FR2447115B1 - Amplificateur a transconductance a effet de champ - Google Patents

Amplificateur a transconductance a effet de champ

Info

Publication number
FR2447115B1
FR2447115B1 FR8001022A FR8001022A FR2447115B1 FR 2447115 B1 FR2447115 B1 FR 2447115B1 FR 8001022 A FR8001022 A FR 8001022A FR 8001022 A FR8001022 A FR 8001022A FR 2447115 B1 FR2447115 B1 FR 2447115B1
Authority
FR
France
Prior art keywords
field effect
transconductance amplifier
effect transconductance
amplifier
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8001022A
Other languages
English (en)
Other versions
FR2447115A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KNAPP RICHARD
Original Assignee
KNAPP RICHARD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KNAPP RICHARD filed Critical KNAPP RICHARD
Publication of FR2447115A1 publication Critical patent/FR2447115A1/fr
Application granted granted Critical
Publication of FR2447115B1 publication Critical patent/FR2447115B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
FR8001022A 1979-01-18 1980-01-17 Amplificateur a transconductance a effet de champ Expired FR2447115B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/004,572 US4241316A (en) 1979-01-18 1979-01-18 Field effect transconductance amplifiers

Publications (2)

Publication Number Publication Date
FR2447115A1 FR2447115A1 (fr) 1980-08-14
FR2447115B1 true FR2447115B1 (fr) 1986-11-28

Family

ID=21711439

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8001022A Expired FR2447115B1 (fr) 1979-01-18 1980-01-17 Amplificateur a transconductance a effet de champ

Country Status (6)

Country Link
US (2) US4241316A (fr)
JP (1) JPS56500057A (fr)
DE (1) DE3028614A1 (fr)
FR (1) FR2447115B1 (fr)
GB (1) GB2059211B (fr)
WO (1) WO1980001527A1 (fr)

