FR2345816A1 - Procede et composition destines a former un film contenant du sulfure de cadmium - Google Patents

Procede et composition destines a former un film contenant du sulfure de cadmium

Info

Publication number
FR2345816A1
FR2345816A1 FR7709068A FR7709068A FR2345816A1 FR 2345816 A1 FR2345816 A1 FR 2345816A1 FR 7709068 A FR7709068 A FR 7709068A FR 7709068 A FR7709068 A FR 7709068A FR 2345816 A1 FR2345816 A1 FR 2345816A1
Authority
FR
France
Prior art keywords
composition
forming
film containing
cadmium sulphide
containing cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7709068A
Other languages
English (en)
Other versions
FR2345816B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photon Power Inc
Original Assignee
Photon Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photon Power Inc filed Critical Photon Power Inc
Publication of FR2345816A1 publication Critical patent/FR2345816A1/fr
Application granted granted Critical
Publication of FR2345816B1 publication Critical patent/FR2345816B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Lubricants (AREA)
FR7709068A 1976-03-26 1977-03-25 Procede et composition destines a former un film contenant du sulfure de cadmium Granted FR2345816A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/670,625 US4095006A (en) 1976-03-26 1976-03-26 Cadmium sulfide film

Publications (2)

Publication Number Publication Date
FR2345816A1 true FR2345816A1 (fr) 1977-10-21
FR2345816B1 FR2345816B1 (fr) 1981-01-09

Family

ID=24691156

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709068A Granted FR2345816A1 (fr) 1976-03-26 1977-03-25 Procede et composition destines a former un film contenant du sulfure de cadmium

Country Status (6)

Country Link
US (1) US4095006A (fr)
BR (1) BR7701829A (fr)
DE (1) DE2713097C2 (fr)
FR (1) FR2345816A1 (fr)
GB (1) GB1567510A (fr)
MX (1) MX147609A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482322A1 (fr) * 1980-05-08 1981-11-13 Savin Corp Organe photoconducteur pour procede electrophotographique

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224355A (en) * 1978-03-15 1980-09-23 Photon Power, Inc. Method for quality film formation
US4304607A (en) * 1978-03-31 1981-12-08 Photon Power, Inc. Photovoltaic cell
US4234353A (en) * 1979-04-09 1980-11-18 Chevron Research Company Process for preparing photovoltaic cells having increased adhesion of the semi-conducting layer and produced thereby to the conducting layer
US4242374A (en) * 1979-04-19 1980-12-30 Exxon Research & Engineering Co. Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties
US4502917A (en) * 1980-09-15 1985-03-05 Cherry Electrical Products Corporation Process for forming patterned films
US4344817A (en) * 1980-09-15 1982-08-17 Photon Power, Inc. Process for forming tin oxide conductive pattern
US4447335A (en) * 1981-03-31 1984-05-08 Argus Chemical Corporation Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein
DE3206347A1 (de) * 1982-02-22 1983-09-01 Standard Elektrik Lorenz Ag, 7000 Stuttgart Verfahren zur herstellung von cds-schichten fuer solarzellen
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
AT503837B1 (de) * 2006-06-22 2009-01-15 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8084682B2 (en) * 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell
US8906732B2 (en) * 2010-10-01 2014-12-09 Stion Corporation Method and device for cadmium-free solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB971017A (en) * 1961-08-30 1964-09-23 Ncr Co Process for making thin semi-conductive films
US3530053A (en) * 1968-01-11 1970-09-22 Bell Telephone Labor Inc Method of preparing a cadmium sulfide thin film from an aqueous solution

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980500A (en) * 1958-04-25 1961-04-18 Monsanto Chemicals Method for the preparation of semiconductor cadmium compounds
US3592643A (en) * 1968-08-15 1971-07-13 Gen Electric Photoconductive cadmium sulfide composition and process of preparing
US3852404A (en) * 1972-10-24 1974-12-03 Hercules Inc Preparation of crystalline sulfides and selenides of cadmium zinc and mercury
US3880633A (en) * 1974-01-08 1975-04-29 Baldwin Co D H Method of coating a glass ribbon on a liquid float bath

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB971017A (en) * 1961-08-30 1964-09-23 Ncr Co Process for making thin semi-conductive films
US3530053A (en) * 1968-01-11 1970-09-22 Bell Telephone Labor Inc Method of preparing a cadmium sulfide thin film from an aqueous solution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482322A1 (fr) * 1980-05-08 1981-11-13 Savin Corp Organe photoconducteur pour procede electrophotographique

Also Published As

Publication number Publication date
MX147609A (es) 1983-01-03
US4095006A (en) 1978-06-13
DE2713097C2 (de) 1984-08-30
DE2713097A1 (de) 1977-11-03
FR2345816B1 (fr) 1981-01-09
GB1567510A (en) 1980-05-14
BR7701829A (pt) 1977-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse