FR2345810A1 - IMPROVEMENTS TO PHOTOVOLTAIC DEVICES AND CURRENT RECTIFIER DEVICES - Google Patents
IMPROVEMENTS TO PHOTOVOLTAIC DEVICES AND CURRENT RECTIFIER DEVICESInfo
- Publication number
- FR2345810A1 FR2345810A1 FR7708346A FR7708346A FR2345810A1 FR 2345810 A1 FR2345810 A1 FR 2345810A1 FR 7708346 A FR7708346 A FR 7708346A FR 7708346 A FR7708346 A FR 7708346A FR 2345810 A1 FR2345810 A1 FR 2345810A1
- Authority
- FR
- France
- Prior art keywords
- devices
- current rectifier
- photovoltaic
- photovoltaic devices
- rectifier devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02474—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66890876A | 1976-03-22 | 1976-03-22 | |
US05/710,186 US4142195A (en) | 1976-03-22 | 1976-07-30 | Schottky barrier semiconductor device and method of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2345810A1 true FR2345810A1 (en) | 1977-10-21 |
FR2345810B1 FR2345810B1 (en) | 1982-04-09 |
Family
ID=27100017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7708346A Granted FR2345810A1 (en) | 1976-03-22 | 1977-03-21 | IMPROVEMENTS TO PHOTOVOLTAIC DEVICES AND CURRENT RECTIFIER DEVICES |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS52122471A (en) |
CA (1) | CA1078078A (en) |
DE (1) | DE2711365A1 (en) |
FR (1) | FR2345810A1 (en) |
GB (1) | GB1572846A (en) |
HK (1) | HK72084A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2432765A1 (en) * | 1978-03-16 | 1980-02-29 | Energy Conversion Devices Inc | METHOD FOR MANUFACTURING SEMICONDUCTOR FILM AND SEMICONDUCTOR FILM USING THE SAME |
EP0008406A1 (en) * | 1978-08-23 | 1980-03-05 | Siemens Aktiengesellschaft | Method for producing a passivating layer on a silicon semiconductor body |
FR2451637A1 (en) * | 1979-03-12 | 1980-10-10 | Rca Corp | AMORPHOUS SILICON SOLAR CELL |
FR2452072A1 (en) * | 1979-03-20 | 1980-10-17 | Sanyo Electric Co | DEVICE FOR TRANSFORMING SOLAR ENERGY INTO ANOTHER FORM OF ENERGY |
FR2454182A1 (en) * | 1979-02-05 | 1980-11-07 | Siemens Ag | PROCESS FOR MANUFACTURING SEMICONDUCTOR BODIES CONSTITUTED BY AMORPHOUS SILICON, USING DISCHARGE DISCHARGE |
FR2454186A1 (en) * | 1977-10-12 | 1980-11-07 | Energy Conversion Devices Inc | AMORPHOUS SEMICONDUCTORS AND PROCESS FOR THEIR PREPARATION |
FR2462782A1 (en) * | 1979-08-03 | 1981-02-13 | Thomson Csf | PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME |
FR2463508A1 (en) * | 1979-08-16 | 1981-02-20 | Anvar | Ohmic contact mfr. on hydrogenated amorphous silicon - using intermediate layer starved of hydrogen |
EP0029379A1 (en) * | 1979-11-15 | 1981-05-27 | Thomson-Csf | X or gamma rays detector, especially for radiology; X ray apparatus comprising such a detector |
FR2487535A1 (en) * | 1977-12-22 | 1982-01-29 | Canon Kk | |
EP0060699A2 (en) * | 1981-03-13 | 1982-09-22 | Hitachi, Ltd. | Method of manufacturing photosensors |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2394173A1 (en) * | 1977-06-06 | 1979-01-05 | Thomson Csf | METHOD OF MANUFACTURING ELECTRONIC DEVICES WHICH INCLUDE A THIN LAYER OF AMORPHIC SILICON AND AN ELECTRONIC DEVICE OBTAINED BY SUCH A PROCESS |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
JPS54145537A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Preparation of electrophotographic image forming material |
US4226643A (en) * | 1979-07-16 | 1980-10-07 | Rca Corporation | Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film |
