FR2314580A1 - Procede d'ecriture au faisceau electronique de configurations de microcircuits - Google Patents

Procede d'ecriture au faisceau electronique de configurations de microcircuits

Info

Publication number
FR2314580A1
FR2314580A1 FR7614182A FR7614182A FR2314580A1 FR 2314580 A1 FR2314580 A1 FR 2314580A1 FR 7614182 A FR7614182 A FR 7614182A FR 7614182 A FR7614182 A FR 7614182A FR 2314580 A1 FR2314580 A1 FR 2314580A1
Authority
FR
France
Prior art keywords
microcircuit
configurations
writing process
electronic beam
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7614182A
Other languages
English (en)
Other versions
FR2314580B1 (fr
Inventor
Tai-Hon P Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2314580A1 publication Critical patent/FR2314580A1/fr
Application granted granted Critical
Publication of FR2314580B1 publication Critical patent/FR2314580B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
FR7614182A 1975-06-13 1976-05-06 Procede d'ecriture au faisceau electronique de configurations de microcircuits Granted FR2314580A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/586,697 US3956635A (en) 1975-06-13 1975-06-13 Combined multiple beam size and spiral scan method for electron beam writing of microcircuit patterns

Publications (2)

Publication Number Publication Date
FR2314580A1 true FR2314580A1 (fr) 1977-01-07
FR2314580B1 FR2314580B1 (fr) 1979-04-27

Family

ID=24346799

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7614182A Granted FR2314580A1 (fr) 1975-06-13 1976-05-06 Procede d'ecriture au faisceau electronique de configurations de microcircuits

Country Status (7)

Country Link
US (1) US3956635A (fr)
JP (1) JPS522176A (fr)
CA (1) CA1043912A (fr)
DE (1) DE2620262C2 (fr)
FR (1) FR2314580A1 (fr)
GB (1) GB1483171A (fr)
IT (1) IT1063968B (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075488A (en) * 1974-09-06 1978-02-21 Agency Of Industrial Science & Technology Pattern forming apparatus using quadrupole lenses
JPS5283177A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Electron beam exposure device
US4393312A (en) * 1976-02-05 1983-07-12 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
JPS52119178A (en) * 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
US4039810A (en) * 1976-06-30 1977-08-02 International Business Machines Corporation Electron projection microfabrication system
FR2361190A1 (fr) * 1976-08-09 1978-03-10 Zeiss Carl Fa Procede et dispositif d'usinage a froid par faisceau electronique
DE2755399A1 (de) * 1976-12-14 1978-06-22 Ernst Prof Dipl Phys Froeschle Elektronenstrahlbelichtungsverfahren mit kompensation des proximityeffekts
GB1598219A (en) * 1977-08-10 1981-09-16 Ibm Electron beam system
US4199689A (en) * 1977-12-21 1980-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposing method and electron beam apparatus
NL182924C (nl) * 1978-05-12 1988-06-01 Philips Nv Inrichting voor het implanteren van ionen in een trefplaat.
JPS54179142U (fr) * 1978-06-08 1979-12-18
US4263514A (en) * 1979-09-13 1981-04-21 Hughes Aircraft Company Electron beam system
US4276477A (en) * 1979-09-17 1981-06-30 Varian Associates, Inc. Focusing apparatus for uniform application of charged particle beam
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
JPS58202529A (ja) * 1982-05-21 1983-11-25 Toshiba Corp 荷電ビ−ム光学鏡筒
FR2532783A1 (fr) * 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
JPH0732110B2 (ja) * 1984-05-18 1995-04-10 株式会社日立製作所 電子線露光装置
CN86105432A (zh) * 1985-09-27 1987-05-27 美国电话电报公司 带电粒子束曝光
GB2190567A (en) * 1986-05-16 1987-11-18 Philips Electronic Associated Electron beam pattern generator control
JPH0616405B2 (ja) * 1987-09-02 1994-03-02 株式会社日立製作所 電子顕微鏡
US5130547A (en) * 1989-11-30 1992-07-14 Fujitsu Limited Charged-particle beam exposure method and apparatus
US5251140A (en) * 1991-07-26 1993-10-05 International Business Machines Corporation E-beam control data compaction system and method
US5159201A (en) * 1991-07-26 1992-10-27 International Business Machines Corporation Shape decompositon system and method
WO1996028838A1 (fr) * 1995-03-10 1996-09-19 Leica Cambridge, Ltd. Procede d'ecriture d'un motif a l'aide d'un faisceau d'electrons
US6979831B2 (en) * 2004-02-19 2005-12-27 Seagate Technology Llc Method and apparatus for a formatter following electron beam substrate processing system
US7038225B2 (en) * 2004-06-23 2006-05-02 Seagate Technology Llc Method and apparatus for electron beam processing of substrates
DE102012010707A1 (de) * 2012-05-30 2013-12-05 Carl Zeiss Microscopy Gmbh Verfahren und vorrichtung zum abrastern einer oberfläche einesobjekts mit einem teilchenstrahl

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617686A (en) * 1968-07-26 1971-11-02 Walter Dietrich Apparatus for treating workpieces with magnetically focused beams of electrically charged particles
FR2078948A5 (fr) * 1970-02-27 1971-11-05 Philips Nv

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3483427A (en) * 1967-11-03 1969-12-09 Minnesota Mining & Mfg Lens for electron beam recorder
NL6807439A (fr) * 1968-05-27 1969-12-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617686A (en) * 1968-07-26 1971-11-02 Walter Dietrich Apparatus for treating workpieces with magnetically focused beams of electrically charged particles
FR2078948A5 (fr) * 1970-02-27 1971-11-05 Philips Nv

Also Published As

Publication number Publication date
US3956635A (en) 1976-05-11
FR2314580B1 (fr) 1979-04-27
JPS522176A (en) 1977-01-08
DE2620262C2 (de) 1985-04-18
IT1063968B (it) 1985-02-18
JPS5329581B2 (fr) 1978-08-22
GB1483171A (en) 1977-08-17
DE2620262A1 (de) 1976-12-23
CA1043912A (fr) 1978-12-05

Similar Documents

Publication Publication Date Title
FR2314580A1 (fr) Procede d'ecriture au faisceau electronique de configurations de microcircuits
BE878667A (fr) Procede de production de circuits integres
BE841436A (fr) Procede de recoulage d'une laque sensible pour fabriquer des masques dont les dessins ont des dimensions inferieures au micrometre
BE862654A (fr) Procede de realisation de circuits inductifs
IT7921113A0 (it) Procedimento di sintesi dell'ammoniaca.
FR2414565B1 (fr) Procede d'electrodeposition de cuivre
BE856542A (fr) Procede d'hydroformylation perfectionne
FR2329059A1 (fr) Procede d'elimination de metaux alcalins
BE839483A (fr) Procede d'ammonoxydation
IT1115356B (it) Processo per la fabbricazione di microcircuiti
FR2335484A1 (fr) Procede de production d'aldehydes
FR2329402A1 (fr) Procede de realisation d'une piece aerodynamique
BE842473A (fr) Procede d'extraction
FR2299769A1 (fr) Procede d'application
BR7908365A (pt) Processo de producao de dispositivo semi-condutor
FR2321818A1 (fr) Module electronique
IT7867719A0 (it) Generatore segnali di strobe
BE846703A (fr) Procede de supervision de signaux d'horloge
FR2318142A1 (fr) Procede d'acetoxylation
FR2329081A1 (fr) Procede d'exploitation d'accumulateurs au plomb
BE858239A (fr) Procede de traitement d'information
DK66879A (da) Guldbelaegningsplade
BE745216A (fr) Procede d'obtention de mercapto methyl sulfures
SE7900379L (sv) Halvledare-integrerad-krets
FR2305024A1 (fr) Procede de construction d'un dispositif semi-conducteur

Legal Events

Date Code Title Description
ST Notification of lapse