FR2256539B1 - - Google Patents

Info

Publication number
FR2256539B1
FR2256539B1 FR7441907A FR7441907A FR2256539B1 FR 2256539 B1 FR2256539 B1 FR 2256539B1 FR 7441907 A FR7441907 A FR 7441907A FR 7441907 A FR7441907 A FR 7441907A FR 2256539 B1 FR2256539 B1 FR 2256539B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7441907A
Other languages
French (fr)
Other versions
FR2256539A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2256539A1 publication Critical patent/FR2256539A1/en
Application granted granted Critical
Publication of FR2256539B1 publication Critical patent/FR2256539B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7441907A 1973-12-28 1974-11-22 Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability Granted FR2256539A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42941673A 1973-12-28 1973-12-28

Publications (2)

Publication Number Publication Date
FR2256539A1 FR2256539A1 (en) 1975-07-25
FR2256539B1 true FR2256539B1 (en) 1976-10-22

Family

ID=23703151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441907A Granted FR2256539A1 (en) 1973-12-28 1974-11-22 Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability

Country Status (3)

Country Link
JP (1) JPS5099266A (en)
DE (1) DE2457484A1 (en)
FR (1) FR2256539A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
US4399605A (en) * 1982-02-26 1983-08-23 International Business Machines Corporation Method of making dense complementary transistors
JPH0779136B2 (en) * 1986-06-06 1995-08-23 株式会社日立製作所 Semiconductor device
US5136363A (en) * 1987-10-21 1992-08-04 Kabushiki Kaisha Toshiba Semiconductor device with bump electrode

Also Published As

Publication number Publication date
DE2457484A1 (en) 1975-07-10
JPS5099266A (en) 1975-08-06
FR2256539A1 (en) 1975-07-25

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Legal Events

Date Code Title Description
ST Notification of lapse