FR2313976A1 - PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS - Google Patents
PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESSInfo
- Publication number
- FR2313976A1 FR2313976A1 FR7518581A FR7518581A FR2313976A1 FR 2313976 A1 FR2313976 A1 FR 2313976A1 FR 7518581 A FR7518581 A FR 7518581A FR 7518581 A FR7518581 A FR 7518581A FR 2313976 A1 FR2313976 A1 FR 2313976A1
- Authority
- FR
- France
- Prior art keywords
- single crystals
- implementing
- gallium nitride
- manufacturing gallium
- crystals obtained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7518581A FR2313976A1 (en) | 1975-06-13 | 1975-06-13 | PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS |
DE19762624958 DE2624958C3 (en) | 1975-06-13 | 1976-06-03 | Method for growing single crystal gallium nitride |
GB2407776A GB1551403A (en) | 1975-06-13 | 1976-06-10 | Method of manufacturing single crystals of gallium nitride |
JP6721176A JPS51151299A (en) | 1975-06-13 | 1976-06-10 | Method of making single crystal galliumnitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7518581A FR2313976A1 (en) | 1975-06-13 | 1975-06-13 | PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2313976A1 true FR2313976A1 (en) | 1977-01-07 |
Family
ID=9156506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7518581A Withdrawn FR2313976A1 (en) | 1975-06-13 | 1975-06-13 | PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS51151299A (en) |
DE (1) | DE2624958C3 (en) |
FR (1) | FR2313976A1 (en) |
GB (1) | GB1551403A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004845A1 (en) * | 1993-08-10 | 1995-02-16 | Centrum Badan Wysokocisnieniowych | Crystalline multilayer structure and manufacturing method thereof |
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
WO1998055671A1 (en) * | 1997-06-05 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW519551B (en) * | 1997-06-11 | 2003-02-01 | Hitachi Cable | Methods of fabricating nitride crystals and nitride crystals obtained therefrom |
WO1999034037A1 (en) * | 1997-12-25 | 1999-07-08 | Japan Energy Corporation | Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors |
JP5348123B2 (en) * | 1999-06-09 | 2013-11-20 | 株式会社リコー | Crystal manufacturing equipment |
JP5082213B2 (en) * | 2004-08-20 | 2012-11-28 | 三菱化学株式会社 | Metal nitride and method for producing metal nitride |
JP2010042976A (en) * | 2008-07-16 | 2010-02-25 | Sumitomo Electric Ind Ltd | METHOD FOR GROWING GaN CRYSTAL |
-
1975
- 1975-06-13 FR FR7518581A patent/FR2313976A1/en not_active Withdrawn
-
1976
- 1976-06-03 DE DE19762624958 patent/DE2624958C3/en not_active Expired
- 1976-06-10 JP JP6721176A patent/JPS51151299A/en active Pending
- 1976-06-10 GB GB2407776A patent/GB1551403A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995004845A1 (en) * | 1993-08-10 | 1995-02-16 | Centrum Badan Wysokocisnieniowych | Crystalline multilayer structure and manufacturing method thereof |
US5637531A (en) * | 1993-08-10 | 1997-06-10 | High Pressure Research Center, Polish Academy | Method of making a crystalline multilayer structure at two pressures the second one lower than first |
WO1997013891A1 (en) * | 1995-10-13 | 1997-04-17 | Centrum Badan Wysokocisnieniowych | METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
WO1998055671A1 (en) * | 1997-06-05 | 1998-12-10 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
US6273948B1 (en) | 1997-06-05 | 2001-08-14 | Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk | Method of fabrication of highly resistive GaN bulk crystals |
Also Published As
Publication number | Publication date |
---|---|
GB1551403A (en) | 1979-08-30 |
DE2624958C3 (en) | 1980-09-25 |
JPS51151299A (en) | 1976-12-25 |
DE2624958A1 (en) | 1976-12-23 |
DE2624958B2 (en) | 1980-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |