FR2271705B1 - - Google Patents

Info

Publication number
FR2271705B1
FR2271705B1 FR7515387A FR7515387A FR2271705B1 FR 2271705 B1 FR2271705 B1 FR 2271705B1 FR 7515387 A FR7515387 A FR 7515387A FR 7515387 A FR7515387 A FR 7515387A FR 2271705 B1 FR2271705 B1 FR 2271705B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7515387A
Other versions
FR2271705A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2271705A1 publication Critical patent/FR2271705A1/fr
Application granted granted Critical
Publication of FR2271705B1 publication Critical patent/FR2271705B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
FR7515387A 1974-05-16 1975-05-16 Expired FR2271705B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US470691A US3889134A (en) 1974-05-16 1974-05-16 Tunnel diode digital data sample, decision and hold circuit

Publications (2)

Publication Number Publication Date
FR2271705A1 FR2271705A1 (fr) 1975-12-12
FR2271705B1 true FR2271705B1 (fr) 1978-03-17

Family

ID=23868626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7515387A Expired FR2271705B1 (fr) 1974-05-16 1975-05-16

Country Status (6)

Country Link
US (1) US3889134A (fr)
JP (1) JPS50161111A (fr)
CA (1) CA1022274A (fr)
FR (1) FR2271705B1 (fr)
GB (1) GB1456795A (fr)
IT (1) IT1036789B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695752A (en) * 1982-01-11 1987-09-22 Sperry Corporation Narrow range gate baseband receiver
SE465345B (sv) * 1990-01-04 1991-08-26 Ellemtel Utvecklings Ab Foerfarande och anordning foer att i ett telekommunikationssystem aaterskapa taktsignalen ur ett informationsbaerande bituppdelat pulstaag av nrz-typ
GB2304503B (en) * 1995-08-19 2000-04-05 Northern Telecom Ltd Clock recovery scheme for data transmission systems
AU2490600A (en) 1999-01-06 2000-07-24 Raytheon Company System for quantizing an analog signal utilizing a resonant tunneling diode differential ternary quantizer
AU2490500A (en) * 1999-01-06 2000-07-24 Raytheon Company System for continuous-time modulation
AU2719600A (en) 1999-01-06 2000-07-24 Raytheon Company System for quantizing an analog signal utilizing a resonant tunneling diode bridge
US6348887B1 (en) * 1999-01-06 2002-02-19 Raytheon Company Method and system for quantizing an analog signal utilizing a clocked resonant tunneling diode pair
US6323696B1 (en) 1999-12-07 2001-11-27 Hughes Electronics Corporation Sample and hold circuit
FR2815202B1 (fr) * 2000-10-05 2003-01-31 Cit Alcatel Convertisseur de signaux optiques du format rz au format nrz
US6490193B1 (en) 2001-08-22 2002-12-03 Raytheon Company Forming and storing data in a memory cell
US6509859B1 (en) 2001-08-22 2003-01-21 Raytheon Company Method and system for quantizing an analog signal
FR2852167B1 (fr) * 2003-03-07 2006-07-14 Cit Alcatel Dispositif de correction de la phase d'un signal de donnees et circuit de decision associe
US6906650B2 (en) * 2003-11-19 2005-06-14 Raytheon Company Method and apparatus for generating a pulse of very narrow width

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510679A (en) * 1966-10-26 1970-05-05 Gen Electric High speed memory and multiple level logic network
US3603818A (en) * 1969-06-17 1971-09-07 Bell Telephone Labor Inc Gunn-diode logic circuits

Also Published As

Publication number Publication date
GB1456795A (en) 1976-11-24
US3889134A (en) 1975-06-10
CA1022274A (fr) 1977-12-06
IT1036789B (it) 1979-10-30
JPS50161111A (fr) 1975-12-26
FR2271705A1 (fr) 1975-12-12

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Legal Events

Date Code Title Description
ST Notification of lapse