FR2112279A1 - - Google Patents

Info

Publication number
FR2112279A1
FR2112279A1 FR7133907A FR7133907A FR2112279A1 FR 2112279 A1 FR2112279 A1 FR 2112279A1 FR 7133907 A FR7133907 A FR 7133907A FR 7133907 A FR7133907 A FR 7133907A FR 2112279 A1 FR2112279 A1 FR 2112279A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7133907A
Other languages
French (fr)
Other versions
FR2112279B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Publication of FR2112279A1 publication Critical patent/FR2112279A1/fr
Application granted granted Critical
Publication of FR2112279B1 publication Critical patent/FR2112279B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Secondary Cells (AREA)
FR7133907A 1970-10-09 1971-09-21 Expired FR2112279B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049658A DE2049658C3 (en) 1970-10-09 1970-10-09 Electronic storage element

Publications (2)

Publication Number Publication Date
FR2112279A1 true FR2112279A1 (en) 1972-06-16
FR2112279B1 FR2112279B1 (en) 1974-05-10

Family

ID=5784649

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7133907A Expired FR2112279B1 (en) 1970-10-09 1971-09-21

Country Status (4)

Country Link
DE (1) DE2049658C3 (en)
FR (1) FR2112279B1 (en)
GB (1) GB1319388A (en)
IT (1) IT942603B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191366A1 (en) * 1972-06-26 1974-02-01 Ibm

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229326A (en) * 1992-06-23 1993-07-20 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
USRE40790E1 (en) * 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
AU6048896A (en) * 1995-06-07 1996-12-30 Micron Technology, Inc. A stack/trench diode for use with a multi-state material in a non-volatile memory cell
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) * 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2191366A1 (en) * 1972-06-26 1974-02-01 Ibm

Also Published As

Publication number Publication date
DE2049658C3 (en) 1975-08-28
DE2049658B2 (en) 1975-01-16
DE2049658A1 (en) 1972-04-13
GB1319388A (en) 1973-06-06
IT942603B (en) 1973-04-02
FR2112279B1 (en) 1974-05-10

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