FR1294425A - Method of doping crystalline materials, for example metals or semiconductor bodies - Google Patents
Method of doping crystalline materials, for example metals or semiconductor bodiesInfo
- Publication number
- FR1294425A FR1294425A FR865923A FR865923A FR1294425A FR 1294425 A FR1294425 A FR 1294425A FR 865923 A FR865923 A FR 865923A FR 865923 A FR865923 A FR 865923A FR 1294425 A FR1294425 A FR 1294425A
- Authority
- FR
- France
- Prior art keywords
- crystalline materials
- semiconductor bodies
- example metals
- doping crystalline
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEW28070A DE1190918B (en) | 1960-06-24 | 1960-06-24 | Process for the targeted doping of rod-shaped bodies during zone melting |
FR865923A FR1294425A (en) | 1961-06-23 | 1961-06-23 | Method of doping crystalline materials, for example metals or semiconductor bodies |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR865923A FR1294425A (en) | 1961-06-23 | 1961-06-23 | Method of doping crystalline materials, for example metals or semiconductor bodies |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1294425A true FR1294425A (en) | 1962-05-26 |
Family
ID=8757921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR865923A Expired FR1294425A (en) | 1960-06-24 | 1961-06-23 | Method of doping crystalline materials, for example metals or semiconductor bodies |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1294425A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0140239A2 (en) * | 1983-10-19 | 1985-05-08 | International Business Machines Corporation | Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique |
US4696716A (en) * | 1985-05-20 | 1987-09-29 | Siemens Aktiengesellschaft | Apparatus for doping semiconductor rods with solid dopants |
WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
-
1961
- 1961-06-23 FR FR865923A patent/FR1294425A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0140239A2 (en) * | 1983-10-19 | 1985-05-08 | International Business Machines Corporation | Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique |
EP0140239A3 (en) * | 1983-10-19 | 1985-06-12 | International Business Machines Corporation | Apparatus and method for growing doped monocrystalline semiconductor crystals using the float zone technique |
US4696716A (en) * | 1985-05-20 | 1987-09-29 | Siemens Aktiengesellschaft | Apparatus for doping semiconductor rods with solid dopants |
WO2012089392A1 (en) * | 2010-12-28 | 2012-07-05 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
US8961685B2 (en) | 2010-12-28 | 2015-02-24 | Siltronic Ag | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
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