FR2300417A1 - INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS - Google Patents
INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORSInfo
- Publication number
- FR2300417A1 FR2300417A1 FR7603362A FR7603362A FR2300417A1 FR 2300417 A1 FR2300417 A1 FR 2300417A1 FR 7603362 A FR7603362 A FR 7603362A FR 7603362 A FR7603362 A FR 7603362A FR 2300417 A1 FR2300417 A1 FR 2300417A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor circuit
- integrated semiconductor
- npn transistors
- complementary pnp
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50016561A JPS5914897B2 (en) | 1975-02-08 | 1975-02-08 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2300417A1 true FR2300417A1 (en) | 1976-09-03 |
FR2300417B1 FR2300417B1 (en) | 1980-03-21 |
Family
ID=11919681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7603362A Granted FR2300417A1 (en) | 1975-02-08 | 1976-02-06 | INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY PNP-NPN TRANSISTORS |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5914897B2 (en) |
CA (1) | CA1048655A (en) |
CH (1) | CH607332A5 (en) |
DE (1) | DE2604735A1 (en) |
FR (1) | FR2300417A1 (en) |
GB (1) | GB1533156A (en) |
IT (1) | IT1055132B (en) |
NL (1) | NL7601307A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0301468A2 (en) * | 1987-07-29 | 1989-02-01 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
CN113206040A (en) * | 2020-01-30 | 2021-08-03 | 意法半导体(克洛尔2)公司 | Method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
JPS6062595U (en) * | 1983-10-04 | 1985-05-01 | 井上 八郎 | Cutting edge of ground drilling bit |
JPS61164399U (en) * | 1985-03-30 | 1986-10-11 | ||
IT1218471B (en) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE |
JPH053587Y2 (en) * | 1986-11-19 | 1993-01-28 | ||
JPS6386192U (en) * | 1986-11-19 | 1988-06-06 | ||
JPH02296994A (en) * | 1989-05-09 | 1990-12-07 | Fujita Corp | Cutter head for slurry shield machine |
JPH03128793U (en) * | 1990-04-10 | 1991-12-25 | ||
JPH0450493U (en) * | 1990-08-31 | 1992-04-28 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5147583B2 (en) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/en not_active Expired
-
1976
- 1976-02-04 GB GB440076A patent/GB1533156A/en not_active Expired
- 1976-02-05 IT IT1995076A patent/IT1055132B/en active
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/en not_active Withdrawn
- 1976-02-06 FR FR7603362A patent/FR2300417A1/en active Granted
- 1976-02-09 NL NL7601307A patent/NL7601307A/en not_active Application Discontinuation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0301468A2 (en) * | 1987-07-29 | 1989-02-01 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
EP0301468A3 (en) * | 1987-07-29 | 1989-10-04 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
CN113206040A (en) * | 2020-01-30 | 2021-08-03 | 意法半导体(克洛尔2)公司 | Method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor |
FR3106931A1 (en) * | 2020-01-30 | 2021-08-06 | Stmicroelectronics (Crolles 2) Sas | A method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor for radio frequency applications |
US11538719B2 (en) | 2020-01-30 | 2022-12-27 | Stmicroelectronics (Crolles 2) Sas | Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
US11955481B2 (en) | 2020-01-30 | 2024-04-09 | Stmicroelectronics (Crolles 2) Sas | Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications |
Also Published As
Publication number | Publication date |
---|---|
DE2604735A1 (en) | 1976-08-19 |
IT1055132B (en) | 1981-12-21 |
NL7601307A (en) | 1976-08-10 |
GB1533156A (en) | 1978-11-22 |
JPS5914897B2 (en) | 1984-04-06 |
CA1048655A (en) | 1979-02-13 |
CH607332A5 (en) | 1978-12-15 |
FR2300417B1 (en) | 1980-03-21 |
JPS5191680A (en) | 1976-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |