FR2012713A1 - - Google Patents
Info
- Publication number
- FR2012713A1 FR2012713A1 FR6920441A FR6920441A FR2012713A1 FR 2012713 A1 FR2012713 A1 FR 2012713A1 FR 6920441 A FR6920441 A FR 6920441A FR 6920441 A FR6920441 A FR 6920441A FR 2012713 A1 FR2012713 A1 FR 2012713A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74411168A | 1968-07-11 | 1968-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2012713A1 true FR2012713A1 (fr) | 1970-03-20 |
Family
ID=24991477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6920441A Withdrawn FR2012713A1 (fr) | 1968-07-11 | 1969-06-19 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3537078A (fr) |
JP (1) | JPS5515800B1 (fr) |
DE (1) | DE1928932A1 (fr) |
FR (1) | FR2012713A1 (fr) |
GB (1) | GB1212955A (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2129166B2 (de) * | 1970-06-12 | 1974-03-28 | Hitachi Ltd., Tokio | Halbleiterspeicher |
US3631309A (en) * | 1970-07-23 | 1971-12-28 | Semiconductor Elect Memories | Integrated circuit bipolar memory cell |
US3729721A (en) * | 1970-09-23 | 1973-04-24 | Siemens Ag | Circuit arrangement for reading and writing in a bipolar semiconductor memory |
US3736573A (en) * | 1971-11-11 | 1973-05-29 | Ibm | Resistor sensing bit switch |
US3849675A (en) * | 1973-01-05 | 1974-11-19 | Bell Telephone Labor Inc | Low power flip-flop circuits |
US3909807A (en) * | 1974-09-03 | 1975-09-30 | Bell Telephone Labor Inc | Integrated circuit memory cell |
DE2739283A1 (de) * | 1977-08-31 | 1979-03-15 | Siemens Ag | Integrierbare halbleiterspeicherzelle |
JPS546364Y1 (fr) * | 1977-09-01 | 1979-03-24 | ||
FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
DE19902889C2 (de) * | 1999-01-18 | 2002-02-07 | Flemming G & Pehrsson H | Kennzeichnungsvorrichtung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2795695A (en) * | 1953-02-09 | 1957-06-11 | Vitro Corp Of America | Information processing apparatus |
US3182210A (en) * | 1963-04-26 | 1965-05-04 | Melpar Inc | Bridge multivibrator having transistors of the same conductivity type |
US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
US3437840A (en) * | 1965-09-09 | 1969-04-08 | Motorola Inc | Gated storage elements for a semiconductor memory |
US3389383A (en) * | 1967-05-31 | 1968-06-18 | Gen Electric | Integrated circuit bistable memory cell |
-
1968
- 1968-07-11 US US744111A patent/US3537078A/en not_active Expired - Lifetime
-
1969
- 1969-06-07 DE DE19691928932 patent/DE1928932A1/de active Pending
- 1969-06-12 JP JP4582169A patent/JPS5515800B1/ja active Pending
- 1969-06-19 FR FR6920441A patent/FR2012713A1/fr not_active Withdrawn
- 1969-06-23 GB GB31560/69A patent/GB1212955A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3537078A (en) | 1970-10-27 |
DE1928932A1 (de) | 1969-12-18 |
GB1212955A (en) | 1970-11-18 |
JPS5515800B1 (fr) | 1980-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |