FR2269197A1 - High energy radiation detector with U section transducer - involving silver filled epoxy resin for electrical continuity - Google Patents
High energy radiation detector with U section transducer - involving silver filled epoxy resin for electrical continuityInfo
- Publication number
- FR2269197A1 FR2269197A1 FR7414847A FR7414847A FR2269197A1 FR 2269197 A1 FR2269197 A1 FR 2269197A1 FR 7414847 A FR7414847 A FR 7414847A FR 7414847 A FR7414847 A FR 7414847A FR 2269197 A1 FR2269197 A1 FR 2269197A1
- Authority
- FR
- France
- Prior art keywords
- detector
- high energy
- energy radiation
- epoxy resin
- profiles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title 1
- 239000003822 epoxy resin Substances 0.000 title 1
- 229920000647 polyepoxide Polymers 0.000 title 1
- 229910052709 silver Inorganic materials 0.000 title 1
- 239000004332 silver Substances 0.000 title 1
- 239000012792 core layer Substances 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
Detector for measuring flux of high energy radiation by the response of concentric 'U' section profiles of matl. of opposing conductive polarities i.e. 'N' and '.P', sepd. by a neutral core layer, with slabs of semi-conductive matl. of low resistivity located between and outside the legs of the 'U' and in good electrical contact with the faces of the 'U'. The detector is used for measuring the intensity of radiation of energies >2 x 106 eV by a diodic response, using detectors connected in series and/or parallel. Typically the detectors are circular or rectangular in plan, parallel to the axis of the 'U' profiles. The effective vol. of the diode is at least double that of a simple flat PIN detector, more if two or more 'U' profiles are stacked, but because each leg of the 'U' is thin, linearity remains similar to that of a simple flat detector while sensitivity is increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7414847A FR2269197A1 (en) | 1974-04-29 | 1974-04-29 | High energy radiation detector with U section transducer - involving silver filled epoxy resin for electrical continuity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7414847A FR2269197A1 (en) | 1974-04-29 | 1974-04-29 | High energy radiation detector with U section transducer - involving silver filled epoxy resin for electrical continuity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2269197A1 true FR2269197A1 (en) | 1975-11-21 |
| FR2269197B1 FR2269197B1 (en) | 1976-10-15 |
Family
ID=9138268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7414847A Granted FR2269197A1 (en) | 1974-04-29 | 1974-04-29 | High energy radiation detector with U section transducer - involving silver filled epoxy resin for electrical continuity |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2269197A1 (en) |
-
1974
- 1974-04-29 FR FR7414847A patent/FR2269197A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2269197B1 (en) | 1976-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |