroidissement - Google Patents

Procede de fixation et d'isolation d'un dispositif semi-conducteur sur une plaque de refroidissement

Info

Publication number
FR2516703B1
FR2516703B1 FR8219301A FR8219301A FR2516703B1 FR 2516703 B1 FR2516703 B1 FR 2516703B1 FR 8219301 A FR8219301 A FR 8219301A FR 8219301 A FR8219301 A FR 8219301A FR 2516703 B1 FR2516703 B1 FR 2516703B1
Authority
FR
France
Prior art keywords
isolating
fixing
semiconductor device
cooling plate
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8219301A
Other languages
English (en)
Other versions
FR2516703A1 (fr
Inventor
Ronald Charles Lowe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Industries Ltd filed Critical Lucas Industries Ltd
Publication of FR2516703A1 publication Critical patent/FR2516703A1/fr
Application granted granted Critical
Publication of FR2516703B1 publication Critical patent/FR2516703B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731Ceramic materials or glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142Metallic substrates having insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR8219301A 1981-11-18 1982-11-18 Procede de fixation et d'isolation d'un dispositif semi-conducteur sur une plaque de refroidissement Expired FR2516703B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8134693 1981-11-18

Publications (2)

Publication Number Publication Date
FR2516703A1 FR2516703A1 (fr) 1983-05-20
FR2516703B1 true FR2516703B1 (fr) 1986-02-07

Family

ID=10525963

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8219301A Expired FR2516703B1 (fr) 1981-11-18 1982-11-18 Procede de fixation et d'isolation d'un dispositif semi-conducteur sur une plaque de refroidissement

Country Status (1)

Country Link
FR (1) FR2516703B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH382297A (de) * 1959-02-27 1964-09-30 Siemens Ag Trockengleichrichteranordnung
DE1242758B (de) * 1961-04-07 1967-06-22 Siemens Ag Halbleiteranordnung, insbesondere fuer grosse Leistungen, bei der ein duenner, scheibenfoermiger Halbleiterkoerper auf einer Traegerplatte befestigt ist
US3526814A (en) * 1968-04-03 1970-09-01 Itt Heat sink arrangement for a semiconductor device
DE2837300A1 (de) * 1978-08-26 1980-03-06 Bbc Brown Boveri & Cie Halbleiteranordnung
JPS5550646A (en) * 1978-10-06 1980-04-12 Hitachi Ltd Integrated circuit device
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS5662349A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
FR2516703A1 (fr) 1983-05-20

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Legal Events

Date Code Title Description
ST Notification of lapse