FR2409635A1 - MOS-FET DIFFERENTIAL AMPLIFIER - Google Patents

MOS-FET DIFFERENTIAL AMPLIFIER

Info

Publication number
FR2409635A1
FR2409635A1 FR7830777A FR7830777A FR2409635A1 FR 2409635 A1 FR2409635 A1 FR 2409635A1 FR 7830777 A FR7830777 A FR 7830777A FR 7830777 A FR7830777 A FR 7830777A FR 2409635 A1 FR2409635 A1 FR 2409635A1
Authority
FR
France
Prior art keywords
mos
differential amplifier
fet differential
amplifier
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7830777A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2409635A1 publication Critical patent/FR2409635A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

A.AMPLIFICATEUR DIFFERENTIEL MOS-FET COMPOSE DE DEUX TRANSISTORS A EFFET DE CHAMP. B.AMPLIFICATEUR CARACTERISE EN CE QUE LE CIRCUIT DE PROTECTION A DIODES SE COMPOSE DE DEUX DIODES ZENER D11, D12 BRANCHEES EN SERIE ET AVEC DES POLARITES OPPOSEES ENTRE LES ELECTRODES DE PORTE DES DEUX TRANSISTORS A EFFET DE CHAMP T11, T12, CES DEUX DIODES ETANT RELIEES PAR LA BRANCHE DE REACTION ET PAR UNE RESISTANCE R13 DANS LE CIRCUIT D'EMETTEUR DU TRANSISTOR AMPLIFICATEUR T13, SUR LE SUBSTRAT.A. MOS-FET DIFFERENTIAL AMPLIFIER CONSISTS OF TWO FIELD EFFECT TRANSISTORS. B. AMPLIFIER CHARACTERIZED IN THAT THE DIODE PROTECTION CIRCUIT CONSISTS OF TWO ZENER DIODES D11, D12 CONNECTED IN SERIES AND WITH OPPOSED POLARITIES BETWEEN THE DOOR ELECTRODES OF THE TWO FIELD-EFFECT TRANSISTORS T11, T12, THESE TWO DIODES BEING CONNECTED BY THE REACTION BRANCH AND BY AN R13 RESISTOR IN THE TRANSISTOR AMPLIFIER T13 TRANSISTOR CIRCUIT, ON THE SUBSTRATE.

FR7830777A 1977-11-16 1978-10-30 MOS-FET DIFFERENTIAL AMPLIFIER Pending FR2409635A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772751289 DE2751289A1 (en) 1977-11-16 1977-11-16 MOS-FET DIFFERENCE AMPLIFIER

Publications (1)

Publication Number Publication Date
FR2409635A1 true FR2409635A1 (en) 1979-06-15

Family

ID=6023914

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7830777A Pending FR2409635A1 (en) 1977-11-16 1978-10-30 MOS-FET DIFFERENTIAL AMPLIFIER

Country Status (9)

Country Link
BE (1) BE872060A (en)
DE (1) DE2751289A1 (en)
DK (1) DK507678A (en)
FR (1) FR2409635A1 (en)
GB (1) GB2008357A (en)
IT (1) IT1100235B (en)
LU (1) LU80517A1 (en)
NL (1) NL7811249A (en)
SE (1) SE7811747L (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334949A (en) * 1992-02-27 1994-08-02 Nec Corporation Differential amplifiers
US6400541B1 (en) * 1999-10-27 2002-06-04 Analog Devices, Inc. Circuit for protection of differential inputs against electrostatic discharge
US7026839B1 (en) 2003-06-26 2006-04-11 Marvell International Ltd. Circuits, architectures, systems and methods for overvoltage protection
CN112993953B (en) * 2021-02-26 2023-06-06 西安微电子技术研究所 High-voltage surge suppression circuit
CN113659934B (en) * 2021-07-27 2023-04-25 电子科技大学 Distributed low noise amplifier based on negative feedback matching network

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2505573A1 (en) * 1974-02-11 1975-08-14 Rca Corp DIODE PROTECTION CIRCUIT FOR MOS SEMICONDUCTOR COMPONENTS
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2505573A1 (en) * 1974-02-11 1975-08-14 Rca Corp DIODE PROTECTION CIRCUIT FOR MOS SEMICONDUCTOR COMPONENTS
US4044313A (en) * 1976-12-01 1977-08-23 Rca Corporation Protective network for an insulated-gate field-effect (IGFET) differential amplifier

Also Published As

Publication number Publication date
SE7811747L (en) 1979-05-17
IT7829787A0 (en) 1978-11-15
NL7811249A (en) 1979-05-18
IT1100235B (en) 1985-09-28
GB2008357A (en) 1979-05-31
LU80517A1 (en) 1979-06-15
DE2751289A1 (en) 1979-05-17
DK507678A (en) 1979-05-17
BE872060A (en) 1979-05-16

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