FR2493616B1 - Laser a injection a heterostructure - Google Patents
Laser a injection a heterostructureInfo
- Publication number
- FR2493616B1 FR2493616B1 FR8120291A FR8120291A FR2493616B1 FR 2493616 B1 FR2493616 B1 FR 2493616B1 FR 8120291 A FR8120291 A FR 8120291A FR 8120291 A FR8120291 A FR 8120291A FR 2493616 B1 FR2493616 B1 FR 2493616B1
- Authority
- FR
- France
- Prior art keywords
- injection laser
- heterostructure injection
- heterostructure
- laser
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/204,430 US4371966A (en) | 1980-11-06 | 1980-11-06 | Heterostructure lasers with combination active strip and passive waveguide strip |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2493616A1 FR2493616A1 (fr) | 1982-05-07 |
FR2493616B1 true FR2493616B1 (fr) | 1987-02-06 |
Family
ID=22757837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8120291A Expired FR2493616B1 (fr) | 1980-11-06 | 1981-10-29 | Laser a injection a heterostructure |
Country Status (3)
Country | Link |
---|---|
US (1) | US4371966A (fr) |
JP (1) | JPS57106192A (fr) |
FR (1) | FR2493616B1 (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4447904A (en) * | 1981-02-04 | 1984-05-08 | Xerox Corporation | Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition |
US4448797A (en) * | 1981-02-04 | 1984-05-15 | Xerox Corporation | Masking techniques in chemical vapor deposition |
US4488307A (en) * | 1982-06-07 | 1984-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Three-mirror active-passive semiconductor laser |
US4523316A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with non-absorbing mirror facet |
US4523317A (en) * | 1982-10-29 | 1985-06-11 | Rca Corporation | Semiconductor laser with reduced absorption at a mirror facet |
US4831630A (en) * | 1983-04-14 | 1989-05-16 | Xerox Corporation | Phased-locked window lasers |
US4722088A (en) * | 1984-09-14 | 1988-01-26 | Siemens Aktiengesellschaft | Semiconductor laser for high optical output power with reduced mirror heating |
JPS6174388A (ja) * | 1984-09-19 | 1986-04-16 | Mitsubishi Electric Corp | 半導体レ−ザ装置の製造方法 |
DE3435148A1 (de) * | 1984-09-25 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode |
US4631730A (en) * | 1984-09-28 | 1986-12-23 | Bell Communications Research, Inc. | Low noise injection laser structure |
DE3530466A1 (de) * | 1985-08-27 | 1987-03-05 | Licentia Gmbh | Indexgefuehrter halbleiterlaser |
DE3604294A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdioden |
DE3604293A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
DE3604295A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
GB8622767D0 (en) * | 1986-09-22 | 1986-10-29 | British Telecomm | Semiconductor structures |
JPH0614575B2 (ja) * | 1987-07-10 | 1994-02-23 | シャープ株式会社 | 半導体レーザ素子 |
GB2222307B (en) * | 1988-07-22 | 1992-04-01 | Mitsubishi Electric Corp | Semiconductor laser |
JPH02203586A (ja) * | 1989-02-01 | 1990-08-13 | Mitsubishi Electric Corp | 半導体レーザ装置とその製造方法 |
JP2686306B2 (ja) * | 1989-02-01 | 1997-12-08 | 三菱電機株式会社 | 半導体レーザ装置とその製造方法 |
JP3444610B2 (ja) * | 1992-09-29 | 2003-09-08 | 三菱化学株式会社 | 半導体レーザ装置 |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JP3386261B2 (ja) * | 1994-12-05 | 2003-03-17 | 三菱電機株式会社 | 光半導体装置、及びその製造方法 |
JPH08222798A (ja) * | 1995-02-15 | 1996-08-30 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
JP2002141611A (ja) * | 2000-08-24 | 2002-05-17 | Fuji Photo Film Co Ltd | 半導体発光素子およびその製造方法 |
DE60129261T2 (de) * | 2000-10-12 | 2008-05-08 | Fujifilm Corp. | Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche |
US6956983B2 (en) * | 2002-05-31 | 2005-10-18 | Intel Corporation | Epitaxial growth for waveguide tapering |
US6989284B2 (en) * | 2002-05-31 | 2006-01-24 | Intel Corporation | Fabrication of a waveguide taper through ion implantation |
GB2411520A (en) * | 2004-02-25 | 2005-08-31 | Agilent Technologies Inc | Method of forming laser mesa by reactive ion etching followed by in situ etching in regrowth reactor |
JP4541208B2 (ja) * | 2005-03-30 | 2010-09-08 | アンリツ株式会社 | 半導体発光素子 |
KR100842277B1 (ko) * | 2006-12-07 | 2008-06-30 | 한국전자통신연구원 | 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드 |
DE102008025922B4 (de) * | 2008-05-30 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit Phasenstruktur |
CN114512896A (zh) * | 2020-10-23 | 2022-05-17 | 苏州洛合镭信光电科技有限公司 | 半导体光源及制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4994292A (fr) * | 1973-01-11 | 1974-09-06 | ||
US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
JPS546788A (en) * | 1977-06-17 | 1979-01-19 | Nec Corp | Stripe-type double hetero-junction laser element |
JPS54115088A (en) * | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
JPS54154984A (en) * | 1978-05-12 | 1979-12-06 | Nec Corp | Semiconductor laser device and its manufacture |
JPS5562792A (en) * | 1978-10-11 | 1980-05-12 | Nec Corp | Injection type semiconductor laser element |
GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
-
1980
- 1980-11-06 US US06/204,430 patent/US4371966A/en not_active Expired - Lifetime
-
1981
- 1981-10-29 FR FR8120291A patent/FR2493616B1/fr not_active Expired
- 1981-10-30 JP JP56175547A patent/JPS57106192A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2493616A1 (fr) | 1982-05-07 |
US4371966A (en) | 1983-02-01 |
JPS57106192A (en) | 1982-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |