FR2369653A1 - Reseau de memoire a condensateurs - Google Patents

Reseau de memoire a condensateurs

Info

Publication number
FR2369653A1
FR2369653A1 FR7732700A FR7732700A FR2369653A1 FR 2369653 A1 FR2369653 A1 FR 2369653A1 FR 7732700 A FR7732700 A FR 7732700A FR 7732700 A FR7732700 A FR 7732700A FR 2369653 A1 FR2369653 A1 FR 2369653A1
Authority
FR
France
Prior art keywords
semiconductor
memory network
capacitor memory
memory
accelerates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7732700A
Other languages
English (en)
Other versions
FR2369653B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of FR2369653A1 publication Critical patent/FR2369653A1/fr
Application granted granted Critical
Publication of FR2369653B1 publication Critical patent/FR2369653B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/14—Subject matter not provided for in other groups of this subclass comprising memory cells that only have passive resistors or passive capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne les mémoires à semi-conducteur. Une mémoire à semi-conducteur est constituée par un réseau de condensateurs 10a, 10b,... du type métal-nitrure-oxydesemi-conducteur. Le substrat de cette structure est dopé de façon à faire apparaître un claquage par avalanche sous une tension relativement faible, ce qui accélère la vitesse d'écriture de la mémoire. Application aux mémoires vives à semi-conducteur.
FR7732700A 1976-10-29 1977-10-28 Reseau de memoire a condensateurs Granted FR2369653A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73716576A 1976-10-29 1976-10-29

Publications (2)

Publication Number Publication Date
FR2369653A1 true FR2369653A1 (fr) 1978-05-26
FR2369653B1 FR2369653B1 (fr) 1984-10-05

Family

ID=24962835

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7732700A Granted FR2369653A1 (fr) 1976-10-29 1977-10-28 Reseau de memoire a condensateurs

Country Status (5)

Country Link
US (1) US4127900A (fr)
JP (1) JPS5391539A (fr)
DE (1) DE2748222A1 (fr)
FR (1) FR2369653A1 (fr)
GB (3) GB1595909A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4242736A (en) * 1976-10-29 1980-12-30 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4459684A (en) * 1981-06-02 1984-07-10 Texas Instruments Incorporated Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US5609110A (en) * 1993-10-12 1997-03-11 Meacham; Patrick E. 2D and 3D pilot-channel arrays
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
DE102005004107A1 (de) * 2005-01-28 2006-08-17 Infineon Technologies Ag Integrierter Halbleiterspeicher mit einer Anordnung nichtflüchtiger Speicherzellen und Verfahren
US10153022B1 (en) 2017-06-09 2018-12-11 Micron Technology, Inc Time-based access of a memory cell
US10153021B1 (en) * 2017-06-09 2018-12-11 Micron Technology, Inc. Time-based access of a memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048020A1 (de) * 1969-10-03 1971-04-22 Western Electric Co Halbleilergedachtnisvornchtung mit einem den Halbleiter berührenden Viel schichtisolator
US3797000A (en) * 1972-12-29 1974-03-12 Ibm Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3859642A (en) * 1973-04-05 1975-01-07 Bell Telephone Labor Inc Random access memory array of hysteresis loop capacitors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6400537A (fr) * 1964-01-24 1965-07-26
US3590337A (en) * 1968-10-14 1971-06-29 Sperry Rand Corp Plural dielectric layered electrically alterable non-destructive readout memory element
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2048020A1 (de) * 1969-10-03 1971-04-22 Western Electric Co Halbleilergedachtnisvornchtung mit einem den Halbleiter berührenden Viel schichtisolator
US3797000A (en) * 1972-12-29 1974-03-12 Ibm Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3859642A (en) * 1973-04-05 1975-01-07 Bell Telephone Labor Inc Random access memory array of hysteresis loop capacitors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *

Also Published As

Publication number Publication date
GB1595910A (en) 1981-08-19
JPS5391539A (en) 1978-08-11
US4127900A (en) 1978-11-28
FR2369653B1 (fr) 1984-10-05
GB1595909A (en) 1981-08-19
GB1595908A (en) 1981-08-19
DE2748222A1 (de) 1978-05-11

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