FR2336800A1 - Structure de dispositif semi-conducteur monolithique - Google Patents

Structure de dispositif semi-conducteur monolithique

Info

Publication number
FR2336800A1
FR2336800A1 FR7638070A FR7638070A FR2336800A1 FR 2336800 A1 FR2336800 A1 FR 2336800A1 FR 7638070 A FR7638070 A FR 7638070A FR 7638070 A FR7638070 A FR 7638070A FR 2336800 A1 FR2336800 A1 FR 2336800A1
Authority
FR
France
Prior art keywords
semiconductor device
device structure
monolithic semiconductor
monolithic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638070A
Other languages
English (en)
Other versions
FR2336800B1 (fr
Inventor
Armand Pasquale Ferro
Bruno Ferdinand Kurz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2336800A1 publication Critical patent/FR2336800A1/fr
Application granted granted Critical
Publication of FR2336800B1 publication Critical patent/FR2336800B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7638070A 1975-12-24 1976-12-17 Structure de dispositif semi-conducteur monolithique Granted FR2336800A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/644,338 US4047220A (en) 1975-12-24 1975-12-24 Bipolar transistor structure having low saturation resistance

Publications (2)

Publication Number Publication Date
FR2336800A1 true FR2336800A1 (fr) 1977-07-22
FR2336800B1 FR2336800B1 (fr) 1982-11-05

Family

ID=24584465

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638070A Granted FR2336800A1 (fr) 1975-12-24 1976-12-17 Structure de dispositif semi-conducteur monolithique

Country Status (8)

Country Link
US (1) US4047220A (fr)
JP (1) JPS5287376A (fr)
DE (1) DE2658090C2 (fr)
FI (1) FI66263C (fr)
FR (1) FR2336800A1 (fr)
GB (1) GB1562735A (fr)
IT (1) IT1065584B (fr)
MX (1) MX143444A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
US4152715A (en) * 1977-11-28 1979-05-01 The United States Of America As Represented By The Secretary Of The Army Silicon base CCD-bipolar transistor compatible methods and products
US4236164A (en) * 1977-12-28 1980-11-25 Bell Telephone Laboratories, Incorporated Bipolar transistor stabilization structure
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
US5001538A (en) * 1988-12-28 1991-03-19 Synergy Semiconductor Corporation Bipolar sinker structure and process for forming same
EP0665597A1 (fr) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT et son procédé de fabrication
JP3367500B2 (ja) * 2000-03-15 2003-01-14 日本電気株式会社 半導体装置
US9231403B2 (en) * 2014-03-24 2016-01-05 Texas Instruments Incorporated ESD protection circuit with plural avalanche diodes
US9312371B2 (en) * 2014-07-24 2016-04-12 Globalfoundries Inc. Bipolar junction transistors and methods of fabrication
CN111063723B (zh) * 2019-11-25 2021-12-28 深圳深爱半导体股份有限公司 开关集成控制器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377527A (en) * 1963-12-13 1968-04-09 Philips Corp Low capacity and resistance transistor structure employing a two-conductivity collector region
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
FR2103520A1 (fr) * 1970-08-26 1972-04-14 Western Electric Co
US3665266A (en) * 1970-12-10 1972-05-23 Motorola Inc Low saturation resistance,low offset voltage,monolithic analog switch
FR2144595A1 (fr) * 1971-07-07 1973-02-16 Radiotechnique Compelec
DE2607089A1 (de) * 1975-02-25 1976-09-16 Gen Electric Integrierte schaltung mit leistungstransistor- und singaltransistorbereichen

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377527A (en) * 1963-12-13 1968-04-09 Philips Corp Low capacity and resistance transistor structure employing a two-conductivity collector region
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
FR2103520A1 (fr) * 1970-08-26 1972-04-14 Western Electric Co
US3665266A (en) * 1970-12-10 1972-05-23 Motorola Inc Low saturation resistance,low offset voltage,monolithic analog switch
FR2144595A1 (fr) * 1971-07-07 1973-02-16 Radiotechnique Compelec
DE2607089A1 (de) * 1975-02-25 1976-09-16 Gen Electric Integrierte schaltung mit leistungstransistor- und singaltransistorbereichen

Also Published As

Publication number Publication date
FI66263C (fi) 1984-09-10
JPS5551346B2 (fr) 1980-12-23
IT1065584B (it) 1985-02-25
FI763629A (fr) 1977-06-25
DE2658090A1 (de) 1977-07-07
MX143444A (es) 1981-05-12
JPS5287376A (en) 1977-07-21
FR2336800B1 (fr) 1982-11-05
GB1562735A (en) 1980-03-12
FI66263B (fi) 1984-05-31
DE2658090C2 (de) 1985-12-12
US4047220A (en) 1977-09-06

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