JPS5728368A (en) * | 1980-07-28 | 1982-02-16 | Hitachi Ltd | Manufacture of semiconductor film |
JPS604273A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
JPS604274A (en) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | Photoelectric conversion member |
JPS6088955A (en) * | 1983-10-21 | 1985-05-18 | Stanley Electric Co Ltd | Plasma cvd device |
JPS62142374A (en) * | 1986-11-29 | 1987-06-25 | Shunpei Yamazaki | Manufacture of photoelectric conversion semiconductor device |
JP2704569B2 (en) * | 1991-06-28 | 1998-01-26 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
JPH077168A (en) * | 1994-04-15 | 1995-01-10 | Semiconductor Energy Lab Co Ltd | Photoeletcric conversion semiconductor device |
-
1977
- 1977-03-03 CA CA273,141A patent/CA1078078A/en not_active Expired
- 1977-03-16 JP JP2974177A patent/JPS52122471A/en active Granted
- 1977-03-16 DE DE19772711365 patent/DE2711365A1/en active Granted
- 1977-03-17 GB GB11328/77A patent/GB1572846A/en not_active Expired
- 1977-03-21 FR FR7708346A patent/FR2345810A1/en active Granted
-
1984
- 1984-09-20 HK HK720/84A patent/HK72084A/en unknown
Non-Patent Citations (1)
Title |
---|
NV320/76 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2454186A1 (en) * | 1977-10-12 | 1980-11-07 | Energy Conversion Devices Inc | AMORPHOUS SEMICONDUCTORS AND PROCESS FOR THEIR PREPARATION |
FR2487535A1 (en) * | 1977-12-22 | 1982-01-29 | Canon Kk | |
FR2432765A1 (en) * | 1978-03-16 | 1980-02-29 | Energy Conversion Devices Inc | METHOD FOR MANUFACTURING SEMICONDUCTOR FILM AND SEMICONDUCTOR FILM USING THE SAME |
EP0008406A1 (en) * | 1978-08-23 | 1980-03-05 | Siemens Aktiengesellschaft | Method for producing a passivating layer on a silicon semiconductor body |
FR2454182A1 (en) * | 1979-02-05 | 1980-11-07 | Siemens Ag | PROCESS FOR MANUFACTURING SEMICONDUCTOR BODIES CONSTITUTED BY AMORPHOUS SILICON, USING DISCHARGE DISCHARGE |
FR2451637A1 (en) * | 1979-03-12 | 1980-10-10 | Rca Corp | AMORPHOUS SILICON SOLAR CELL |
FR2452072A1 (en) * | 1979-03-20 | 1980-10-17 | Sanyo Electric Co | DEVICE FOR TRANSFORMING SOLAR ENERGY INTO ANOTHER FORM OF ENERGY |
FR2462782A1 (en) * | 1979-08-03 | 1981-02-13 | Thomson Csf | PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME |
EP0024378A1 (en) * | 1979-08-03 | 1981-03-04 | Thomson-Csf | Method of manufacturing a layer containig silicon with an hybrid structure between an amorphous and a polycrystalline form, and solar cell containig such a layer |
FR2463508A1 (en) * | 1979-08-16 | 1981-02-20 | Anvar | Ohmic contact mfr. on hydrogenated amorphous silicon - using intermediate layer starved of hydrogen |
EP0029379A1 (en) * | 1979-11-15 | 1981-05-27 | Thomson-Csf | X or gamma rays detector, especially for radiology; X ray apparatus comprising such a detector |
EP0060699A2 (en) * | 1981-03-13 | 1982-09-22 | Hitachi, Ltd. | Method of manufacturing photosensors |
EP0060699A3 (en) * | 1981-03-13 | 1983-10-19 | Hitachi, Ltd. | Method of manufacturing photosensors |
Also Published As
Publication number | Publication date |
---|---|
CA1078078A (en) | 1980-05-20 |
GB1572846A (en) | 1980-08-06 |
JPS52122471A (en) | 1977-10-14 |
DE2711365A1 (en) | 1977-09-29 |
HK72084A (en) | 1984-09-28 |
DE2711365C2 (en) | 1988-09-01 |
FR2345810B1 (en) | 1982-04-09 |
JPS616556B2 (en) | 1986-02-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |