FR1288168A - Perfectionnements aux transistors à charges d'espace mitoyennes - Google Patents
Perfectionnements aux transistors à charges d'espace mitoyennesInfo
- Publication number
- FR1288168A FR1288168A FR852075A FR852075A FR1288168A FR 1288168 A FR1288168 A FR 1288168A FR 852075 A FR852075 A FR 852075A FR 852075 A FR852075 A FR 852075A FR 1288168 A FR1288168 A FR 1288168A
- Authority
- FR
- France
- Prior art keywords
- transistors
- joint space
- space charges
- charges
- joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR852075A FR1288168A (fr) | 1961-02-08 | 1961-02-08 | Perfectionnements aux transistors à charges d'espace mitoyennes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR852075A FR1288168A (fr) | 1961-02-08 | 1961-02-08 | Perfectionnements aux transistors à charges d'espace mitoyennes |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1288168A true FR1288168A (fr) | 1962-03-24 |
Family
ID=8748401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR852075A Expired FR1288168A (fr) | 1961-02-08 | 1961-02-08 | Perfectionnements aux transistors à charges d'espace mitoyennes |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1288168A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295094B (de) * | 1962-08-23 | 1969-05-14 | Motorola Inc | Halbleiterbauelement |
FR2119942A1 (fr) * | 1970-11-30 | 1972-08-11 | Matsushita Electric Ind Co Ltd |
-
1961
- 1961-02-08 FR FR852075A patent/FR1288168A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295094B (de) * | 1962-08-23 | 1969-05-14 | Motorola Inc | Halbleiterbauelement |
FR2119942A1 (fr) * | 1970-11-30 | 1972-08-11 | Matsushita Electric Ind Co Ltd |
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