FR2002319A1 - - Google Patents

Info

Publication number
FR2002319A1
FR2002319A1 FR6904248A FR6904248A FR2002319A1 FR 2002319 A1 FR2002319 A1 FR 2002319A1 FR 6904248 A FR6904248 A FR 6904248A FR 6904248 A FR6904248 A FR 6904248A FR 2002319 A1 FR2002319 A1 FR 2002319A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR6904248A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Publication of FR2002319A1 publication Critical patent/FR2002319A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
FR6904248A 1968-02-21 1969-02-20 Pending FR2002319A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70724568A 1968-02-21 1968-02-21

Publications (1)

Publication Number Publication Date
FR2002319A1 true FR2002319A1 (fr) 1969-10-17

Family

ID=24840936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6904248A Pending FR2002319A1 (fr) 1968-02-21 1969-02-20

Country Status (6)

Country Link
US (1) US3945935A (fr)
JP (1) JPS4617832B1 (fr)
CA (1) CA922085A (fr)
DE (1) DE1907540C3 (fr)
FR (1) FR2002319A1 (fr)
GB (1) GB1224433A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330630A (en) * 1991-01-02 1994-07-19 Energy Conversion Devices, Inc. Switch with improved threshold voltage
US5544615A (en) * 1994-07-29 1996-08-13 The United States Of America As Represented By The Secretary Of The Air Force Synthesis and growth processes for zinc germanium diphosphide single crystals
AT402227B (de) * 1995-05-17 1997-03-25 Chemetall Gmbh Festschmierstoff, insbesondere für reibbeläge, reibbelagmischungen und reibbeläge
US9368670B2 (en) * 2014-04-21 2016-06-14 University Of Oregon GaAs thin films and methods of making and using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2882192A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom

Also Published As

Publication number Publication date
GB1224433A (en) 1971-03-10
DE1907540B2 (de) 1975-04-17
JPS4617832B1 (fr) 1971-05-18
CA922085A (en) 1973-03-06
DE1907540C3 (de) 1975-11-20
US3945935A (en) 1976-03-23
DE1907540A1 (de) 1969-09-18

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