FR2287109A1 - Diode electroluminescente - Google Patents
Diode electroluminescenteInfo
- Publication number
- FR2287109A1 FR2287109A1 FR7529892A FR7529892A FR2287109A1 FR 2287109 A1 FR2287109 A1 FR 2287109A1 FR 7529892 A FR7529892 A FR 7529892A FR 7529892 A FR7529892 A FR 7529892A FR 2287109 A1 FR2287109 A1 FR 2287109A1
- Authority
- FR
- France
- Prior art keywords
- light emitting
- emitting diode
- diode
- light
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4294774A GB1478152A (en) | 1974-10-03 | 1974-10-03 | Light emissive diode |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2287109A1 true FR2287109A1 (fr) | 1976-04-30 |
FR2287109B1 FR2287109B1 (fr) | 1982-04-02 |
Family
ID=10426668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7529892A Granted FR2287109A1 (fr) | 1974-10-03 | 1975-09-30 | Diode electroluminescente |
Country Status (4)
Country | Link |
---|---|
US (1) | US4053914A (fr) |
DE (1) | DE2542072A1 (fr) |
FR (1) | FR2287109A1 (fr) |
GB (1) | GB1478152A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2315174A1 (fr) * | 1975-06-17 | 1977-01-14 | Matsushita Electric Ind Co Ltd | Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication |
DE2915888A1 (de) * | 1978-04-21 | 1979-10-31 | Philips Nv | Elektrolumineszierende halbleiteranordnung |
FR2436506A1 (fr) * | 1978-09-15 | 1980-04-11 | Westinghouse Electric Corp | Transistor optique et methode de fonctionnement |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2624436C2 (de) * | 1976-06-01 | 1982-11-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lichtwellenleiter mit integriertem Detektorelement |
FR2387519A1 (fr) * | 1977-04-15 | 1978-11-10 | Thomson Csf | Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode |
US4199385A (en) * | 1977-09-21 | 1980-04-22 | International Business Machines Corporation | Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion |
US4167016A (en) * | 1977-09-21 | 1979-09-04 | International Business Machines Corporation | Optically isolated monolithic light emitting diode array |
US4220960A (en) * | 1978-10-25 | 1980-09-02 | International Telephone And Telegraph Corporation | Light emitting diode structure |
US4309670A (en) * | 1979-09-13 | 1982-01-05 | Xerox Corporation | Transverse light emitting electroluminescent devices |
US4249967A (en) * | 1979-12-26 | 1981-02-10 | International Telephone And Telegraph Corporation | Method of manufacturing a light-emitting diode by liquid phase epitaxy |
EP0042484A3 (fr) * | 1980-06-25 | 1982-07-14 | Northern Telecom Limited | Diodes électroluminescentes à forte émission lumineuse |
US4706101A (en) * | 1984-10-27 | 1987-11-10 | Kabushiki Kaisha Toshiba | Light emitting diode formed of a compound semiconductor material |
JPS62128587A (ja) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ |
DE3728568A1 (de) * | 1987-08-27 | 1989-03-16 | Telefunken Electronic Gmbh | Halbleiterlaseranordnung |
JPH02174272A (ja) * | 1988-12-17 | 1990-07-05 | Samsung Electron Co Ltd | 発光ダイオードアレイの製造方法 |
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
US8587020B2 (en) | 1997-11-19 | 2013-11-19 | Epistar Corporation | LED lamps |
DE19963550B4 (de) * | 1999-12-22 | 2004-05-06 | Epigap Optoelektronik Gmbh | Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper |
US6429460B1 (en) | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
WO2004059809A2 (fr) * | 2002-12-20 | 2004-07-15 | Cree, Inc. | Procedes de realisation de dispositifs semi-conducteurs a mesas semi-conducteurs et couches de contact a auto-alignement et dispositifs connexes |
EP2495772A1 (fr) * | 2011-03-02 | 2012-09-05 | Azzurro Semiconductors AG | Dispositif électroluminescent semi-conducteur |
FR3069106B1 (fr) * | 2017-07-17 | 2019-10-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente comportant un empilement a partie amincie et procede d'elaboration de la diode electroluminescente |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462605A (en) * | 1965-09-22 | 1969-08-19 | Gen Electric | Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter |
US3691476A (en) * | 1970-12-31 | 1972-09-12 | Bell Telephone Labor Inc | Double heterostructure laser diodes |
US3821775A (en) * | 1971-09-23 | 1974-06-28 | Spectronics Inc | Edge emission gaas light emitter structure |
US3699407A (en) * | 1971-09-29 | 1972-10-17 | Motorola Inc | Electro-optical coupled-pair using a schottky barrier diode detector |
JPS5310840B2 (fr) * | 1972-05-04 | 1978-04-17 | ||
US3900863A (en) * | 1974-05-13 | 1975-08-19 | Westinghouse Electric Corp | Light-emitting diode which generates light in three dimensions |
US3996492A (en) * | 1975-05-28 | 1976-12-07 | International Business Machines Corporation | Two-dimensional integrated injection laser array |
-
1974
- 1974-10-03 GB GB4294774A patent/GB1478152A/en not_active Expired
-
1975
- 1975-09-09 US US05/611,727 patent/US4053914A/en not_active Expired - Lifetime
- 1975-09-20 DE DE19752542072 patent/DE2542072A1/de not_active Withdrawn
- 1975-09-30 FR FR7529892A patent/FR2287109A1/fr active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2315174A1 (fr) * | 1975-06-17 | 1977-01-14 | Matsushita Electric Ind Co Ltd | Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication |
DE2915888A1 (de) * | 1978-04-21 | 1979-10-31 | Philips Nv | Elektrolumineszierende halbleiteranordnung |
FR2436506A1 (fr) * | 1978-09-15 | 1980-04-11 | Westinghouse Electric Corp | Transistor optique et methode de fonctionnement |
Also Published As
Publication number | Publication date |
---|---|
DE2542072A1 (de) | 1976-04-08 |
GB1478152A (en) | 1977-06-29 |
FR2287109B1 (fr) | 1982-04-02 |
US4053914A (en) | 1977-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |