FR2369653A1 - Reseau de memoire a condensateurs - Google Patents
Reseau de memoire a condensateursInfo
- Publication number
- FR2369653A1 FR2369653A1 FR7732700A FR7732700A FR2369653A1 FR 2369653 A1 FR2369653 A1 FR 2369653A1 FR 7732700 A FR7732700 A FR 7732700A FR 7732700 A FR7732700 A FR 7732700A FR 2369653 A1 FR2369653 A1 FR 2369653A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- memory network
- capacitor memory
- memory
- accelerates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title abstract 3
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/14—Subject matter not provided for in other groups of this subclass comprising memory cells that only have passive resistors or passive capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
L'invention concerne les mémoires à semi-conducteur. Une mémoire à semi-conducteur est constituée par un réseau de condensateurs 10a, 10b,... du type métal-nitrure-oxydesemi-conducteur. Le substrat de cette structure est dopé de façon à faire apparaître un claquage par avalanche sous une tension relativement faible, ce qui accélère la vitesse d'écriture de la mémoire. Application aux mémoires vives à semi-conducteur.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73716576A | 1976-10-29 | 1976-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2369653A1 true FR2369653A1 (fr) | 1978-05-26 |
FR2369653B1 FR2369653B1 (fr) | 1984-10-05 |
Family
ID=24962835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7732700A Granted FR2369653A1 (fr) | 1976-10-29 | 1977-10-28 | Reseau de memoire a condensateurs |
Country Status (5)
Country | Link |
---|---|
US (1) | US4127900A (fr) |
JP (1) | JPS5391539A (fr) |
DE (1) | DE2748222A1 (fr) |
FR (1) | FR2369653A1 (fr) |
GB (3) | GB1595909A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4384299A (en) * | 1976-10-29 | 1983-05-17 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
US4242736A (en) * | 1976-10-29 | 1980-12-30 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
US4459684A (en) * | 1981-06-02 | 1984-07-10 | Texas Instruments Incorporated | Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval |
US4535349A (en) * | 1981-12-31 | 1985-08-13 | International Business Machines Corporation | Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing |
US5266829A (en) * | 1986-05-09 | 1993-11-30 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US4823181A (en) * | 1986-05-09 | 1989-04-18 | Actel Corporation | Programmable low impedance anti-fuse element |
US4881114A (en) * | 1986-05-16 | 1989-11-14 | Actel Corporation | Selectively formable vertical diode circuit element |
US5609110A (en) * | 1993-10-12 | 1997-03-11 | Meacham; Patrick E. | 2D and 3D pilot-channel arrays |
US5909049A (en) * | 1997-02-11 | 1999-06-01 | Actel Corporation | Antifuse programmed PROM cell |
DE102005004107A1 (de) * | 2005-01-28 | 2006-08-17 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit einer Anordnung nichtflüchtiger Speicherzellen und Verfahren |
US10153022B1 (en) | 2017-06-09 | 2018-12-11 | Micron Technology, Inc | Time-based access of a memory cell |
US10153021B1 (en) * | 2017-06-09 | 2018-12-11 | Micron Technology, Inc. | Time-based access of a memory cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2048020A1 (de) * | 1969-10-03 | 1971-04-22 | Western Electric Co | Halbleilergedachtnisvornchtung mit einem den Halbleiter berührenden Viel schichtisolator |
US3797000A (en) * | 1972-12-29 | 1974-03-12 | Ibm | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
US3859642A (en) * | 1973-04-05 | 1975-01-07 | Bell Telephone Labor Inc | Random access memory array of hysteresis loop capacitors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6400537A (fr) * | 1964-01-24 | 1965-07-26 | ||
US3590337A (en) * | 1968-10-14 | 1971-06-29 | Sperry Rand Corp | Plural dielectric layered electrically alterable non-destructive readout memory element |
US3911464A (en) * | 1973-05-29 | 1975-10-07 | Ibm | Nonvolatile semiconductor memory |
-
1977
- 1977-06-20 US US05/808,068 patent/US4127900A/en not_active Expired - Lifetime
- 1977-10-26 GB GB2610/80A patent/GB1595909A/en not_active Expired
- 1977-10-26 GB GB20037/80A patent/GB1595910A/en not_active Expired
- 1977-10-26 GB GB44504/77A patent/GB1595908A/en not_active Expired
- 1977-10-27 DE DE19772748222 patent/DE2748222A1/de not_active Withdrawn
- 1977-10-28 JP JP12885777A patent/JPS5391539A/ja active Pending
- 1977-10-28 FR FR7732700A patent/FR2369653A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2048020A1 (de) * | 1969-10-03 | 1971-04-22 | Western Electric Co | Halbleilergedachtnisvornchtung mit einem den Halbleiter berührenden Viel schichtisolator |
US3797000A (en) * | 1972-12-29 | 1974-03-12 | Ibm | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
US3859642A (en) * | 1973-04-05 | 1975-01-07 | Bell Telephone Labor Inc | Random access memory array of hysteresis loop capacitors |
Non-Patent Citations (1)
Title |
---|
EXBK/74 * |
Also Published As
Publication number | Publication date |
---|---|
GB1595910A (en) | 1981-08-19 |
JPS5391539A (en) | 1978-08-11 |
US4127900A (en) | 1978-11-28 |
FR2369653B1 (fr) | 1984-10-05 |
GB1595909A (en) | 1981-08-19 |
GB1595908A (en) | 1981-08-19 |
DE2748222A1 (de) | 1978-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |