FR2362491A1 - Composant a semi-conducteurs a deux diodes partielles croisees et a proprietes analogues a celles d'un transistor - Google Patents

Composant a semi-conducteurs a deux diodes partielles croisees et a proprietes analogues a celles d'un transistor

Info

Publication number
FR2362491A1
FR2362491A1 FR7724026A FR7724026A FR2362491A1 FR 2362491 A1 FR2362491 A1 FR 2362491A1 FR 7724026 A FR7724026 A FR 7724026A FR 7724026 A FR7724026 A FR 7724026A FR 2362491 A1 FR2362491 A1 FR 2362491A1
Authority
FR
France
Prior art keywords
transistor
those
semiconductor component
properties similar
partial diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724026A
Other languages
English (en)
Other versions
FR2362491B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2362491A1 publication Critical patent/FR2362491A1/fr
Application granted granted Critical
Publication of FR2362491B1 publication Critical patent/FR2362491B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/705—Double base diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)

Abstract

a. L'invention concerne un composant à semi-conducteurs ayant des propriétés analogues à celles d'un transistor. b. Ce composant est constitué par un substrat semi-conducteur dans lequel est réalisée une première diode p-i-n. Dans le substrat semi-conducteur sont prévues d'autres régions dopées en p et dopées en n, et disposées de telle manière que les diodes formées par les régions dopées en p et en n sont disposées transversalement à la première diode et croisent cette dernière. c. Application d'un tel composant à semi-conducteurs dans des circuits électriques, à la place de transistors.
FR7724026A 1976-08-17 1977-08-04 Composant a semi-conducteurs a deux diodes partielles croisees et a proprietes analogues a celles d'un transistor Granted FR2362491A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762636873 DE2636873A1 (de) 1976-08-17 1976-08-17 Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften

Publications (2)

Publication Number Publication Date
FR2362491A1 true FR2362491A1 (fr) 1978-03-17
FR2362491B1 FR2362491B1 (fr) 1980-02-01

Family

ID=5985584

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724026A Granted FR2362491A1 (fr) 1976-08-17 1977-08-04 Composant a semi-conducteurs a deux diodes partielles croisees et a proprietes analogues a celles d'un transistor

Country Status (7)

Country Link
US (1) US4182965A (fr)
JP (1) JPS5324275A (fr)
BE (1) BE857863A (fr)
DE (1) DE2636873A1 (fr)
FR (1) FR2362491A1 (fr)
IT (1) IT1085436B (fr)
NL (1) NL7709036A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2849538A1 (fr) * 2002-12-27 2004-07-02 St Microelectronics Sa Composant discret comprenant des diodes hf en serie et a cathode commune

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
JPS62105478A (ja) * 1985-11-01 1987-05-15 新技術開発事業団 半導体装置
JPH0348255U (fr) * 1989-09-14 1991-05-08
US6822267B1 (en) 1997-08-20 2004-11-23 Advantest Corporation Signal transmission circuit, CMOS semiconductor device, and circuit board
US10615176B2 (en) 2017-11-22 2020-04-07 International Business Machine Corporation Ferro-electric complementary FET

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280435A (fr) * 1962-07-02
US3731123A (en) * 1968-11-05 1973-05-01 Sony Corp Magnetic field detecting apparatus
US3686684A (en) * 1969-05-28 1972-08-22 Sony Corp Semiconductor circuits
JPS501635B1 (fr) * 1969-10-06 1975-01-20
US3840888A (en) * 1969-12-30 1974-10-08 Ibm Complementary mosfet device structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2849538A1 (fr) * 2002-12-27 2004-07-02 St Microelectronics Sa Composant discret comprenant des diodes hf en serie et a cathode commune

Also Published As

Publication number Publication date
FR2362491B1 (fr) 1980-02-01
NL7709036A (nl) 1978-02-21
DE2636873A1 (de) 1978-02-23
IT1085436B (it) 1985-05-28
US4182965A (en) 1980-01-08
JPS5324275A (en) 1978-03-06
BE857863A (fr) 1977-12-16

Similar Documents

Publication Publication Date Title
KR850002178A (ko) 광검출 집적회로 소자
FR2362491A1 (fr) Composant a semi-conducteurs a deux diodes partielles croisees et a proprietes analogues a celles d'un transistor
FR2693032A1 (fr) Structure de diodes de protection de plot.
EP0562982B1 (fr) Circuit intégré constituant un réseau de diodes de protection
KR950007086A (ko) 반도체장치
KR900004039A (ko) 복합 mos 트랜지스터 및 그의 프리휠 다이오드로의 응용
FR2404308A1 (fr) Arrangement de diodes emettrices de lumiere multicolores
GB1412052A (en) Semoconductor structure including an integrated circuit
KR920010888A (ko) 입력보호회로를 갖춘 반도체 장치
KR910017670A (ko) 반도체 집적회로
FR2363196A1 (fr) Dispositif semi-conducteur a haute tension
KR920005297A (ko) 반도체집적회로 장치
GB1261067A (en) Improvements in and relating to methods of manufacturing semiconductor devices
GB1152708A (en) Improvements in or relating to Semiconductor Devices.
KR910003805A (ko) 다이오드로 구성되는 vdmos/논리 집적회로
FR2399711A1 (fr) Cellule de memoire a acces direct
KR900701046A (ko) 상보형 mos 회로기술을 이용한 래치업 방지회로를 가진 집적회로
FR2688942A1 (fr) Diode a avalanche enterree.
GB899919A (en) Improvements in semi-conductive devices
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
JPS6050062B2 (ja) 半導体集積回路装置
KR910010752A (ko) 고속 댐퍼 다이오드 및 방법
GB1232946A (fr)
KR0141963B1 (ko) 씨모스 아이씨의 공급전원 보호회로
JPS6420651A (en) Semiconductor output buffer device

Legal Events

Date Code Title Description
ST Notification of lapse