FR1371868A - Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide support - Google Patents
Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide supportInfo
- Publication number
- FR1371868A FR1371868A FR941389A FR941389A FR1371868A FR 1371868 A FR1371868 A FR 1371868A FR 941389 A FR941389 A FR 941389A FR 941389 A FR941389 A FR 941389A FR 1371868 A FR1371868 A FR 1371868A
- Authority
- FR
- France
- Prior art keywords
- arsenide
- galliumen
- deposition
- production
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR941389A FR1371868A (en) | 1963-07-13 | 1963-07-13 | Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide support |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR941389A FR1371868A (en) | 1963-07-13 | 1963-07-13 | Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide support |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1371868A true FR1371868A (en) | 1964-09-11 |
Family
ID=8808264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR941389A Expired FR1371868A (en) | 1963-07-13 | 1963-07-13 | Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide support |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1371868A (en) |
-
1963
- 1963-07-13 FR FR941389A patent/FR1371868A/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES348181A1 (en) | Method of manufacturing filamentary bodies of circular cross-section consisting of silicon carbide single crystals and filamentary bodies obtained by said method | |
MY6900268A (en) | Process for epitaxial crystal growth | |
BE581532A (en) | Sealing device for bolts. | |
FR1371868A (en) | Production and deposition of epitaxial films, for example of single crystal galliumen arsenide on a gallium arsenide support | |
FR1372252A (en) | Gallium arsenide semiconductor diode and method for its manufacture | |
FR1319183A (en) | Growth of epitaxial films | |
FR1295071A (en) | Process for electrolytically depositing thin films on supports | |
BE575162A (en) | Device for mounting floral decorative sets | |
FR1141242A (en) | Sealing device for disconnections | |
FR1363003A (en) | Improvements to the production of epitaxial films, e.g. gallium arsenide | |
BE618986A (en) | Device for the gas phase deposition of a semiconductor product on support bars having the same structural network | |
ES372163A1 (en) | Silicon nitride whiskers | |
AU1494962A (en) | Production of single crystal compounds epitaxial films of said compounds, and semiconductor devices utilizing said compounds | |
FR1345226A (en) | Method for producing epitaxial layers on semiconductor single crystals | |
FR1372290A (en) | Device and method for epitaxial deposition | |
AU401281B2 (en) | Process for preparing catalytic systems comprising chromium compounds on carriers containing silicon compounds and catalytic systems obtained therewith | |
BE583643A (en) | Binders for archive collections. | |
FR1302349A (en) | Device for the production of acetylene by incomplete combustion of hydrocarbons | |
AU2922063A (en) | Process for growing gallium phosphide and gallium arsenide crystals | |
FR93695E (en) | A method of epitaxial deposition in liquid phase of gallium arsenide. | |
FR1299560A (en) | Reducing device for narrow intervals of a range of pressures | |
FR1393112A (en) | Process for the production of alpha-olefins by oligomerization | |
CA767608A (en) | Process for growing gallium phosphide and gallium arsenide crystals | |
FR1380350A (en) | Epitaxial semiconductor device | |
CA664858A (en) | Dispositif d'auto-debrayage d'un volant a main place sur un arbre telecommande par servo-moteur |