FR1603847A - - Google Patents

Info

Publication number
FR1603847A
FR1603847A FR1603847DA FR1603847A FR 1603847 A FR1603847 A FR 1603847A FR 1603847D A FR1603847D A FR 1603847DA FR 1603847 A FR1603847 A FR 1603847A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1603847A publication Critical patent/FR1603847A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
FR1603847D 1968-01-15 1968-12-13 Expired FR1603847A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69791168A 1968-01-15 1968-01-15

Publications (1)

Publication Number Publication Date
FR1603847A true FR1603847A (fr) 1971-06-07

Family

ID=24803096

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1603847D Expired FR1603847A (fr) 1968-01-15 1968-12-13

Country Status (5)

Country Link
US (1) US3558374A (fr)
JP (2) JPS4822376B1 (fr)
DE (1) DE1901819C3 (fr)
FR (1) FR1603847A (fr)
GB (1) GB1253294A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894893A (en) * 1968-03-30 1975-07-15 Kyodo Denshi Gijyutsu Kk Method for the production of monocrystal-polycrystal semiconductor devices
JPS503780A (fr) * 1973-05-15 1975-01-16
US3874920A (en) * 1973-06-28 1975-04-01 Ibm Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS51126587U (fr) * 1975-04-09 1976-10-13
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
US4157418A (en) * 1978-02-08 1979-06-05 Minnesota Mining And Manufacturing Company Acrylic functional aminocarboxylic acids and derivatives as components of pressure sensitive adhesives
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
DE3725358A1 (de) * 1987-07-30 1989-02-09 Telog Systems Gmbh Vorrichtung und verfahren zur oberflaechenbehandlung von materialien
US5164338A (en) * 1988-04-28 1992-11-17 U.S. Philips Corporation Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer
US4975469A (en) * 1989-03-20 1990-12-04 Amoco Corporation Oriented porous polypropylene films
US5176953A (en) * 1990-12-21 1993-01-05 Amoco Corporation Oriented polymeric microporous films
US6690103B1 (en) 1999-07-21 2004-02-10 Alan K. Uke Incandescent light bulb with variable pitch coiled filament

Also Published As

Publication number Publication date
GB1253294A (en) 1971-11-10
JPS5322422B1 (fr) 1978-07-08
US3558374A (en) 1971-01-26
JPS4822376B1 (fr) 1973-07-05
DE1901819C3 (de) 1980-07-24
DE1901819B2 (de) 1979-11-08
DE1901819A1 (de) 1969-09-11

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Legal Events

Date Code Title Description
ST Notification of lapse