FR2085798B1 - - Google Patents

Info

Publication number
FR2085798B1
FR2085798B1 FR7111526A FR7111526A FR2085798B1 FR 2085798 B1 FR2085798 B1 FR 2085798B1 FR 7111526 A FR7111526 A FR 7111526A FR 7111526 A FR7111526 A FR 7111526A FR 2085798 B1 FR2085798 B1 FR 2085798B1
Authority
FR
France
Prior art keywords
electrical resistance
resistance state
memory device
high electrical
low electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7111526A
Other languages
English (en)
Other versions
FR2085798A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2085798A1 publication Critical patent/FR2085798A1/fr
Application granted granted Critical
Publication of FR2085798B1 publication Critical patent/FR2085798B1/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
FR7111526A 1970-04-02 1971-04-01 Expired FR2085798B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45028410A JPS5012598B1 (fr) 1970-04-02 1970-04-02

Publications (2)

Publication Number Publication Date
FR2085798A1 FR2085798A1 (fr) 1971-12-31
FR2085798B1 true FR2085798B1 (fr) 1976-09-03

Family

ID=12247872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7111526A Expired FR2085798B1 (fr) 1970-04-02 1971-04-01

Country Status (7)

Country Link
US (1) US3719933A (fr)
JP (1) JPS5012598B1 (fr)
CA (1) CA928854A (fr)
DE (1) DE2114648C3 (fr)
FR (1) FR2085798B1 (fr)
GB (1) GB1352789A (fr)
NL (1) NL151827B (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922648A (en) * 1974-08-19 1975-11-25 Energy Conversion Devices Inc Method and means for preventing degradation of threshold voltage of filament-forming memory semiconductor device
US4396998A (en) * 1980-08-27 1983-08-02 Mobay Chemical Corporation Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
US4642664A (en) * 1983-04-21 1987-02-10 Celanese Corporation Electrical device made of partially pryolyzed polymer
EP0335630B1 (fr) * 1988-03-28 1994-02-23 Canon Kabushiki Kaisha Commutateur et procédé pour sa fabrication
EP1344223A4 (fr) * 2000-10-31 2005-05-25 Univ California Dispositif organique bistable et cellules memoire organiques
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
CN1276518C (zh) 2001-05-07 2006-09-20 先进微装置公司 使用复合分子材料的浮置栅极存储装置
WO2002091494A1 (fr) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Element de commutation ayant un effet memoire
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
DE60220912T2 (de) * 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
DE60130586T2 (de) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale Speicherzelle
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
JP4808966B2 (ja) * 2002-09-19 2011-11-02 シャープ株式会社 抵抗変化機能体並びにそれを備えたメモリおよび電子機器
DE10245554B4 (de) * 2002-09-30 2008-04-10 Qimonda Ag Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen
TW577194B (en) * 2002-11-08 2004-02-21 Endpoints Technology Corp Digital adjustable chip oscillator
WO2004070789A2 (fr) * 2003-02-03 2004-08-19 The Regent Of The University Of California Dispositifs bistables electriques organiques a nanosurface inscriptible plusieurs fois
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
US7544966B2 (en) * 2003-12-03 2009-06-09 The Regents Of The University Of California Three-terminal electrical bistable devices
WO2006001923A2 (fr) * 2004-05-17 2006-01-05 The Regents Of The University Of California Composite bistable nanoparticules-polymere utilise dans des dispositifs de memoire
US7554111B2 (en) * 2004-05-20 2009-06-30 The Regents Of The University Of California Nanoparticle-polymer bistable devices
US7443710B2 (en) * 2004-09-28 2008-10-28 Spansion, Llc Control of memory devices possessing variable resistance characteristics
CA2587051A1 (fr) * 2004-10-28 2006-05-11 The Regents Of The University Of California Film mince organique-complexe pour applications de memoire remanente
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
JP4974576B2 (ja) * 2005-04-27 2012-07-11 株式会社半導体エネルギー研究所 記憶素子、半導体装置、及び記憶素子の作製方法
EP1883970B1 (fr) 2005-04-27 2012-10-10 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur et son procede de fabrication
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
KR101102157B1 (ko) * 2005-09-16 2012-01-02 삼성전자주식회사 금속 나노 입자를 이용한 휘발성 음저항 소자
JP2010028105A (ja) * 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3486156A (en) * 1965-08-02 1969-12-23 Ltv Aerospace Corp Electrical connection device
JPS4814351B1 (fr) * 1968-12-02 1973-05-07
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics

Also Published As

Publication number Publication date
JPS5012598B1 (fr) 1975-05-13
NL151827B (nl) 1976-12-15
GB1352789A (en) 1974-05-08
DE2114648B2 (de) 1973-05-10
NL7104467A (fr) 1971-10-05
CA928854A (en) 1973-06-19
FR2085798A1 (fr) 1971-12-31
US3719933A (en) 1973-03-06
DE2114648A1 (de) 1971-12-16
DE2114648C3 (de) 1973-12-06

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Legal Events

Date Code Title Description
ST Notification of lapse