FR2420824B1 - Memoire permanente programmable a metal-oxyde-semi-conducteur - Google Patents

Memoire permanente programmable a metal-oxyde-semi-conducteur

Info

Publication number
FR2420824B1
FR2420824B1 FR7906983A FR7906983A FR2420824B1 FR 2420824 B1 FR2420824 B1 FR 2420824B1 FR 7906983 A FR7906983 A FR 7906983A FR 7906983 A FR7906983 A FR 7906983A FR 2420824 B1 FR2420824 B1 FR 2420824B1
Authority
FR
France
Prior art keywords
oxide
semiconductor memory
permanent metal
permanent
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7906983A
Other languages
English (en)
Other versions
FR2420824A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/890,557 external-priority patent/US4198693A/en
Priority claimed from US05/890,555 external-priority patent/US4290184A/en
Priority claimed from US05/890,556 external-priority patent/US4384399A/en
Priority claimed from US05900549 external-priority patent/US4230504B1/en
Priority claimed from US05/907,236 external-priority patent/US4385432A/en
Priority claimed from US06/001,571 external-priority patent/US4294001A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2420824A1 publication Critical patent/FR2420824A1/fr
Application granted granted Critical
Publication of FR2420824B1 publication Critical patent/FR2420824B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/36—Gate programmed, e.g. different gate material or no gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/383—Channel doping programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FR7906983A 1978-03-20 1979-03-20 Memoire permanente programmable a metal-oxyde-semi-conducteur Expired FR2420824B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US05/890,557 US4198693A (en) 1978-03-20 1978-03-20 VMOS Read only memory
US05/890,555 US4290184A (en) 1978-03-20 1978-03-20 Method of making post-metal programmable MOS read only memory
US05/890,556 US4384399A (en) 1978-03-20 1978-03-20 Method of making a metal programmable MOS read only memory device
US05900549 US4230504B1 (en) 1978-04-27 1978-04-27 Method of making implant programmable N-channel rom
US05/907,236 US4385432A (en) 1978-05-18 1978-05-18 Closely-spaced double level conductors for MOS read only
US06/001,571 US4294001A (en) 1979-01-08 1979-01-08 Method of making implant programmable metal gate MOS read only memory

Publications (2)

Publication Number Publication Date
FR2420824A1 FR2420824A1 (fr) 1979-10-19
FR2420824B1 true FR2420824B1 (fr) 1987-08-14

Family

ID=27555391

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7906983A Expired FR2420824B1 (fr) 1978-03-20 1979-03-20 Memoire permanente programmable a metal-oxyde-semi-conducteur

Country Status (4)

Country Link
JP (1) JPS54130887A (fr)
DE (1) DE2909197A1 (fr)
FR (1) FR2420824B1 (fr)
GB (1) GB2017406B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL61671A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Diode and rom or eeprom devices using it
US4336647A (en) * 1979-12-21 1982-06-29 Texas Instruments Incorporated Method of making implant programmable N-channel read only memory
JPS56150860A (en) * 1980-04-24 1981-11-21 Fujitsu Ltd Manufacture of semiconductor memory device
JPS583192A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd 読み出し専用メモリ
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法
EP0109853A3 (fr) * 1982-11-23 1985-06-26 American Microsystems, Incorporated Dispositifs de mémoire semi-conducteurs et leur procédé de fabrication
EP0109854A3 (fr) * 1982-11-23 1985-08-07 American Microsystems, Incorporated Dispositifs de mémoire semi-conducteurs et leur procédé de fabrication
JPS6396953A (ja) * 1986-10-13 1988-04-27 Sharp Corp 半導体装置
DE19514834C1 (de) * 1995-04-21 1997-01-09 Siemens Ag Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
US4059826A (en) * 1975-12-29 1977-11-22 Texas Instruments Incorporated Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage

Also Published As

Publication number Publication date
FR2420824A1 (fr) 1979-10-19
GB2017406B (en) 1983-02-02
JPS54130887A (en) 1979-10-11
GB2017406A (en) 1979-10-03
DE2909197A1 (de) 1979-10-04

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Legal Events

Date Code Title Description
ST Notification of lapse
AR Application made for restoration
BR Restoration of rights