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US4465980A (en) * 1982-09-23 1984-08-14 Rca Corporation Predistortion circuit for a power amplifier
FR2558659B1 (fr) * 1984-01-20 1986-04-25 Thomson Csf Circuit de polarisation d'un transistor a effet de champ
US4677391A (en) * 1984-11-23 1987-06-30 Microwave Technology, Inc. Series biasing scheme for field effect transistors
US4596959A (en) * 1984-11-23 1986-06-24 Microwave Technology, Inc. Series biasing scheme for field effect transistors
US4631493A (en) * 1985-03-18 1986-12-23 Eaton Corporation Circuit for DC biasing
US4864162A (en) * 1988-05-10 1989-09-05 Grumman Aerospace Corporation Voltage variable FET resistor with chosen resistance-voltage relationship
US4875023A (en) * 1988-05-10 1989-10-17 Grumman Aerospace Corporation Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship
US4918338A (en) * 1988-10-04 1990-04-17 North American Philips Corporation Drain-biassed transresistance device for continuous time filters
JP2960095B2 (ja) * 1990-02-27 1999-10-06 日本ヒューレット・パッカード株式会社 回路素子測定装置
US5065043A (en) * 1990-03-09 1991-11-12 Texas Instruments Incorporated Biasing circuits for field effect transistors using GaAs FETS
US6057972A (en) * 1995-11-03 2000-05-02 International Business Machines Corporation Current source for a magnetoresistive head with variability and selectable slew rate
US6300835B1 (en) * 1999-12-10 2001-10-09 Motorola, Inc. Power amplifier core
DE10001124C1 (de) * 2000-01-13 2001-06-07 Infineon Technologies Ag Schaltungsanordnung und ein Verfahren zur Reduktion des 1/f-Rauschens von MOSFETs
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6642578B1 (en) * 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
EP1424771A1 (fr) * 2002-11-28 2004-06-02 STMicroelectronics S.r.l. Amplificateur cascode de puissance utilisé notamment dans le cadre des applications à radiofréquence
JP2004205301A (ja) * 2002-12-25 2004-07-22 Nec Corp 評価装置及びそれに用いる回路設計方法
EP3570374B1 (fr) 2004-06-23 2022-04-20 pSemi Corporation Extrémité avant rf intégrée
US7248120B2 (en) * 2004-06-23 2007-07-24 Peregrine Semiconductor Corporation Stacked transistor method and apparatus
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7508249B2 (en) * 2005-07-27 2009-03-24 Analog Devices, Inc. Distributed transistor structure for high linearity active CATV power splitter
DE102006028093B4 (de) * 2006-06-19 2014-07-03 Austriamicrosystems Ag Verstärkeranordnung und Verfahren zum Verstärken eines Signals
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP2255443B1 (fr) 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Procédé et appareil destinés au réglage numérique d un condensateur dans un dispositif à circuit intégré
US8007727B2 (en) 2008-05-30 2011-08-30 Intel Corporation Virtual semiconductor nanowire, and methods of using same
EP2329594A4 (fr) * 2008-09-11 2014-02-19 Thomas Rogoff Audio Pty Ltd Circuit d'amplificateur cascode à faible distorsion
US7911280B2 (en) * 2009-07-13 2011-03-22 Sony Ericsson Mobile Communications Ab Amplifier stage
FR2950208B1 (fr) * 2009-09-17 2011-10-14 St Microelectronics Grenoble 2 Etage de sortie d'un amplificateur classe a
US8786368B2 (en) 2011-03-09 2014-07-22 Hittite Microwave Corporation Distributed amplifier with improved stabilization
DE102011083912B4 (de) * 2011-09-30 2017-10-19 Intel Deutschland Gmbh Schaltung und leistungsverstärker
US9088248B2 (en) 2012-05-16 2015-07-21 Intel Mobile Communications GmbH Amplifier and mobile communication device
JP6136165B2 (ja) * 2012-09-28 2017-05-31 住友電気工業株式会社 電子回路
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
CN104518740A (zh) * 2013-09-29 2015-04-15 Lsi公司 电压跟随器放大器
EP2878927B1 (fr) * 2013-11-29 2016-10-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Circuit de détection destiné à mesurer une quantité physique
US10530190B2 (en) 2014-10-31 2020-01-07 Teslonix Inc. Wireless energy transfer in a multipath environment
US10474852B2 (en) 2014-10-31 2019-11-12 Teslonix Inc. Charging long-range radio frequency identification tags
US10256678B2 (en) 2014-10-31 2019-04-09 Teslonix Inc. Wireless energy transfer using alignment of electromagnetic waves
US10439444B2 (en) * 2014-10-31 2019-10-08 Teslonix Inc. Wireless energy transfer using alignment of electromagnetic waves
US9985588B2 (en) * 2015-11-10 2018-05-29 Skyworks Solutions, Inc. Distortion correction in cascode power amplifiers
US11201595B2 (en) 2015-11-24 2021-12-14 Skyworks Solutions, Inc. Cascode power amplifier with switchable output matching network
WO2018019377A1 (fr) * 2016-07-28 2018-02-01 Huawei Technologies Co., Ltd. Compensateur pour amplificateur mmic hemt
US10250199B2 (en) * 2016-09-16 2019-04-02 Psemi Corporation Cascode amplifier bias circuits
JP2019536374A (ja) * 2016-11-23 2019-12-12 サーキット シード エルエルシー 電流注入電界効果トランジスタ素子の相補対を使用した低雑音センサ増幅器およびトランスインピーダンス増幅器
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US10461705B2 (en) 2017-03-27 2019-10-29 Skyworks Solutions, Inc. Apparatus and methods for oscillation suppression of cascode power amplifiers
US9948252B1 (en) 2017-04-06 2018-04-17 Psemi Corporation Device stack with novel gate capacitor topology
US10796112B2 (en) 2018-05-28 2020-10-06 Teslonix Inc. Protocol layer coordination of wireless energy transfer systems
US10862429B2 (en) 2019-01-09 2020-12-08 Silanna Asia Pte Ltd Apparatus for optimized turn-off of a cascode amplifier
JP2021082960A (ja) * 2019-11-20 2021-05-27 株式会社村田製作所 電力増幅回路
CN115378372B (zh) * 2022-10-24 2023-04-07 成都嘉纳海威科技有限责任公司 一种低功耗线性化放大器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286189A (en) * 1964-01-20 1966-11-15 Ithaco High gain field-effect transistor-loaded amplifier
JPS436496Y1 (fr) * 1965-10-27 1968-03-23
US3462701A (en) * 1967-01-26 1969-08-19 Honeywell Inc Biasing circuit for use with field-effect transistors
US3517325A (en) * 1967-03-09 1970-06-23 Instrumentation Labor Inc Compensated dc amplifier input stage employing junction field effect transistors
US3449683A (en) * 1967-04-26 1969-06-10 Us Navy Operational thin film amplifier
US3449686A (en) * 1967-05-29 1969-06-10 Us Navy Variable gain amplifier
US3723892A (en) * 1972-03-22 1973-03-27 Julie Res Labor Inc Circuit using dynamic high impedance load
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
DE2823662A1 (de) * 1978-05-30 1979-12-06 Siemens Ag Schaltungsanordnung zur arbeitspunktstabilisierung eines verstaerker-feldeffekttransistors

Also Published As

Publication number Publication date
DE3028614A1 (en) 1981-02-26
WO1980001527A1 (fr) 1980-07-24
JPS56500057A (fr) 1981-01-16
FR2447115A1 (fr) 1980-08-14
US4496909A (en) 1985-01-29
GB2059211B (en) 1983-04-20
GB2059211A (en) 1981-04-15
US4241316A (en) 1980-12-23

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Legal Events

Date Code Title Description
ST Notification of lapse