FR1578386A - - Google Patents
Info
- Publication number
- FR1578386A FR1578386A FR1578386DA FR1578386A FR 1578386 A FR1578386 A FR 1578386A FR 1578386D A FR1578386D A FR 1578386DA FR 1578386 A FR1578386 A FR 1578386A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Control Of Direct Current Motors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB36514/67A GB1194427A (en) | 1967-08-09 | 1967-08-09 | Improvements in Semiconductor Integrated Circuits |
GB36515/67A GB1193465A (en) | 1967-08-09 | 1967-08-09 | Improvements in Semiconductor Integrated Circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1578386A true FR1578386A (fr) | 1969-08-14 |
Family
ID=26263142
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1578386D Expired FR1578386A (fr) | 1967-08-09 | 1968-08-09 | |
FR1584128D Expired FR1584128A (fr) | 1967-08-09 | 1968-08-09 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1584128D Expired FR1584128A (fr) | 1967-08-09 | 1968-08-09 |
Country Status (7)
Country | Link |
---|---|
US (2) | US3586928A (fr) |
BE (2) | BE719238A (fr) |
CH (2) | CH489915A (fr) |
DE (1) | DE1764794A1 (fr) |
FR (2) | FR1578386A (fr) |
GB (2) | GB1193465A (fr) |
NL (2) | NL6811176A (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021346B1 (fr) * | 1970-08-14 | 1975-07-22 | ||
JPS4974486A (fr) * | 1972-11-17 | 1974-07-18 | ||
US3959812A (en) * | 1973-02-26 | 1976-05-25 | Hitachi, Ltd. | High-voltage semiconductor integrated circuit |
US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
JPS54112157A (en) * | 1978-02-23 | 1979-09-01 | Hitachi Ltd | Control circuit for field effect thyristor |
DE3240564A1 (de) * | 1982-11-03 | 1984-05-03 | Licentia Patent-Verwaltungs-Gmbh | Steuerbares halbleiterschaltelement |
US4779126A (en) * | 1983-11-25 | 1988-10-18 | International Rectifier Corporation | Optically triggered lateral thyristor with auxiliary region |
FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
JPS63182861A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | ゼロクロス型サイリスタ |
DE10111462A1 (de) * | 2001-03-09 | 2002-09-19 | Infineon Technologies Ag | Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur |
CN108878522A (zh) * | 2018-07-03 | 2018-11-23 | 西安卫光科技有限公司 | 一种高触发电压可控硅 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
US3299307A (en) * | 1963-01-14 | 1967-01-17 | Inoue Kiyoshi | Electroluminescent multilayer stack with in situ formation of active layer and method of making same |
US3419765A (en) * | 1965-10-01 | 1968-12-31 | Texas Instruments Inc | Ohmic contact to semiconductor devices |
US3423650A (en) * | 1966-07-01 | 1969-01-21 | Rca Corp | Monolithic semiconductor microcircuits with improved means for connecting points of common potential |
-
1967
- 1967-08-09 GB GB36515/67A patent/GB1193465A/en not_active Expired
- 1967-08-09 GB GB36514/67A patent/GB1194427A/en not_active Expired
-
1968
- 1968-07-25 US US754134*A patent/US3586928A/en not_active Expired - Lifetime
- 1968-07-25 US US747654A patent/US3508127A/en not_active Expired - Lifetime
- 1968-08-06 NL NL6811176A patent/NL6811176A/xx unknown
- 1968-08-07 DE DE19681764794 patent/DE1764794A1/de active Pending
- 1968-08-07 CH CH1184068A patent/CH489915A/de not_active IP Right Cessation
- 1968-08-07 CH CH1183968A patent/CH491501A/de not_active IP Right Cessation
- 1968-08-08 NL NL6811253A patent/NL6811253A/xx unknown
- 1968-08-08 BE BE719238D patent/BE719238A/xx unknown
- 1968-08-09 FR FR1578386D patent/FR1578386A/fr not_active Expired
- 1968-08-09 FR FR1584128D patent/FR1584128A/fr not_active Expired
- 1968-08-09 BE BE719310D patent/BE719310A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1584128A (fr) | 1969-12-12 |
US3508127A (en) | 1970-04-21 |
NL6811176A (fr) | 1969-02-11 |
US3586928A (en) | 1971-06-22 |
CH489915A (de) | 1970-04-30 |
CH491501A (de) | 1970-05-31 |
GB1194427A (en) | 1970-06-10 |
DE1764794A1 (de) | 1971-11-11 |
GB1193465A (en) | 1970-06-03 |
BE719310A (fr) | 1969-02-10 |
BE719238A (fr) | 1969-02-10 |
NL6811253A (fr) | 1969-02-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |