FR2301093B1 - - Google Patents
Info
- Publication number
- FR2301093B1 FR2301093B1 FR7603823A FR7603823A FR2301093B1 FR 2301093 B1 FR2301093 B1 FR 2301093B1 FR 7603823 A FR7603823 A FR 7603823A FR 7603823 A FR7603823 A FR 7603823A FR 2301093 B1 FR2301093 B1 FR 2301093B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752506436 DE2506436C3 (en) | 1975-02-15 | 1975-02-15 | Diffusion process for producing aluminum-doped isolation zones for semiconductor components |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2301093A1 FR2301093A1 (en) | 1976-09-10 |
FR2301093B1 true FR2301093B1 (en) | 1982-08-20 |
Family
ID=5938970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7603823A Granted FR2301093A1 (en) | 1975-02-15 | 1976-02-12 | Semiconductors using aluminium doped insulation layer - where aluminium is diffused simultaneously with boron required for the base |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2506436C3 (en) |
FR (1) | FR2301093A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1536545A (en) * | 1975-03-26 | 1978-12-20 | Mullard Ltd | Semiconductor device manufacture |
US4099997A (en) * | 1976-06-21 | 1978-07-11 | Rca Corporation | Method of fabricating a semiconductor device |
JPS53118367A (en) * | 1977-03-25 | 1978-10-16 | Hitachi Ltd | Manufacture of semiconductor |
US4188245A (en) * | 1978-09-18 | 1980-02-12 | General Electric Company | Selective open tube aluminum diffusion |
NL8006668A (en) * | 1980-12-09 | 1982-07-01 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
DE3137813A1 (en) * | 1981-09-23 | 1983-03-31 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method of producing a semiconductor device |
DE3782608D1 (en) * | 1986-09-30 | 1992-12-17 | Siemens Ag | METHOD FOR PRODUCING A P-DOPED SEMICONDUCTOR AREA IN AN N-CONDUCTING SEMICONDUCTOR BODY. |
-
1975
- 1975-02-15 DE DE19752506436 patent/DE2506436C3/en not_active Expired
-
1976
- 1976-02-12 FR FR7603823A patent/FR2301093A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE2506436C3 (en) | 1980-05-14 |
DE2506436B2 (en) | 1979-08-30 |
FR2301093A1 (en) | 1976-09-10 |
DE2506436A1 (en) | 1976-08-26 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |