FR2413792A1 - Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide - Google Patents

Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide

Info

Publication number
FR2413792A1
FR2413792A1 FR7739794A FR7739794A FR2413792A1 FR 2413792 A1 FR2413792 A1 FR 2413792A1 FR 7739794 A FR7739794 A FR 7739794A FR 7739794 A FR7739794 A FR 7739794A FR 2413792 A1 FR2413792 A1 FR 2413792A1
Authority
FR
France
Prior art keywords
gallium arsenide
doped gallium
type
layer
esp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739794A
Other languages
French (fr)
Other versions
FR2413792B1 (en
Inventor
Daniel Diguet
Michel Gaffre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7739794A priority Critical patent/FR2413792A1/en
Publication of FR2413792A1 publication Critical patent/FR2413792A1/en
Application granted granted Critical
Publication of FR2413792B1 publication Critical patent/FR2413792B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)

Abstract

A substrate (1) of one conductivity type (a) is provided with an epitaxial layer (a) of type (a), followed by doping the upper part of layer (2) to form an insulation layer (3) of opposite conductivity (b). Another epitaxial layer (4) is then formed of type (a), followed by applying a mask with windows so further doping can be used to form electroluminescent junctions and insulating walls in layer (4). The esp. pref. substrate (1) is GaAs covered by epitaxial layers of GaAs0.6P0.4, and the substrate (1) is pref. n-type, covered by an epitaxial n-type layer of GaAs0.6-P0.4, whereas layer (3) and the insulating walls are p-type. The electroluminescent junctions, are pref. forms by p-type islets in layer (4). The matrix and its insulating walls are easy to make in simple, appts. avoiding the complications involved with conventional processes for mfg. this type of device.
FR7739794A 1977-12-30 1977-12-30 Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide Granted FR2413792A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7739794A FR2413792A1 (en) 1977-12-30 1977-12-30 Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739794A FR2413792A1 (en) 1977-12-30 1977-12-30 Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide

Publications (2)

Publication Number Publication Date
FR2413792A1 true FR2413792A1 (en) 1979-07-27
FR2413792B1 FR2413792B1 (en) 1980-08-22

Family

ID=9199554

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739794A Granted FR2413792A1 (en) 1977-12-30 1977-12-30 Monolithic semiconductor contg. matrix of electroluminescent elements - esp, using doped gallium arsenide substrate covered by epitaxial layers of doped gallium arsenide phosphide

Country Status (1)

Country Link
FR (1) FR2413792A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0182430A1 (en) * 1984-11-23 1986-05-28 Rtc-Compelec Light-emitting diodes array and method for its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080849A6 (en) * 1970-02-06 1971-11-26 Radiotechnique Compelec

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080849A6 (en) * 1970-02-06 1971-11-26 Radiotechnique Compelec

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0182430A1 (en) * 1984-11-23 1986-05-28 Rtc-Compelec Light-emitting diodes array and method for its production
FR2573897A1 (en) * 1984-11-23 1986-05-30 Radiotechnique Compelec ELECTROLUMINESCENT DIODE DIAMOND AND METHOD FOR MANUFACTURING THE SAME

Also Published As

Publication number Publication date
FR2413792B1 (en) 1980-08-22

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