FR2277433A1 - Liquid cooled semiconductor - particularly applicable to thyristors. coolant temperature is raised by two degrees for 200 watt dissipation - Google Patents
Liquid cooled semiconductor - particularly applicable to thyristors. coolant temperature is raised by two degrees for 200 watt dissipationInfo
- Publication number
- FR2277433A1 FR2277433A1 FR7423411A FR7423411A FR2277433A1 FR 2277433 A1 FR2277433 A1 FR 2277433A1 FR 7423411 A FR7423411 A FR 7423411A FR 7423411 A FR7423411 A FR 7423411A FR 2277433 A1 FR2277433 A1 FR 2277433A1
- Authority
- FR
- France
- Prior art keywords
- thyristors
- oil
- raised
- degrees
- coolant temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Abstract
A thyristor group supplying about 100 watts requires a flow of coolant, which is necessarily some electrically insulating oil, of two litres per minute giving a 4 to 5 metres per second flow, the temperature difference between the thyristor surface and the oil being about 20 deg.C. Entry and exit of the oil from such a group of thyristors is via single ports leading to channels in the overall thyristor group casing. A nut ring on a cylindrical body exerts through an elastic washer and an insulating sheet a pressure on a connexion plate. This plate transmits the pressure to the end of a semiconductor element bearing on the base of the body through other connexion plates and semiconductor elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7423411A FR2277433A1 (en) | 1974-07-05 | 1974-07-05 | Liquid cooled semiconductor - particularly applicable to thyristors. coolant temperature is raised by two degrees for 200 watt dissipation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7423411A FR2277433A1 (en) | 1974-07-05 | 1974-07-05 | Liquid cooled semiconductor - particularly applicable to thyristors. coolant temperature is raised by two degrees for 200 watt dissipation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2277433A1 true FR2277433A1 (en) | 1976-01-30 |
FR2277433B1 FR2277433B1 (en) | 1976-12-24 |
Family
ID=9140932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7423411A Granted FR2277433A1 (en) | 1974-07-05 | 1974-07-05 | Liquid cooled semiconductor - particularly applicable to thyristors. coolant temperature is raised by two degrees for 200 watt dissipation |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2277433A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0067575A2 (en) * | 1981-05-28 | 1982-12-22 | Kabushiki Kaisha Toshiba | Power semiconductor device |
FR2524760A1 (en) * | 1982-03-30 | 1983-10-07 | Auxilec | HOLDING PART FOR SEMICONDUCTOR, AND SEMICONDUCTOR POWER DEVICE COMPRISING SUCH A PART |
FR2672432A1 (en) * | 1991-02-06 | 1992-08-07 | Alcatel Cable | HIGH VOLTAGE WAVE LOCK DIODE. |
-
1974
- 1974-07-05 FR FR7423411A patent/FR2277433A1/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0067575A2 (en) * | 1981-05-28 | 1982-12-22 | Kabushiki Kaisha Toshiba | Power semiconductor device |
EP0067575A3 (en) * | 1981-05-28 | 1984-02-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Power semiconductor device |
FR2524760A1 (en) * | 1982-03-30 | 1983-10-07 | Auxilec | HOLDING PART FOR SEMICONDUCTOR, AND SEMICONDUCTOR POWER DEVICE COMPRISING SUCH A PART |
FR2672432A1 (en) * | 1991-02-06 | 1992-08-07 | Alcatel Cable | HIGH VOLTAGE WAVE LOCK DIODE. |
EP0498329A1 (en) * | 1991-02-06 | 1992-08-12 | Alcatel Cable | High tension wave-trap diode |
Also Published As
Publication number | Publication date |
---|---|
FR2277433B1 (en) | 1976-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |