FR2000029A1 - Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication - Google Patents
Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabricationInfo
- Publication number
- FR2000029A1 FR2000029A1 FR6900047A FR6900047A FR2000029A1 FR 2000029 A1 FR2000029 A1 FR 2000029A1 FR 6900047 A FR6900047 A FR 6900047A FR 6900047 A FR6900047 A FR 6900047A FR 2000029 A1 FR2000029 A1 FR 2000029A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- semiconductor devices
- ohmic contacts
- ohmic
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69564368A | 1968-01-04 | 1968-01-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2000029A1 true FR2000029A1 (fr) | 1969-08-29 |
FR2000029B3 FR2000029B3 (fr) | 1975-11-21 |
Family
ID=24793872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6900047A Granted FR2000029A1 (fr) | 1968-01-04 | 1969-01-03 | Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication |
Country Status (2)
Country | Link |
---|---|
US (1) | US3551196A (fr) |
FR (1) | FR2000029A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2058931A1 (de) * | 1970-12-01 | 1972-06-08 | Licentia Gmbh | Verfahren zum Kontaktieren von Halbleiterzonen Auswertung |
US3808069A (en) * | 1972-03-15 | 1974-04-30 | Bell Telephone Labor Inc | Forming windows in composite dielectric layers |
NL163370C (nl) * | 1972-04-28 | 1980-08-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon. |
US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
NL8600021A (nl) * | 1986-01-08 | 1987-08-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht. |
US6291283B1 (en) * | 1998-11-09 | 2001-09-18 | Texas Instruments Incorporated | Method to form silicates as high dielectric constant materials |
-
1968
- 1968-01-04 US US695643A patent/US3551196A/en not_active Expired - Lifetime
-
1969
- 1969-01-03 FR FR6900047A patent/FR2000029A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
US3551196A (en) | 1970-12-29 |
FR2000029B3 (fr) | 1975-11-21 |
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