FR2377706B1 - - Google Patents

Info

Publication number
FR2377706B1
FR2377706B1 FR7700739A FR7700739A FR2377706B1 FR 2377706 B1 FR2377706 B1 FR 2377706B1 FR 7700739 A FR7700739 A FR 7700739A FR 7700739 A FR7700739 A FR 7700739A FR 2377706 B1 FR2377706 B1 FR 2377706B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7700739A
Other languages
French (fr)
Other versions
FR2377706A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7700739A priority Critical patent/FR2377706A1/en
Publication of FR2377706A1 publication Critical patent/FR2377706A1/en
Application granted granted Critical
Publication of FR2377706B1 publication Critical patent/FR2377706B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7700739A 1977-01-12 1977-01-12 Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones Granted FR2377706A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (en) 1977-01-12 1977-01-12 Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700739A FR2377706A1 (en) 1977-01-12 1977-01-12 Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones

Publications (2)

Publication Number Publication Date
FR2377706A1 FR2377706A1 (en) 1978-08-11
FR2377706B1 true FR2377706B1 (en) 1981-05-29

Family

ID=9185392

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7700739A Granted FR2377706A1 (en) 1977-01-12 1977-01-12 Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones

Country Status (1)

Country Link
FR (1) FR2377706A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (en) * 1979-02-14 1980-09-12 Radiotechnique Compelec IMPROVEMENT ON DARLINGTON SEMICONDUCTOR DEVICES
FR2458146A1 (en) * 1979-05-29 1980-12-26 Thomson Csf INTEGRATED STRUCTURE COMPRISING A TRANSISTOR AND THREE ANTISATURATION DIODES
FR2458904A1 (en) * 1979-06-12 1981-01-02 Thomson Csf MONOLITHIC INTEGRATED CIRCUIT EQUIVALENT TO A TRANSISTOR ASSOCIATED WITH THREE ANTI-SATURATION DIODES
IT1230025B (en) * 1988-10-28 1991-09-24 Sgs Thomson Microelectronics DARLINGTON DEVICE WITH EXTRACTION TRANSISTOR AND ULTRALIGHT EMITTER AND RELATED MANUFACTURING PROCEDURE
DE59209867D1 (en) * 1991-04-16 2000-11-02 Siemens Ag Free-wheeling transistor circuit

Also Published As

Publication number Publication date
FR2377706A1 (en) 1978-08-11

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Legal Events

Date Code Title Description
ST Notification of lapse