FR2144581A1 - - Google Patents
Info
- Publication number
- FR2144581A1 FR2144581A1 FR7124728A FR7124728A FR2144581A1 FR 2144581 A1 FR2144581 A1 FR 2144581A1 FR 7124728 A FR7124728 A FR 7124728A FR 7124728 A FR7124728 A FR 7124728A FR 2144581 A1 FR2144581 A1 FR 2144581A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7124728A FR2144581B1 (fr) | 1971-07-06 | 1971-07-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7124728A FR2144581B1 (fr) | 1971-07-06 | 1971-07-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2144581A1 true FR2144581A1 (fr) | 1973-02-16 |
FR2144581B1 FR2144581B1 (fr) | 1976-03-19 |
Family
ID=9079917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7124728A Expired FR2144581B1 (fr) | 1971-07-06 | 1971-07-06 |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2144581B1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2393432A1 (fr) * | 1976-10-29 | 1978-12-29 | Westinghouse Electric Corp | Thyristor declenche par une tension qui diminue rapidement |
EP0301761A2 (fr) * | 1987-07-25 | 1989-02-01 | Plessey Semiconductors Limited | Thyristors |
WO1992017907A1 (fr) * | 1991-03-27 | 1992-10-15 | Siemens Aktiengesellschaft | Thyristor a tension d'amorçage ajustable et son procede de fabrication |
-
1971
- 1971-07-06 FR FR7124728A patent/FR2144581B1/fr not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2393432A1 (fr) * | 1976-10-29 | 1978-12-29 | Westinghouse Electric Corp | Thyristor declenche par une tension qui diminue rapidement |
EP0301761A2 (fr) * | 1987-07-25 | 1989-02-01 | Plessey Semiconductors Limited | Thyristors |
EP0301761A3 (fr) * | 1987-07-25 | 1991-02-27 | Plessey Semiconductors Limited | Thyristors |
WO1992017907A1 (fr) * | 1991-03-27 | 1992-10-15 | Siemens Aktiengesellschaft | Thyristor a tension d'amorçage ajustable et son procede de fabrication |
US5420045A (en) * | 1991-03-27 | 1995-05-30 | Siemens Aktiengesellschaft | Process for manufacturing thyristor with adjustable breakover voltage |
Also Published As
Publication number | Publication date |
---|---|
FR2144581B1 (fr) | 1976-03-19 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |