FR2098403A1 - - Google Patents

Info

Publication number
FR2098403A1
FR2098403A1 FR7117987A FR7117987A FR2098403A1 FR 2098403 A1 FR2098403 A1 FR 2098403A1 FR 7117987 A FR7117987 A FR 7117987A FR 7117987 A FR7117987 A FR 7117987A FR 2098403 A1 FR2098403 A1 FR 2098403A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7117987A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2098403A1 publication Critical patent/FR2098403A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
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    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/491—Disposition
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01005—Boron [B]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR7117987A 1970-07-15 1971-05-18 Withdrawn FR2098403A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5490470A 1970-07-15 1970-07-15

Publications (1)

Publication Number Publication Date
FR2098403A1 true FR2098403A1 (fr) 1972-03-10

Family

ID=21994274

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7117987A Withdrawn FR2098403A1 (fr) 1970-07-15 1971-05-18

Country Status (5)

Country Link
US (1) US3626259A (fr)
JP (1) JPS516504B1 (fr)
DE (1) DE2128114A1 (fr)
FR (1) FR2098403A1 (fr)
IT (1) IT940431B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2493602A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Embase de boitier d'encapsulation de composants, a electrodes coplanaires et dispositif semiconducteur ainsi encapsule

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US3808474A (en) * 1970-10-29 1974-04-30 Texas Instruments Inc Semiconductor devices
US3753056A (en) * 1971-03-22 1973-08-14 Texas Instruments Inc Microwave semiconductor device
US3784883A (en) * 1971-07-19 1974-01-08 Communications Transistor Corp Transistor package
GB1327352A (en) * 1971-10-02 1973-08-22 Kyoto Ceramic Semiconductor device
DE2250918C2 (de) * 1971-10-27 1982-02-04 Westinghouse Electric Corp., 15222 Pittsburgh, Pa. Chipträger für Mikrowellen-Leistungstransistoren und Verfahren zu seiner Herstellung
US3740672A (en) * 1971-11-22 1973-06-19 Rca Corp Semiconductor carrier for microwave applications
US3764856A (en) * 1972-05-17 1973-10-09 Massachusetts Inst Technology Heat transfer in electronic equipment
US3784884A (en) * 1972-11-03 1974-01-08 Motorola Inc Low parasitic microwave package
US3936864A (en) * 1973-05-18 1976-02-03 Raytheon Company Microwave transistor package
US3943556A (en) * 1973-07-30 1976-03-09 Motorola, Inc. Method of making a high frequency semiconductor package
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns
US4023198A (en) * 1974-08-16 1977-05-10 Motorola, Inc. High frequency, high power semiconductor package
JPS5233453A (en) * 1975-09-10 1977-03-14 Nec Corp High frequency high output transistor amplifier
US4150393A (en) * 1975-09-29 1979-04-17 Motorola, Inc. High frequency semiconductor package
DE2812700A1 (de) * 1978-03-23 1979-12-06 Bbc Brown Boveri & Cie Halbleiteranordnung mit zwei halbleiterelementen
JPS5834755Y2 (ja) * 1978-09-18 1983-08-04 富士通株式会社 半導体装置
WO1980001437A1 (fr) * 1978-12-26 1980-07-10 Fujitsu Ltd Unite a semi-conducteur de haute frequence
US4417392A (en) * 1980-05-15 1983-11-29 Cts Corporation Process of making multi-layer ceramic package
DE3147790A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
JPH088321B2 (ja) * 1987-01-19 1996-01-29 住友電気工業株式会社 集積回路パツケ−ジ
KR100192871B1 (ko) * 1989-09-28 1999-06-15 기타지마 요시도시 리드프레임 및 그 제조방법
US5105260A (en) 1989-10-31 1992-04-14 Sgs-Thomson Microelectronics, Inc. Rf transistor package with nickel oxide barrier
EP0434264B1 (fr) * 1989-12-22 1994-10-12 Westinghouse Electric Corporation Boîtier pour des composants semi-conducteurs de puissance
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
US5331511A (en) * 1993-03-25 1994-07-19 Vlsi Technology, Inc. Electrically and thermally enhanced integrated-circuit package
JPH08139113A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5616886A (en) * 1995-06-05 1997-04-01 Motorola Wirebondless module package
US5898128A (en) * 1996-09-11 1999-04-27 Motorola, Inc. Electronic component
US7446411B2 (en) * 2005-10-24 2008-11-04 Freescale Semiconductor, Inc. Semiconductor structure and method of assembly
KR20090122965A (ko) * 2007-02-23 2009-12-01 스카이워크스 솔루션즈, 인코포레이티드 저손실, 저고조파 및 향상된 선형성 성능을 가진 고주파 스위치

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US3489956A (en) * 1966-09-30 1970-01-13 Nippon Electric Co Semiconductor device container
US3549784A (en) * 1968-02-01 1970-12-22 American Lava Corp Ceramic-metallic composite substrate
US3566212A (en) * 1969-02-24 1971-02-23 Trw Semiconductors Inc High temperature semiconductor package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2493602A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Embase de boitier d'encapsulation de composants, a electrodes coplanaires et dispositif semiconducteur ainsi encapsule

Also Published As

Publication number Publication date
IT940431B (it) 1973-02-10
DE2128114A1 (de) 1972-01-20
US3626259A (en) 1971-12-07
JPS516504B1 (fr) 1976-02-28

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