FR1294425A - Method of doping crystalline materials, for example metals or semiconductor bodies - Google Patents

Method of doping crystalline materials, for example metals or semiconductor bodies

Info

Publication number
FR1294425A
FR1294425A FR865923A FR865923A FR1294425A FR 1294425 A FR1294425 A FR 1294425A FR 865923 A FR865923 A FR 865923A FR 865923 A FR865923 A FR 865923A FR 1294425 A FR1294425 A FR 1294425A
Authority
FR
France
Prior art keywords
crystalline materials
semiconductor bodies
example metals
doping crystalline
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR865923A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wacker Chemie AG
Original Assignee
Wacker Chemie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DEW28070A priority Critical patent/DE1190918B/en
Application filed by Wacker Chemie AG filed Critical Wacker Chemie AG
Priority to FR865923A priority patent/FR1294425A/en
Application granted granted Critical
Publication of FR1294425A publication Critical patent/FR1294425A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR865923A 1960-06-24 1961-06-23 Method of doping crystalline materials, for example metals or semiconductor bodies Expired FR1294425A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DEW28070A DE1190918B (en) 1960-06-24 1960-06-24 Process for the targeted doping of rod-shaped bodies during zone melting
FR865923A FR1294425A (en) 1961-06-23 1961-06-23 Method of doping crystalline materials, for example metals or semiconductor bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR865923A FR1294425A (en) 1961-06-23 1961-06-23 Method of doping crystalline materials, for example metals or semiconductor bodies

Publications (1)

Publication Number Publication Date
FR1294425A true FR1294425A (en) 1962-05-26

Family

ID=8757921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR865923A Expired FR1294425A (en) 1960-06-24 1961-06-23 Method of doping crystalline materials, for example metals or semiconductor bodies

Country Status (1)

Country Link
FR (1) FR1294425A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140239A2 (en) * 1983-10-19 1985-05-08 International Business Machines Corporation Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique
US4696716A (en) * 1985-05-20 1987-09-29 Siemens Aktiengesellschaft Apparatus for doping semiconductor rods with solid dopants
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0140239A2 (en) * 1983-10-19 1985-05-08 International Business Machines Corporation Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique
EP0140239A3 (en) * 1983-10-19 1985-06-12 International Business Machines Corporation Apparatus and method for growing doped monocrystalline semiconductor crystals using the float zone technique
US4696716A (en) * 1985-05-20 1987-09-29 Siemens Aktiengesellschaft Apparatus for doping semiconductor rods with solid dopants
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
US8961685B2 (en) 2010-12-28 2015-02-24 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer

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