FR2341205A1 - MESA diode manufacture - with side passivation effected in bulk process - Google Patents

MESA diode manufacture - with side passivation effected in bulk process

Info

Publication number
FR2341205A1
FR2341205A1 FR7604080A FR7604080A FR2341205A1 FR 2341205 A1 FR2341205 A1 FR 2341205A1 FR 7604080 A FR7604080 A FR 7604080A FR 7604080 A FR7604080 A FR 7604080A FR 2341205 A1 FR2341205 A1 FR 2341205A1
Authority
FR
France
Prior art keywords
dielectric
passivating
diode
effected
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7604080A
Other languages
French (fr)
Other versions
FR2341205B1 (en
Inventor
Michel Calligaro
Claude Carriere
Raymond Henry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7604080A priority Critical patent/FR2341205A1/en
Publication of FR2341205A1 publication Critical patent/FR2341205A1/en
Application granted granted Critical
Publication of FR2341205B1 publication Critical patent/FR2341205B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Semiconductor diode esp. of the 'PIN' type, and parallele-piped shape has a thick dielectric layer covering the major part of its sides and a layer of intrinsic semiconductor material extending to the sides of the diode. The surfaces of this material are covered completely with dielectric passivating material. The diode is made by a process including (a) >=1 step in which a grid of double grooves is cut, penetrating to a depth extending through the major part of the thickness of the material, (b) one step in which the grooves are filled with passivating dielectric material and (c) one step in which the diodes are sepd. by sawing through the planes sepng the double grooves, such that each dielectric filled groove forms a passivating region surrounding the edges of the diced diodes. The mfr. of the passivated edge is effected en masse rather than individually after dicing. without forming cracks in the dielectric during subsequent oven curing or fracture when cut after curing.
FR7604080A 1976-02-13 1976-02-13 MESA diode manufacture - with side passivation effected in bulk process Granted FR2341205A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7604080A FR2341205A1 (en) 1976-02-13 1976-02-13 MESA diode manufacture - with side passivation effected in bulk process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7604080A FR2341205A1 (en) 1976-02-13 1976-02-13 MESA diode manufacture - with side passivation effected in bulk process

Publications (2)

Publication Number Publication Date
FR2341205A1 true FR2341205A1 (en) 1977-09-09
FR2341205B1 FR2341205B1 (en) 1978-08-18

Family

ID=9169108

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7604080A Granted FR2341205A1 (en) 1976-02-13 1976-02-13 MESA diode manufacture - with side passivation effected in bulk process

Country Status (1)

Country Link
FR (1) FR2341205A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4020195A1 (en) * 1989-06-27 1991-01-10 Mitsubishi Electric Corp SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF
NL1029171C2 (en) * 2005-06-02 2006-12-05 Fico Bv Device and method for processing electronic components with a double cutting radius.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4020195A1 (en) * 1989-06-27 1991-01-10 Mitsubishi Electric Corp SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF
NL1029171C2 (en) * 2005-06-02 2006-12-05 Fico Bv Device and method for processing electronic components with a double cutting radius.
WO2006135237A2 (en) * 2005-06-02 2006-12-21 Fico B.V. Device and method for processing electronic components with a double cutting flow
WO2006135237A3 (en) * 2005-06-02 2007-03-29 Fico Bv Device and method for processing electronic components with a double cutting flow

Also Published As

Publication number Publication date
FR2341205B1 (en) 1978-08-18

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