FR1548859A - - Google Patents

Info

Publication number
FR1548859A
FR1548859A FR1548859DA FR1548859A FR 1548859 A FR1548859 A FR 1548859A FR 1548859D A FR1548859D A FR 1548859DA FR 1548859 A FR1548859 A FR 1548859A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1548859A publication Critical patent/FR1548859A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/012Modifications of generator to improve response time or to decrease power consumption
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
FR1548859D 1967-01-16 1967-12-07 Expired FR1548859A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60943567A 1967-01-16 1967-01-16

Publications (1)

Publication Number Publication Date
FR1548859A true FR1548859A (fr) 1968-12-06

Family

ID=24440790

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1548859D Expired FR1548859A (fr) 1967-01-16 1967-12-07

Country Status (2)

Country Link
US (1) US3493788A (fr)
FR (1) FR1548859A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2059996A1 (fr) * 1969-03-11 1971-06-11 Ibm

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30744E (en) * 1967-08-22 1981-09-15 Bunker Ramo Corporation Digital memory apparatus
US3764833A (en) * 1970-09-22 1973-10-09 Ibm Monolithic memory system with bi-level powering for reduced power consumption

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL195355A (fr) * 1954-06-29
US2840728A (en) * 1955-04-26 1958-06-24 Bell Telephone Labor Inc Non-saturating transistor circuits
US2954484A (en) * 1956-02-13 1960-09-27 Gen Precision Inc Direct coupled transistor flip-flop
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2059996A1 (fr) * 1969-03-11 1971-06-11 Ibm

Also Published As

Publication number Publication date
US3493788A (en) 1970-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse