FR2222660A1 - Radiation detection device - measures beta, gamma and X-rays in the range below 50 keV - Google Patents
Radiation detection device - measures beta, gamma and X-rays in the range below 50 keVInfo
- Publication number
- FR2222660A1 FR2222660A1 FR7310148A FR7310148A FR2222660A1 FR 2222660 A1 FR2222660 A1 FR 2222660A1 FR 7310148 A FR7310148 A FR 7310148A FR 7310148 A FR7310148 A FR 7310148A FR 2222660 A1 FR2222660 A1 FR 2222660A1
- Authority
- FR
- France
- Prior art keywords
- gamma
- rays
- kev
- detection device
- radiation detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
A semiconductor of the MOSFET type of device is made in the form of a tube or pin. The tube or pin is of silicon, coated with silicon oxide except at the two ends where it is converted from P to N (for example by difusion) in the shape of rings. The surfaces of the silicon oxide and of the two rings are coated with metal to which are attached non-rectifying connections. The three connections form the terminals of the transistor device. Such a device can measure low radiations of beta, gamma and X rays, up to approx 50 Ke V,and of 102 to 105 rads, without disturbing the original field. The device is calibrated in a known field.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7310148A FR2222660A1 (en) | 1973-03-21 | 1973-03-21 | Radiation detection device - measures beta, gamma and X-rays in the range below 50 keV |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7310148A FR2222660A1 (en) | 1973-03-21 | 1973-03-21 | Radiation detection device - measures beta, gamma and X-rays in the range below 50 keV |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2222660A1 true FR2222660A1 (en) | 1974-10-18 |
FR2222660B1 FR2222660B1 (en) | 1976-11-05 |
Family
ID=9116641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7310148A Granted FR2222660A1 (en) | 1973-03-21 | 1973-03-21 | Radiation detection device - measures beta, gamma and X-rays in the range below 50 keV |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2222660A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2502793A1 (en) * | 1981-03-26 | 1982-10-01 | Commissariat Energie Atomique | DOSIMETER FOR X AND GAMMA PHOTONS, FOR ALPHA RAYS AND FOR FAST NEUTRONS, USED IN PARTICULAR FOR THE MEASUREMENT OF HIGH DOSES |
US5065028A (en) * | 1989-07-01 | 1991-11-12 | Siemens Plessey Controls Limited | Radiation detector |
US5268578A (en) * | 1992-06-12 | 1993-12-07 | North American Philips Corporation | Shape for x-ray detector |
-
1973
- 1973-03-21 FR FR7310148A patent/FR2222660A1/en active Granted
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2502793A1 (en) * | 1981-03-26 | 1982-10-01 | Commissariat Energie Atomique | DOSIMETER FOR X AND GAMMA PHOTONS, FOR ALPHA RAYS AND FOR FAST NEUTRONS, USED IN PARTICULAR FOR THE MEASUREMENT OF HIGH DOSES |
EP0062561A1 (en) * | 1981-03-26 | 1982-10-13 | Commissariat à l'Energie Atomique | Dosimeter for the measurement of alpha, gamma, X rays and fast neutron doses, especially for large doses measurement |
US5065028A (en) * | 1989-07-01 | 1991-11-12 | Siemens Plessey Controls Limited | Radiation detector |
US5268578A (en) * | 1992-06-12 | 1993-12-07 | North American Philips Corporation | Shape for x-ray detector |
Also Published As
Publication number | Publication date |
---|---|
FR2222660B1 (en) | 1976-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |