FR1523033A - Transistor latéral et son procédé de fabrication - Google Patents
Transistor latéral et son procédé de fabricationInfo
- Publication number
- FR1523033A FR1523033A FR106719A FR106719A FR1523033A FR 1523033 A FR1523033 A FR 1523033A FR 106719 A FR106719 A FR 106719A FR 106719 A FR106719 A FR 106719A FR 1523033 A FR1523033 A FR 1523033A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- lateral transistor
- transistor
- lateral
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/096—Lateral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55069766A | 1966-05-17 | 1966-05-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1523033A true FR1523033A (fr) | 1968-04-02 |
Family
ID=24198244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR106719A Expired FR1523033A (fr) | 1966-05-17 | 1967-05-17 | Transistor latéral et son procédé de fabrication |
Country Status (3)
Country | Link |
---|---|
US (1) | US3443174A (fr) |
FR (1) | FR1523033A (fr) |
GB (1) | GB1177694A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0110773A2 (fr) * | 1982-11-22 | 1984-06-13 | Fairchild Semiconductor Corporation | Commande de l'injection dans le substrat pour des transistors bipolaires latéraux |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3652347A (en) * | 1967-11-06 | 1972-03-28 | Hitachi Ltd | Method for manufacturing a semiconductor device |
US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1050478A (fr) * | 1962-10-08 | |||
US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
-
1966
- 1966-05-17 US US550697A patent/US3443174A/en not_active Expired - Lifetime
-
1967
- 1967-05-16 GB GB22661/67A patent/GB1177694A/en not_active Expired
- 1967-05-17 FR FR106719A patent/FR1523033A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0110773A2 (fr) * | 1982-11-22 | 1984-06-13 | Fairchild Semiconductor Corporation | Commande de l'injection dans le substrat pour des transistors bipolaires latéraux |
EP0110773A3 (en) * | 1982-11-22 | 1985-09-18 | Fairchild Camera & Instrument Corporation | Control of substrate injection in lateral bipolar transistors |
Also Published As
Publication number | Publication date |
---|---|
GB1177694A (en) | 1970-01-14 |
US3443174A (en) | 1969-05-06 |
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