FR1267056A - Photo-transistron - Google Patents
Photo-transistronInfo
- Publication number
- FR1267056A FR1267056A FR838254A FR838254A FR1267056A FR 1267056 A FR1267056 A FR 1267056A FR 838254 A FR838254 A FR 838254A FR 838254 A FR838254 A FR 838254A FR 1267056 A FR1267056 A FR 1267056A
- Authority
- FR
- France
- Prior art keywords
- transistron
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL243273 | 1959-09-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1267056A true FR1267056A (fr) | 1961-07-17 |
Family
ID=19751912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR838254A Expired FR1267056A (fr) | 1959-09-11 | 1960-09-09 | Photo-transistron |
Country Status (5)
Country | Link |
---|---|
US (1) | US3210622A (fr) |
JP (1) | JPS3621289B1 (fr) |
DE (1) | DE1144416B (fr) |
FR (1) | FR1267056A (fr) |
GB (1) | GB957950A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3296502A (en) * | 1962-11-28 | 1967-01-03 | Gen Instrument Corp | Variable photosensitive semiconductor device having a graduatingly different operable surface area |
US3283207A (en) * | 1963-05-27 | 1966-11-01 | Ibm | Light-emitting transistor system |
US3535532A (en) * | 1964-06-29 | 1970-10-20 | Texas Instruments Inc | Integrated circuit including light source,photodiode and associated components |
US3435236A (en) * | 1967-03-21 | 1969-03-25 | Us Air Force | High ohmic semiconductor tuned narrow bandpass barrier photodiode |
CH567803A5 (fr) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
US5150182A (en) * | 1988-06-07 | 1992-09-22 | The Boeing Company | Semiconductor device enhanced for optical interaction |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2402662A (en) * | 1941-05-27 | 1946-06-25 | Bell Telephone Labor Inc | Light-sensitive electric device |
BE489417A (fr) * | 1949-04-06 | |||
US2629802A (en) * | 1951-12-07 | 1953-02-24 | Rca Corp | Photocell amplifier construction |
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
US2669635A (en) * | 1952-11-13 | 1954-02-16 | Bell Telephone Labor Inc | Semiconductive photoelectric transducer |
US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
NL207969A (fr) * | 1955-06-28 | |||
NL235086A (fr) * | 1958-02-22 | 1900-01-01 |
-
1960
- 1960-09-06 US US54237A patent/US3210622A/en not_active Expired - Lifetime
- 1960-09-07 DE DEN18873A patent/DE1144416B/de active Pending
- 1960-09-08 GB GB30983/60A patent/GB957950A/en not_active Expired
- 1960-09-09 JP JP3750060A patent/JPS3621289B1/ja active Pending
- 1960-09-09 FR FR838254A patent/FR1267056A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3210622A (en) | 1965-10-05 |
DE1144416B (de) | 1963-02-28 |
JPS3621289B1 (fr) | 1961-11-06 |
GB957950A (en) | 1964-05-13 |
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