FR2390011A1 - - Google Patents
Info
- Publication number
- FR2390011A1 FR2390011A1 FR7812629A FR7812629A FR2390011A1 FR 2390011 A1 FR2390011 A1 FR 2390011A1 FR 7812629 A FR7812629 A FR 7812629A FR 7812629 A FR7812629 A FR 7812629A FR 2390011 A1 FR2390011 A1 FR 2390011A1
- Authority
- FR
- France
- Prior art keywords
- zone
- connection
- strip
- network
- voltages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
L'invention concerne un réseau résistif d'un circuit intégré monolithique à au moins deux tensions. Elle est caractérisée par le fait que le réseau est constitué par une unique zone diffusée dans le substrat en une zone principale en forme de bande avec à ses extrémités deux surfaces de contact pour le branchement avec une source de tension, et des résistances en dérivation identifiées par une zone secondaire en forme de bande perpendiculaire comportant une surface de contact servant au branchement sur l'une des bornes à impédance élevée d'entrée. L'invention s'applique en électronique.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT23145/77A IT1115654B (it) | 1977-05-04 | 1977-05-04 | Partitore di tensione diffuso per circuito integrato monolitico |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2390011A1 true FR2390011A1 (fr) | 1978-12-01 |
FR2390011B1 FR2390011B1 (fr) | 1982-05-21 |
Family
ID=11204252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7812629A Expired FR2390011B1 (fr) | 1977-05-04 | 1978-04-28 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4181878A (fr) |
FR (1) | FR2390011B1 (fr) |
IT (1) | IT1115654B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016605A1 (fr) * | 1979-03-19 | 1980-10-01 | National Semiconductor Corporation | Echelle de résistances à circuit intégré |
EP0109996A1 (fr) * | 1982-11-26 | 1984-06-13 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1096633B (it) * | 1978-06-13 | 1985-08-26 | Ates Componenti Elettron | Resistore diffuso in un corpo semiconduttore |
JPS57100755A (en) * | 1980-12-15 | 1982-06-23 | Fujitsu Ltd | Semiconductor device |
US4447747A (en) * | 1981-03-02 | 1984-05-08 | Gte Laboratories Incorporated | Waveform generating apparatus |
US4649417A (en) * | 1983-09-22 | 1987-03-10 | International Business Machines Corporation | Multiple voltage integrated circuit packaging substrate |
FR2596922B1 (fr) * | 1986-04-04 | 1988-05-20 | Thomson Csf | Resistance integree sur un substrat semi-conducteur |
US4839633A (en) * | 1987-06-24 | 1989-06-13 | Texas Instruments Incorporated | Asymmetric voltage monitor for series supplies |
US4968901A (en) * | 1989-05-16 | 1990-11-06 | Burr-Brown Corporation | Integrated circuit high frequency input attenuator circuit |
JP3049843B2 (ja) * | 1991-04-26 | 2000-06-05 | 株式会社デンソー | 抵抗体電極構造の形成方法 |
US5506494A (en) * | 1991-04-26 | 1996-04-09 | Nippondenso Co., Ltd. | Resistor circuit with reduced temperature coefficient of resistance |
US5268651A (en) * | 1991-09-23 | 1993-12-07 | Crystal Semiconductor Corporation | Low drift resistor structure |
DE4217408C1 (de) * | 1992-05-26 | 1993-11-25 | Texas Instruments Deutschland | Integrierter Spannungsteiler |
US5339067A (en) * | 1993-05-07 | 1994-08-16 | Crystal Semiconductor Corporation | Integrated voltage divider and circuit employing an integrated voltage divider |
DE19601135C1 (de) * | 1996-01-13 | 1997-05-28 | Itt Ind Gmbh Deutsche | Halbleiterstruktur |
DE10213876C1 (de) * | 2002-03-27 | 2003-10-02 | Siemens Ag | Anordnung zur Messung von Hochspannung |
US7737817B2 (en) * | 2002-06-11 | 2010-06-15 | Nxp B.V. | Resistor network such as a resistor ladder network and a method for manufacturing such a resistor network |
WO2007122561A2 (fr) * | 2006-04-21 | 2007-11-01 | Nxp B.V. | Circuit diviseur resistif |
JP5072068B2 (ja) * | 2006-12-25 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 抵抗分割回路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6907227A (fr) * | 1969-05-10 | 1970-11-12 | ||
JPS5220317B2 (fr) * | 1974-12-25 | 1977-06-02 |
-
1977
- 1977-05-04 IT IT23145/77A patent/IT1115654B/it active
-
1978
- 1978-04-28 FR FR7812629A patent/FR2390011B1/fr not_active Expired
- 1978-05-03 US US05/902,282 patent/US4181878A/en not_active Expired - Lifetime
Non-Patent Citations (2)
Title |
---|
NV205/71 * |
NV700/73 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016605A1 (fr) * | 1979-03-19 | 1980-10-01 | National Semiconductor Corporation | Echelle de résistances à circuit intégré |
EP0109996A1 (fr) * | 1982-11-26 | 1984-06-13 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
Also Published As
Publication number | Publication date |
---|---|
DE2819149A1 (de) | 1978-11-09 |
DE2819149C2 (de) | 1983-01-27 |
US4181878A (en) | 1980-01-01 |
FR2390011B1 (fr) | 1982-05-21 |
IT1115654B (it) | 1986-02-03 |
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