FR2348574A1 - Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes - Google Patents
Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondesInfo
- Publication number
- FR2348574A1 FR2348574A1 FR7611442A FR7611442A FR2348574A1 FR 2348574 A1 FR2348574 A1 FR 2348574A1 FR 7611442 A FR7611442 A FR 7611442A FR 7611442 A FR7611442 A FR 7611442A FR 2348574 A1 FR2348574 A1 FR 2348574A1
- Authority
- FR
- France
- Prior art keywords
- source
- adapting
- making
- transmission
- wave guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Waveguide Connection Structure (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7611442A FR2348574A1 (fr) | 1976-04-16 | 1976-04-16 | Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes |
GB15412/77A GB1536812A (en) | 1976-04-16 | 1977-04-13 | Method of creating a millimetre wave source and of adapting such a source to waveguide transmission |
US05/787,058 US4102037A (en) | 1976-04-16 | 1977-04-13 | Method of creating a millimeter wave source and of adapting such a source to waveguide transmission |
DE19772716753 DE2716753A1 (de) | 1976-04-16 | 1977-04-15 | Verfahren zur herstellung einer millimeterwellenquelle und vorrichtung zur anpassung derselben an einen wellenleiter |
JP52043401A JPS5811123B2 (ja) | 1976-04-16 | 1977-04-15 | ミリメ−トル波発振器およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7611442A FR2348574A1 (fr) | 1976-04-16 | 1976-04-16 | Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2348574A1 true FR2348574A1 (fr) | 1977-11-10 |
FR2348574B1 FR2348574B1 (fr) | 1978-08-25 |
Family
ID=9171987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7611442A Granted FR2348574A1 (fr) | 1976-04-16 | 1976-04-16 | Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes |
Country Status (5)
Country | Link |
---|---|
US (1) | US4102037A (fr) |
JP (1) | JPS5811123B2 (fr) |
DE (1) | DE2716753A1 (fr) |
FR (1) | FR2348574A1 (fr) |
GB (1) | GB1536812A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2420208A1 (fr) * | 1978-03-17 | 1979-10-12 | Thomson Csf | Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee |
EP0005096A1 (fr) * | 1978-04-14 | 1979-10-31 | Thomson-Csf | Source d'ondes millimétriques |
FR2769130A1 (fr) * | 1997-09-30 | 1999-04-02 | Thomson Csf | Procede d'enrobage d'une puce electronique et carte electronique comportant au moins une puce enrobee selon ce procede |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2421478A2 (fr) * | 1978-03-31 | 1979-10-26 | Thomson Csf | Source d'ondes millimetriques a l'etat solide comportant un aerien directif |
US4279070A (en) * | 1980-03-04 | 1981-07-21 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making integrated waveguide cavities |
JPS6117303U (ja) * | 1984-07-09 | 1986-01-31 | 日産自動車株式会社 | 車両用ホイ−ルの取付構造 |
JP2516301B2 (ja) * | 1991-06-13 | 1996-07-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | テ―プ駆動装置 |
US6777684B1 (en) | 1999-08-23 | 2004-08-17 | Rose Research L.L.C. | Systems and methods for millimeter and sub-millimeter wave imaging |
US7498120B2 (en) * | 2004-09-15 | 2009-03-03 | Innosys, Inc. | Vacuum compatible high frequency electromagnetic and millimeter wave source components, devices and methods of micro-fabricating |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2100997B1 (fr) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
US3689357A (en) * | 1970-12-10 | 1972-09-05 | Gen Motors Corp | Glass-polysilicon dielectric isolation |
DE2323438C3 (de) * | 1973-05-09 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Halbleiterbauelementes |
IT1041193B (it) * | 1975-08-08 | 1980-01-10 | Selenia Ind Elettroniche | Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor |
-
1976
- 1976-04-16 FR FR7611442A patent/FR2348574A1/fr active Granted
-
1977
- 1977-04-13 GB GB15412/77A patent/GB1536812A/en not_active Expired
- 1977-04-13 US US05/787,058 patent/US4102037A/en not_active Expired - Lifetime
- 1977-04-15 JP JP52043401A patent/JPS5811123B2/ja not_active Expired
- 1977-04-15 DE DE19772716753 patent/DE2716753A1/de not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2420208A1 (fr) * | 1978-03-17 | 1979-10-12 | Thomson Csf | Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee |
EP0005096A1 (fr) * | 1978-04-14 | 1979-10-31 | Thomson-Csf | Source d'ondes millimétriques |
FR2769130A1 (fr) * | 1997-09-30 | 1999-04-02 | Thomson Csf | Procede d'enrobage d'une puce electronique et carte electronique comportant au moins une puce enrobee selon ce procede |
WO1999017367A1 (fr) * | 1997-09-30 | 1999-04-08 | Thomson-Csf | Procede d'enrobage d'une puce electronique et carte electronique comportant au moins un puce enrobee selon ce procede |
Also Published As
Publication number | Publication date |
---|---|
JPS5811123B2 (ja) | 1983-03-01 |
GB1536812A (en) | 1978-12-20 |
FR2348574B1 (fr) | 1978-08-25 |
JPS52127146A (en) | 1977-10-25 |
DE2716753A1 (de) | 1977-11-03 |
US4102037A (en) | 1978-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences | ||
ST | Notification of lapse |