FR2245089A1 - - Google Patents

Info

Publication number
FR2245089A1
FR2245089A1 FR7432334A FR7432334A FR2245089A1 FR 2245089 A1 FR2245089 A1 FR 2245089A1 FR 7432334 A FR7432334 A FR 7432334A FR 7432334 A FR7432334 A FR 7432334A FR 2245089 A1 FR2245089 A1 FR 2245089A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7432334A
Other languages
French (fr)
Other versions
FR2245089B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2245089A1 publication Critical patent/FR2245089A1/fr
Application granted granted Critical
Publication of FR2245089B1 publication Critical patent/FR2245089B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Control Of Temperature (AREA)
FR7432334A 1973-09-26 1974-09-25 Expired FR2245089B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10810773A JPS5060188A (de) 1973-09-26 1973-09-26

Publications (2)

Publication Number Publication Date
FR2245089A1 true FR2245089A1 (de) 1975-04-18
FR2245089B1 FR2245089B1 (de) 1978-11-24

Family

ID=14476050

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7432334A Expired FR2245089B1 (de) 1973-09-26 1974-09-25

Country Status (5)

Country Link
JP (1) JPS5060188A (de)
CA (1) CA1005926A (de)
FR (1) FR2245089B1 (de)
GB (1) GB1454323A (de)
SE (1) SE405184B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339255A1 (fr) * 1976-01-26 1977-08-19 Cutler Hammer World Trade Inc Dispositif de commutation semi-conducteur commande en temperature
EP0208970A1 (de) * 1985-07-09 1987-01-21 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5266382A (en) * 1975-11-28 1977-06-01 Mitsubishi Electric Corp Indirectly-heated heat-sensitive thyristor
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
US5140394A (en) * 1988-07-26 1992-08-18 Texas Instruments Incorporated Electrothermal sensor apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339255A1 (fr) * 1976-01-26 1977-08-19 Cutler Hammer World Trade Inc Dispositif de commutation semi-conducteur commande en temperature
EP0208970A1 (de) * 1985-07-09 1987-01-21 Siemens Aktiengesellschaft MOSFET mit Temperaturschutz
US4937646A (en) * 1985-07-09 1990-06-26 Siemens Aktiengesellschaft MOSFET with temperature protection

Also Published As

Publication number Publication date
FR2245089B1 (de) 1978-11-24
SE405184B (sv) 1978-11-20
GB1454323A (en) 1976-11-03
DE2446104B2 (de) 1976-03-18
SE7412062L (de) 1975-03-27
DE2446104A1 (de) 1975-04-03
JPS5060188A (de) 1975-05-23
CA1005926A (en) 1977-02-22

Similar Documents

Publication Publication Date Title
AU476761B2 (de)
AU465372B2 (de)
AU474593B2 (de)
AU474511B2 (de)
AU474838B2 (de)
AU465453B2 (de)
AU471343B2 (de)
AU465434B2 (de)
AU450229B2 (de)
AU476714B2 (de)
AU476696B2 (de)
AU466283B2 (de)
AU472848B2 (de)
AU477823B2 (de)
AU477824B2 (de)
AU461342B2 (de)
AU447540B2 (de)
AR193950A1 (de)
AR195311A1 (de)
AU471461B2 (de)
AU476873B1 (de)
AU1891376A (de)
BG19070A1 (de)
BG18978A1 (de)
AU479420A (de)