FR2336800A1 - Structure de dispositif semi-conducteur monolithique - Google Patents
Structure de dispositif semi-conducteur monolithiqueInfo
- Publication number
- FR2336800A1 FR2336800A1 FR7638070A FR7638070A FR2336800A1 FR 2336800 A1 FR2336800 A1 FR 2336800A1 FR 7638070 A FR7638070 A FR 7638070A FR 7638070 A FR7638070 A FR 7638070A FR 2336800 A1 FR2336800 A1 FR 2336800A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device structure
- monolithic semiconductor
- monolithic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/644,338 US4047220A (en) | 1975-12-24 | 1975-12-24 | Bipolar transistor structure having low saturation resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2336800A1 true FR2336800A1 (fr) | 1977-07-22 |
FR2336800B1 FR2336800B1 (fr) | 1982-11-05 |
Family
ID=24584465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7638070A Granted FR2336800A1 (fr) | 1975-12-24 | 1976-12-17 | Structure de dispositif semi-conducteur monolithique |
Country Status (8)
Country | Link |
---|---|
US (1) | US4047220A (fr) |
JP (1) | JPS5287376A (fr) |
DE (1) | DE2658090C2 (fr) |
FI (1) | FI66263C (fr) |
FR (1) | FR2336800A1 (fr) |
GB (1) | GB1562735A (fr) |
IT (1) | IT1065584B (fr) |
MX (1) | MX143444A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117507A (en) * | 1976-06-22 | 1978-09-26 | Sgs-Ates Componeti Elettronici S.P.A. | Diode formed in integrated-circuit structure |
US4152715A (en) * | 1977-11-28 | 1979-05-01 | The United States Of America As Represented By The Secretary Of The Army | Silicon base CCD-bipolar transistor compatible methods and products |
US4236164A (en) * | 1977-12-28 | 1980-11-25 | Bell Telephone Laboratories, Incorporated | Bipolar transistor stabilization structure |
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
US4233618A (en) * | 1978-07-31 | 1980-11-11 | Sprague Electric Company | Integrated circuit with power transistor |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US4412142A (en) * | 1980-12-24 | 1983-10-25 | General Electric Company | Integrated circuit incorporating low voltage and high voltage semiconductor devices |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
US5001538A (en) * | 1988-12-28 | 1991-03-19 | Synergy Semiconductor Corporation | Bipolar sinker structure and process for forming same |
EP0665597A1 (fr) * | 1994-01-27 | 1995-08-02 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | IGBT et son procédé de fabrication |
JP3367500B2 (ja) * | 2000-03-15 | 2003-01-14 | 日本電気株式会社 | 半導体装置 |
US9231403B2 (en) * | 2014-03-24 | 2016-01-05 | Texas Instruments Incorporated | ESD protection circuit with plural avalanche diodes |
US9312371B2 (en) * | 2014-07-24 | 2016-04-12 | Globalfoundries Inc. | Bipolar junction transistors and methods of fabrication |
CN111063723B (zh) * | 2019-11-25 | 2021-12-28 | 深圳深爱半导体股份有限公司 | 开关集成控制器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3377527A (en) * | 1963-12-13 | 1968-04-09 | Philips Corp | Low capacity and resistance transistor structure employing a two-conductivity collector region |
US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
FR2103520A1 (fr) * | 1970-08-26 | 1972-04-14 | Western Electric Co | |
US3665266A (en) * | 1970-12-10 | 1972-05-23 | Motorola Inc | Low saturation resistance,low offset voltage,monolithic analog switch |
FR2144595A1 (fr) * | 1971-07-07 | 1973-02-16 | Radiotechnique Compelec | |
DE2607089A1 (de) * | 1975-02-25 | 1976-09-16 | Gen Electric | Integrierte schaltung mit leistungstransistor- und singaltransistorbereichen |
-
1975
- 1975-12-24 US US05/644,338 patent/US4047220A/en not_active Expired - Lifetime
-
1976
- 1976-12-14 GB GB52026/76A patent/GB1562735A/en not_active Expired
- 1976-12-16 MX MX167459A patent/MX143444A/es unknown
- 1976-12-17 FR FR7638070A patent/FR2336800A1/fr active Granted
- 1976-12-17 FI FI763629A patent/FI66263C/fi not_active IP Right Cessation
- 1976-12-22 DE DE2658090A patent/DE2658090C2/de not_active Expired
- 1976-12-23 JP JP15434676A patent/JPS5287376A/ja active Granted
- 1976-12-23 IT IT30788/76A patent/IT1065584B/it active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3377527A (en) * | 1963-12-13 | 1968-04-09 | Philips Corp | Low capacity and resistance transistor structure employing a two-conductivity collector region |
US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
FR2103520A1 (fr) * | 1970-08-26 | 1972-04-14 | Western Electric Co | |
US3665266A (en) * | 1970-12-10 | 1972-05-23 | Motorola Inc | Low saturation resistance,low offset voltage,monolithic analog switch |
FR2144595A1 (fr) * | 1971-07-07 | 1973-02-16 | Radiotechnique Compelec | |
DE2607089A1 (de) * | 1975-02-25 | 1976-09-16 | Gen Electric | Integrierte schaltung mit leistungstransistor- und singaltransistorbereichen |
Also Published As
Publication number | Publication date |
---|---|
FI66263C (fi) | 1984-09-10 |
JPS5551346B2 (fr) | 1980-12-23 |
IT1065584B (it) | 1985-02-25 |
FI763629A (fr) | 1977-06-25 |
DE2658090A1 (de) | 1977-07-07 |
MX143444A (es) | 1981-05-12 |
JPS5287376A (en) | 1977-07-21 |
FR2336800B1 (fr) | 1982-11-05 |
GB1562735A (en) | 1980-03-12 |
FI66263B (fi) | 1984-05-31 |
DE2658090C2 (de) | 1985-12-12 |
US4047220A (en) | 1977-09-06 |
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