FR1378131A - Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriqués - Google Patents
Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriquésInfo
- Publication number
- FR1378131A FR1378131A FR947228A FR947228A FR1378131A FR 1378131 A FR1378131 A FR 1378131A FR 947228 A FR947228 A FR 947228A FR 947228 A FR947228 A FR 947228A FR 1378131 A FR1378131 A FR 1378131A
- Authority
- FR
- France
- Prior art keywords
- fabricated
- devices
- semiconductor layer
- pattern formation
- epitaxial semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007261 regionalization Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR947228A FR1378131A (fr) | 1962-10-05 | 1963-09-11 | Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriqués |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22857662A | 1962-10-05 | 1962-10-05 | |
FR947228A FR1378131A (fr) | 1962-10-05 | 1963-09-11 | Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriqués |
US374027A US3260902A (en) | 1962-10-05 | 1964-06-10 | Monocrystal transistors with region for isolating unit |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1378131A true FR1378131A (fr) | 1964-11-13 |
Family
ID=27247457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR947228A Expired FR1378131A (fr) | 1962-10-05 | 1963-09-11 | Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriqués |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1378131A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1297763B (de) * | 1964-07-18 | 1969-06-19 | Fujitsu Ltd | Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen |
FR2042556A1 (fr) * | 1969-05-12 | 1971-02-12 | Eastman Kodak Co |
-
1963
- 1963-09-11 FR FR947228A patent/FR1378131A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1297763B (de) * | 1964-07-18 | 1969-06-19 | Fujitsu Ltd | Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen |
FR2042556A1 (fr) * | 1969-05-12 | 1971-02-12 | Eastman Kodak Co |
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