FR2415878A1 - HIGH STABILITY INTEGRATED CIRCUIT RESISTANCE - Google Patents

HIGH STABILITY INTEGRATED CIRCUIT RESISTANCE

Info

Publication number
FR2415878A1
FR2415878A1 FR7901622A FR7901622A FR2415878A1 FR 2415878 A1 FR2415878 A1 FR 2415878A1 FR 7901622 A FR7901622 A FR 7901622A FR 7901622 A FR7901622 A FR 7901622A FR 2415878 A1 FR2415878 A1 FR 2415878A1
Authority
FR
France
Prior art keywords
integrated circuit
high stability
circuit resistance
resistance
stability integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7901622A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2415878A1 publication Critical patent/FR2415878A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne la fabrication des circuits intégrés. Une résistance de valeur élevée, réalisée par implantation ionique, est entièrement recouverte par une plaque de champ 15, constituée par une couche conductrice. Cette plaque est avantageusement connectée à la borne la plus négative de la résistance, et atténue fortement les variations de la valeur de la résistance en fonction du temps ou de la tension appliquée. Application aux circuits intégrés linéaires.The invention relates to the manufacture of integrated circuits. A resistance of high value, produced by ion implantation, is entirely covered by a field plate 15, formed by a conductive layer. This plate is advantageously connected to the most negative terminal of the resistor, and greatly attenuates the variations in the value of the resistance as a function of time or of the voltage applied. Application to linear integrated circuits.

FR7901622A 1978-01-25 1979-01-23 HIGH STABILITY INTEGRATED CIRCUIT RESISTANCE Withdrawn FR2415878A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87217378A 1978-01-25 1978-01-25

Publications (1)

Publication Number Publication Date
FR2415878A1 true FR2415878A1 (en) 1979-08-24

Family

ID=25358994

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7901622A Withdrawn FR2415878A1 (en) 1978-01-25 1979-01-23 HIGH STABILITY INTEGRATED CIRCUIT RESISTANCE

Country Status (8)

Country Link
JP (1) JPS54121083A (en)
BE (1) BE873652A (en)
DE (1) DE2902494A1 (en)
FR (1) FR2415878A1 (en)
GB (1) GB2016208A (en)
IT (1) IT7967158A0 (en)
NL (1) NL7900530A (en)
SE (1) SE7900379L (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006474A1 (en) * 1978-06-29 1980-01-09 International Business Machines Corporation Method of compensating for the voltage coefficient of ion-implanted or diffused semiconductor resistors
EP0077072A2 (en) * 1981-10-14 1983-04-20 Hitachi, Ltd. High voltage resistance element

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
WO1990005995A1 (en) * 1988-11-22 1990-05-31 Seiko Epson Corporation Semiconductor device
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US6458669B1 (en) * 2000-08-30 2002-10-01 Agere Systems Guardian Corp. Method of manufacturing an integrated circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
FR2237316A1 (en) * 1973-07-09 1975-02-07 Ibm
DE2435606A1 (en) * 1974-07-24 1976-02-05 Siemens Ag Linear integrated impedance with depletion MOSFETs - uses drawn-source series with each FET gate coupled to its drain or source
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
FR2351505A1 (en) * 1976-05-13 1977-12-09 Ibm France PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
FR2237316A1 (en) * 1973-07-09 1975-02-07 Ibm
DE2435606A1 (en) * 1974-07-24 1976-02-05 Siemens Ag Linear integrated impedance with depletion MOSFETs - uses drawn-source series with each FET gate coupled to its drain or source
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
FR2351505A1 (en) * 1976-05-13 1977-12-09 Ibm France PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006474A1 (en) * 1978-06-29 1980-01-09 International Business Machines Corporation Method of compensating for the voltage coefficient of ion-implanted or diffused semiconductor resistors
EP0077072A2 (en) * 1981-10-14 1983-04-20 Hitachi, Ltd. High voltage resistance element
EP0077072A3 (en) * 1981-10-14 1985-05-15 Hitachi, Ltd. High voltage resistance element

Also Published As

Publication number Publication date
GB2016208A (en) 1979-09-19
BE873652A (en) 1979-05-16
JPS54121083A (en) 1979-09-19
NL7900530A (en) 1979-07-27
SE7900379L (en) 1979-07-26
IT7967158A0 (en) 1979-01-24
DE2902494A1 (en) 1979-07-26

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Legal Events

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