FR2313976A1 - PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS - Google Patents

PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS

Info

Publication number
FR2313976A1
FR2313976A1 FR7518581A FR7518581A FR2313976A1 FR 2313976 A1 FR2313976 A1 FR 2313976A1 FR 7518581 A FR7518581 A FR 7518581A FR 7518581 A FR7518581 A FR 7518581A FR 2313976 A1 FR2313976 A1 FR 2313976A1
Authority
FR
France
Prior art keywords
single crystals
implementing
gallium nitride
manufacturing gallium
crystals obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7518581A
Other languages
French (fr)
Inventor
Jean-Philippe Hallais
Roland Madar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7518581A priority Critical patent/FR2313976A1/en
Priority to DE19762624958 priority patent/DE2624958C3/en
Priority to GB2407776A priority patent/GB1551403A/en
Priority to JP6721176A priority patent/JPS51151299A/en
Publication of FR2313976A1 publication Critical patent/FR2313976A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7518581A 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS Withdrawn FR2313976A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7518581A FR2313976A1 (en) 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS
DE19762624958 DE2624958C3 (en) 1975-06-13 1976-06-03 Method for growing single crystal gallium nitride
GB2407776A GB1551403A (en) 1975-06-13 1976-06-10 Method of manufacturing single crystals of gallium nitride
JP6721176A JPS51151299A (en) 1975-06-13 1976-06-10 Method of making single crystal galliumnitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7518581A FR2313976A1 (en) 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS

Publications (1)

Publication Number Publication Date
FR2313976A1 true FR2313976A1 (en) 1977-01-07

Family

ID=9156506

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7518581A Withdrawn FR2313976A1 (en) 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS

Country Status (4)

Country Link
JP (1) JPS51151299A (en)
DE (1) DE2624958C3 (en)
FR (1) FR2313976A1 (en)
GB (1) GB1551403A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995004845A1 (en) * 1993-08-10 1995-02-16 Centrum Badan Wysokocisnieniowych Crystalline multilayer structure and manufacturing method thereof
WO1997013891A1 (en) * 1995-10-13 1997-04-17 Centrum Badan Wysokocisnieniowych METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
WO1998055671A1 (en) * 1997-06-05 1998-12-10 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW519551B (en) * 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
WO1999034037A1 (en) * 1997-12-25 1999-07-08 Japan Energy Corporation Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
JP5348123B2 (en) * 1999-06-09 2013-11-20 株式会社リコー Crystal manufacturing equipment
JP5082213B2 (en) * 2004-08-20 2012-11-28 三菱化学株式会社 Metal nitride and method for producing metal nitride
JP2010042976A (en) * 2008-07-16 2010-02-25 Sumitomo Electric Ind Ltd METHOD FOR GROWING GaN CRYSTAL

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995004845A1 (en) * 1993-08-10 1995-02-16 Centrum Badan Wysokocisnieniowych Crystalline multilayer structure and manufacturing method thereof
US5637531A (en) * 1993-08-10 1997-06-10 High Pressure Research Center, Polish Academy Method of making a crystalline multilayer structure at two pressures the second one lower than first
WO1997013891A1 (en) * 1995-10-13 1997-04-17 Centrum Badan Wysokocisnieniowych METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
WO1998055671A1 (en) * 1997-06-05 1998-12-10 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
US6273948B1 (en) 1997-06-05 2001-08-14 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk Method of fabrication of highly resistive GaN bulk crystals

Also Published As

Publication number Publication date
GB1551403A (en) 1979-08-30
DE2624958C3 (en) 1980-09-25
JPS51151299A (en) 1976-12-25
DE2624958A1 (en) 1976-12-23
DE2624958B2 (en) 1980-01-31

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Legal Events

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